• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.43-50
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• 1992

$ LiNbO_3$ single crystals were grown using the Czochralski Method at various pulling speeds. Macroscopic defects such as cracks, bubbles and cellular structures were observed in some crystals. Cracks and bubbles observed in the crystals depended on the pulling speed and cooling rate. $ LiNbO_3$ crystals of about 15mm diameter could be grown properly at 6-7mm/h pulling speed and $ 20^{circ}C/h$ cooling rate. In order to investigate dielectric properties and optical properties for device application, these properties were measured for the sample cut along a axis and c axis at different temperatures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.19-19
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• 2011

We studied the effect of Dy content on the magnetic properties of cobalt ferrite single crystal. The $CoFe_{1.9}Dy_{0.1}O_4$ single crystals were grown by the flux method by using $Na_2B_4O_{7.}10H_2O$ (Borax) as a solvent (flux). The black and shiny single crystals were obtained as a product. The X-ray diffraction test at room temperature confirmed the spinel cubic symmetry with lattice constant a = $8.42{\AA}$ of the single crystals. The presences of constitute elements (Co, Fe and Dy) was endorsedby EDAX analysis. The saturation magnetization (Ms) of $CoFe_{1.9}Dy_{0.1}O_4$ single crystals was measured and is found to be 72emu/g or equivalently $3.2{\mu}B$/f.u. at 300 K. The observed Ms and coercivity (Hc) is found to be lower than that of pure $CoFe_2O_4$.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.73-78
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• 2003

(Ba/sub 1-x/Sr/sub x/)TiO₃ (BST, 0.4< x <0.65) single crystals were successfully grown by the TSSG (Top-Seeded Solution Growth) method, using a commercial [100] SrTiO₃ or as-grown [100] BST single crystals as seed crystals. To obtain the BST single crystals with various compositions x, the Ba/sr molar ratios in the solutions were systematically controlled while the Ti ion content among all cations was fixed at 67 mol%. A linear regression curve between their x values and the molar ratios of Sr/(Ba + Sr) in the solutions could be obtained, which in turn could used to select the initial composition to produce BST crystal with an aimed x value. In addition, the isothermal growth was found more effective for obtaining a compositional uniformity than a slow cooling process.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.159-162
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• 2006

We reviewed our recent advances in LC mixture development identifying the new classes of materials to yield LC mixtures with faster switching times and better reliability

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.920-924
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• 2011

ZnO crystals with belt and comb shapes were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite structure of hexagonal phase. Energy dispersive x-ray (EDX) spectra showed that the ZnO was of high purity. In the cathodoluminescece spectra obtained for the ZnO crystals with belt and comb shapes, a strong ultraviolet emission centered at 380nm was observed, which indicates the ZnO crystal has high crystalline quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.384-386
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• 1999

The distribution coefficients of Ni and Zn to the Cu site in $La_{2-x}Sr_{x}CuO_{4}$(LCO) were investigated to determine the suitable solvent composition ofr crystal growth of $La_{2}{Cu}_{1-x}{M}_{x}{O}_{4}$(M=NI, Zn)(LCMO), and were found to be 4.2 for NI and 0.66 for Zn, respectively. Single crystals of LCO, and LCMO of high homogeneity were grown by traveling solvent floating zone technique using suitable solvents. NO diamagnetic signals were observed for all substituted crystals. This fact suggests that crystals of LCO partially substituted by Ni or Zn are useful as substrate crystals.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.711-714
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• 2002

The Ce, Mn: $LiTaO_3$ crystals were grown by Czochralski method in congruent ${\varphi}$3＂ $LiTaO_3$ single crystal growing conditions. Concentrations of Ce and Mn in melt were respectively 0.1 mole%. As-grown crystals were red, transparent and the grown crystals were tested with oxidation/reduction treatment for clor and other properties. Influence of Ce and Mn dopants on $LiTaO_3$ crystal properties was discussed. And the nonlinear optical properties of the Ce, Mn: $LiTaO_3$ crystal are being studied.