• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• 폴리머
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• 제24권5호
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• pp.656-663
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• 2000

용융방사에 의한 선형 폴리락트산(polylactic acid, PLLA) 섬유가공에 있어서 가공 시 PLLA에 가해진 열 이력이 섬유의 기계적 특성과 결정화도에 미치는 영향을 살펴보았다. PLLA의 가공 시 가해진 열 이력에 의하여 PLLA의 분자량이 감소하며 이러한 분자량의 감소는 PLLA 섬유의 배향도 감소와 결정화도의 감소를 유발시킨다. 그 결과, PLLA 섬유의 인장강도와 탄성계수가 감소하며 신율이 증가됨을 확인할 수 있었다. PLLA의 용융방사에서 발현된 결정화는 PLLA의 느린 결정화 속도에 의하여 thermal induced crystallization보다는 stress induced crystallization에 기인함을 알 수 있었다. PLLA 섬유를 열처리하였을 경우, 상대적으로 분자량이 작고 열 이력을 받은 PLLA로 만들어진 섬유가 열 이력을 받지 않은 PLLA로 만들어진 섬유보다 결정화도가 높음을 확인하였다. 이로 보아 열처리에 의한 결정화도의 증가는 stress, Induced crystallization보다는 thermal induced crystallization에 기인함을 알 수 있었다.

• 한국재료학회지
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• 제33권2호
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• pp.63-70
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• 2023

In this study, crystallization was effectively suppressed in Al-based metallic glasses (Al-MGs) during pulverization by cryo-milling by applying an extremely low processing temperature and using a surfactant. Before Al-MGs can be used as an additive in Ag paste for solar cells, the particle sizes of the Al-MGs must be reduced by milling. However, during the ball milling process crystallization of the Al-MG is a problem. Once the Al-MG is crystallized, they no longer exhibit glass-like behavior, such as thermoplastic deformation, which is critical to decrease the electrical resistance of the Ag electrode. The main reason for crystallization during the ball milling process is the heat generated by collisions between the particles and the balls, or between the particles. Once the heat reaches the crystallization temperature of the Al-MGs, they start crystallization. Another reason for the crystallization is agglomeration of the particles. If the initially fed particles become severely agglomerated, they coalesce instead of being pulverized during the milling. The coalesced particles experience more collisions and finally crystallize. In this study, the heat generated during milling was suppressed by using cryo-milling with liquid-nitrogen, which was regularly fed into the milling jar. Also, the MG powders were dispersed using a surfactant before milling, so that the problem of agglomeration was resolved. Cryo-milling with the surfactant led to D50 = 10 um after 6 h milling, and we finally achieved a specific contact resistance of 0.22 mΩcm² and electrical resistivity of 2.81 μΩcm using the milled MG particles.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.1659-1661
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• 2004

Measurement of supersaturation is important in crystallization processes, because it is one of key factors to control crystal size distribution and shape determining product quality. A monitoring system of the supersaturation using a quartz crystal sensor is applied to the supersaturation measurement. From the variation of resonant frequency, the beginning of the formation of salt crystal on the sensor surface is detected while the sensor is directly cooled down. The degree of supersaturation is computed from the solubility difference at the temperatures of the salt solution and the sensor. The performance of the propsed system of the supersaturation measurement is examined by applying the system to the crystallization of three different salt solutions. The experimental outcome compared with eye observation result and photographic analysis indicates that the proposed system is effective and useful to determine the supersaturation in the crystallization process. In addition, the microscopic monitoring of the initial stage crystallization is available with the sensor system.

• Macromolecular Research
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• 제14권1호
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• pp.45-51
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• 2006

We conducted simultaneous, small-angle, X-ray scattering/differential scanning calorimetry (SAXS/DSC) and simultaneous, wide-angle, X-ray scattering (WAXS)/DSC measurements for a polymer blend of poly($\varepsilon$-caprolactone)/poly(ethylene glycol)(PCL/PEG). The time-dependent SAXS/DSC and WAXS/DSC results, measured while the system was quenched below the melting temperature of PCL from a melting state, revealed the competitive behavior between liquid-liquid phase separation and crystallization in the polymer blend. The time-dependent structural evolution extracted from the SAXS/WAXS/DSC results can be characterized by the following four stages in the PCL crystallization process: the induction (I), nucleation (II), growth (III), and late (IV) stages. The influence of the liquid-liquid phase separation on the crystallization of PCL was also observed by phase-contrast microscope and polarized microscope with 1/4$\lambda$ compensator.

• 폴리머
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• 제39권2호
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• pp.268-274
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• 2015

In this paper, the isothermal crystallization kinetics of a functional PP (FPP) with different grafting yields (GY)-methacryloxyethyltrimethyl ammonium chloride (DMC) grafted PP were investigated by differential scanning calorimetry (DSC). The results showed that the crystallization rate of FPP (GY=4.83%) was the highest for all of the studied samples. Furthermore, for the FPP with different GY, the value of $t_{1/2}$ became longer with increasing the grafting yield (GY). The possible explanation was that the quaternary ammonium groups introduced affected the crystallization process of the FPP in two opposite directions, i.e. promoting the nucleation and hindering the transport of the chain molecules towards the growing nuclei. Polarized optical micrographs showed that the DMC chains acted as nucleating agents, which accelerated the nucleation. In addition, the results showed the FPP had lower nucleation free energy than the PP. This study would be useful for designing the processing parameters of the grafted samples.

• 한국미생물·생명공학회지
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• 제42권3호
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• pp.297-301
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• 2014

본 연구에서는 실리카겔을 이용한 반응액 부피당 표면적(surface area per volume of reaction solution)이 증가된 반코마이신 결정화 공정에서 이온성 액체의 영향을 조사하였다. 실리카겔로 표면적을 증가시킨 경우에 이온성 액체([BMIm][$BF_4$])를 접목하면 결정화 효율을 더욱 향상시킬 수 있었다. 실리카겔을 이용한 표면적이 증가된 결정화에서 이온성 액체(20%, v/v)를 첨가한 경우 결정화 4시간에 반코마이신 결정이 생성되었으며 실리카겔과 이온성 액체를 사용하지 않은 경우보다 결정화에 소요되는 시간을 6배 정도 단축시킬 수 있었다. 또한 이온성 액체 첨가량이 증가함에 따라 반코마이신 결정 입자크기가 감소할 뿐만 아니라 결정이 균일하고 일정해짐을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.715-717
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• 2006

$NiCl_2$ vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the $NiCl_2$ compound. The $NiCl_2$ atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.254-257
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• 2009

The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.

• 한국진공학회지
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• 제12권2호
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• pp.130-135
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• 2003

최근, poly-Si 박막은 저가의 박막소자응용을 위하여 사용되어 왔다. 그러나, 유리기판 위에서 일반적인 고상결정화(SPC) 방식으로 poly-Si 박막을 얻기는 불가능하다. 이러한 단점 때문에 유리와 같은 저가기판 위에 poly-Si을 결정화하는 연구가 최근 다양하게 진행되고 있다. 본 논문에서는 급속열처리(RTA)를 이용하여 유연한 기판인 몰리브덴 기판 위에서 a-Si:H를 성장시킨 후 고온결정화에 대한 연구를 진행하였다 고온결정화된 poly-Si 박막은 150$\mu\textrm{m}$ 두께의 몰리브덴 기판 위에 성장되었으며 결정화 온도는 고 진공하에서 $750^{\circ}C$~$1050^{\circ}C$ 사이에서 결정화된 시료에 대하여 결정화도, 결정화 면방향, 표면구조 및 전기적 특성이 조사되었다. 결정화온도 $1050^{\circ}C$에서 3분간 결정화된 시료의 결정화도는 92%를 나타내고 있었다. 결정화된 poly-Si 박막으로 제작된 TFT 소자로부터 전계효과 이동도 67 $\textrm{cm}^2$/Vs을 얻을 수 있었다.