• 제목/요약/키워드: current collector

검색결과 255건 처리시간 0.028초

Thin Film Energy Storage Device with Spray-Coated Sliver Paste Current Collector

  • Yoon, Seong Man;Jang, Yunseok;Jo, Jeongdai;Go, Jeung Sang
    • ETRI Journal
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    • 제39권6호
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    • pp.874-879
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    • 2017
  • This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass-manufacturable spray-coating technology enables the fabrication of two different half-cell electric double layer capacitors (EDLC) with a spray-coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half-cell EDLC with the spray-coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half-cell EDLC with the spray-coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from -0.5 V to 0.5 V, the spray-coated thin film energy storage device exhibits a better performance.

흑연 코팅 집전체를 이용한 Lithium Terephthalate 기반 리튬-유기 이차전지의 전기화학적 특성 개선 (Improving the Electrochemical Properties of Lithium Terephthalate-based Lithium-Organic Battery with A Graphite Coated Current Collector)

  • 권오현;김종빈;김재광
    • 전기화학회지
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    • 제22권3호
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    • pp.122-127
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    • 2019
  • 유기이차전지가 가지고 있는 전극 내 낮은 접합력과 높은 계면저항의 단점을 해결하기 위하여 본 연구에서는 흑연 코팅 처리된 집전체를 사용하여 lithium terephthalate (LTA)전지의 전기화학적 특성 변화를 분석하였다. LTA 음극 활물질은 산의 이온 치환반응에 의하여 불순물 없이 합성되어 졌다. 막대 형태의 LTA 활물질로 제작된 전극과 흑연 코팅 처리된 집전체와의 접합특성은 SEM 단면과 EIS를 통하여 확인하였다. 흑연 코팅된 집전체를 사용한 LTA전지의 계면저항은 현저히 감소되었다. 순수한 금속 집전체 LTA 전지와 흑연 코팅 처리된 금속 기판 LTA 전지는 0.1C의 두 번째 사이클에서 107.6 mAh/g와 148.8 mAh/g의 방전 용량을 보인다. 흑연 코팅된 집전체를 사용한 LTA 전지는 순수한 LTA 전지에 비하여 우수한 수명 특성과 높은 방전 용량, 그리고 높은 고율 특성을 가진다.

고성능 아연-이온 전지의 고품질 집전체를 위한 그래핀 필름의 결함 제어 (Controlling Defects in Graphene Film for Enhanced-Quality Current Collector of Zinc-Ion Batteries with High Performance)

  • 이영근;안건형
    • 한국재료학회지
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    • 제33권4호
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    • pp.159-163
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    • 2023
  • Zinc-ion Batteries (ZIBs) are currently considered to be effective energy storage devices for wearable electronics because of their low cost and high safety. Indeed, ZIBs show high power density and safety compared with conventional lithium ion batteries (LIBs) and exhibit high energy density in comparison with supercapacitors (SCs). However, in spite of their advantages, further current collector development is needed to enhance the electrochemical performance of ZIBs. To design the optimized current collector for high performance ZIBs, a high quality graphene film is suggested here, with improved electrical conductivity by controlling the defects in the graphene film. The graphene film showed improved electrical conductivity and good electron transfer between the current collector and active material, which led to a high specific capacity of 346.3 mAh g-1 at a current density of 100 mA g-1, a high-rate performance with 116.3 mAh g-1 at a current density of 2,000 mA g-1, and good cycling stability (68.0 % after 100 cycles at a current density of 1,000 mA g-1). The improved electrochemical performance is firmly because of the defects-controlled graphene film, leading to improved electrical conductivity and thus more efficient electron transfer between the current collector and active material.

Research of an On-Line Measurement Method for High-power IGBT Collector Current

  • Hu, Liangdeng;Sun, Chi;Zhao, Zhihua
    • Journal of Power Electronics
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    • 제16권1호
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    • pp.362-373
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    • 2016
  • The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (uEe) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

THE EFFECT OF DOPANT OUTDIFFUSION ON THE NEUTRAL BASE RECOMBINATION CURRENT IN Si/SiGe/Si HETEROJUNCTION BIPOLAR TRANSISTORS

  • Ryum, Byung-R.;Kim, Sung-Ihl
    • ETRI Journal
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    • 제15권3_4호
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    • pp.61-69
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    • 1994
  • A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

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자기부상열차의 주행 환경을 고려한 집전자 마모도 평가 (Estimation of Power Collector Wear Considering the Operating Environment of a Maglev)

  • 이경복;마상견;임재원;박도영;손정룡;강현일
    • 전기학회논문지P
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    • 제66권1호
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    • pp.38-42
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    • 2017
  • The wear of the third track power collector is one of the essential check factors for safe train operation. Rapid wear of the current collector accelerates the line of the catenary. In addition, the arc generated when the catenary line is turned off causes a malfunction in the minute portion of the catenary line, thereby shortening the life of the catenary line. In this paper, to analyze the mechanical wear of the current collector during driving according to the environmental factor of the Maglev(magnetic levitation train), it was divided into dry season and wet season. the wear of metallized collector, copper alloy collector and carbon collector were measured and compared with each other. The wear rate was measured according to the position of the wire, the position of the power collector and the position per hour. Microscopic photographs of the cross section and surface of the power collector were measured. The electrical currents of the metallized collector, copper alloy collector and carbon collector were measured.

산성 전해질 기반의 전기 이중층 커패시터용 흑연 집전체의 전기화학적 안정성 평가 (Evaluation of Electrochemical Stability of Graphite Current Collector for Electric Double Layer Capacitor Based on Acid Electrolyte)

  • 박시진;안건형
    • 한국재료학회지
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    • 제31권5호
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    • pp.272-277
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    • 2021
  • Owing to its low cost, easy fabrication process, and good ionic properties, aqueous supercapacitors are under strong consideration as next-generation energy storage devices. However, the limitation of the current collector is its poor electrochemical stability, leading to low energy storage performance. Therefore, a reasonable design of the current collector and the acidic electrolyte is a necessary, as well as interfacial engineering to enhance the electrochemical performance. In the present study, graphite foil, with excellent electrochemical stability and good electrical properties, is suggested as a current collector of aqueous supercapacitors. This strategy results in excellent electrochemical performance, including a high specific capacitance of 215 F g-1 at a current density of 0.1 A g-1, a superior high-rate performance (104 F g-1 at a current density of 20.0 A g-1), and a remarkable cycling stability of 98 % at a current density of 10.0 A g-1 after 9,000 cycles. The superior energy storage performance is mainly ascribed to the improved ionic diffusion ability during cycling.

바나듐 레독스-흐름 전지에서 집전체의 전기화학적 특성 (Electrochemical Properties of Current Collector in the All-vanadium Redox Flow Battery)

  • 황갑진;오용환;유철휘;최호상
    • Korean Chemical Engineering Research
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    • 제52권2호
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    • pp.182-186
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    • 2014
  • 두 종류의 집전체(BP, bipolar plate)를 사용하여 바나듐 레독스-흐름 전지(V-RFB, vanadium redox-flow battery)의 성능을 평가하였다. V-RFB의 성능평가는 $60mA/cm^2$의 전류밀도에서 진행하였다. A 집전체를 사용한 V-RFB의 기전력(SOC 100%에서의 OVC)은 1.47V, B 집전체를 사용한 V-RFB의 기전력은 1.54V를 나타냈다. A 집전체를 사용한 V-RFB의 셀 저항은 충전시에 $4.44{\sim}5.00{\Omega}{\cdot}cm^2$을, 방전시에 $3.28{\sim}3.75{\Omega}{\cdot}cm^2$를 보였으며, B 집전체를 사용한 V-RFB의 셀 저항은 충전시에 $4.19{\sim}4.42{\Omega}{\cdot}cm^2$, 방전시에 $4.71{\sim}5.49{\Omega}{\cdot}cm^2$를 나타냈다. 각 집전체를 사용한 V-RFB의 성능은 5회 충방전 실험을 진행하여 평가하였다. A 집전체를 사용한 V-RFB는 평균 전류효율 93.1%, 평균 전압효율 76.8%, 평균 에너지효율 71.4%를 나타냈으며, B 집전체를 사용한 V-RFB는 평균 전류효율 96.4%, 평균 전압효율 73.6%, 평균 에너지효율 71.0%를 나타냈다.

Application of a General Gas Electrode Model to Ni-YSZ Symmetric Cells: Humidity and Current Collector Effects

  • Shin, Eui-Chol;Ahn, Pyung-An;Seo, Hyun-Ho;Lee, Jong-Sook
    • 한국세라믹학회지
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    • 제53권5호
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    • pp.511-520
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    • 2016
  • Electrolyte-supported symmetric Ni-YSZ cermet electrodes of ca. $23{\mu}m$ were prepared by screenprinting and the impedance was measured as a function of humidity from 2% to 90% balanced in $H_2$ at a total flow rate of 50 sccm. The Ni felt current collector of 1 mm thickness exhibited a Gerischer-like gas concentration impedance in the low frequency range, which was similarly observed in the cermet-supported solid oxide cells, while the Pt paste collector exhibited only electrochemical polarization. The electrochemical polarization of both samples was modeled by a non-ideal diffusion-reaction transmission line model including CPEs with ${\alpha}$= 0.5. In the case of the Pt paste collector, all the Bisquert parameters exhibited humidity dependence to the -1/2 power, supporting a non-faradaic chemical reaction mechanism at three phase boundaries. Consequently, the surface diffusivity and reaction rate increased linearly with humidity. Less pronounced humidity dependence and somewhat lower utilization length with an Ni felt collector can be attributed to the diffusion-limited gas flow through the collector.

접속 속도 향상 및 전력소모를 줄인 위성용 접속회로 연구 (Research for the interface circuit to reduce static current and rising time)

  • 원주호;고형호
    • 한국위성정보통신학회논문지
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    • 제11권3호
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    • pp.114-118
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    • 2016
  • 인공위성은 다양한 제작사에서 공급하는 전장품들로 구성되는 시스템이다. 각 제작사에서는 각 제작사에서 사용하는 제작 이력 및 제작하는 위성 요구조건에 따라 다양한 내부전원을 사용하게 된다. 따라서 전장품마다 사용하는 내부전원이 다르기 때문에 전장품 사이의 접속요건에 대한 분석이 필수적이다. 접속요건에 대한 검증을 완화시키기 위해서 사용되는 회로가 Open Collector회로로, Open collector는 내부전원 차이에서 발생하는 문제를 완화시킬 수 있지만, 정전류에 의한 전력소모 증가 및 상승시간의 증가와 offset 전압 문제를 발생시킬 수 있다. 따라서 본 논문에서는 전력소모를 감소시키면서 빠른 반응시간을 얻기 위한 접속회로를 제안하고, 감소되는 전력 및 상승시간 감소를 분석한다.