• ETRI Journal
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• 제19권1호
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.158-158
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• 2006

The correlation between liquid-liquid phase separation (LLPS) and crystallization at several compositions in statistical copolymer blends of poly (ethylene-co-hexene) (PEH) and poly (ethylene-co-butene) (PEB) has been examined. In this case, the LLPS is coupled with the other ordering process, i.e. crystallization. The overwhelming change in the crystallization kinetics due to the composition fluctuation caused by the spontaneous spinodal LLPS is observed. This coupling mechanism suggests a new mechanism in the nucleation-crystallization process.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 1999년도 제1회 학술대회논문집(KIASC 1st conference 99)
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• pp.51-53
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• 1999

The crystallization mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied from the relations between crystallization and volume changes by dilatometry. Further, the effect of addition of CdO on the crystallization mechanism and superconductivity was discussed. The shrinkage of the amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ occurred with the crystallization of $Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase decrease with increasing CdO content with a minimum at x=0.4. Better superconductivity was obtained in the specimens formation less amount of the$Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase during the crystallization process.

• 한국세라믹학회지
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• 제35권11호
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• pp.1162-1170
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• 1998

PbO-TiO2-B2O3-BaO 계 유리상에서 PbTiO3의 결정화 메커니즘에 대한 이론적 고찰 및 전자현미경 관찰 그리고 결정화 기구의 열시차 분석에 대한 응용성을 조사하였다. 열시차 분석에 대한 Kissinger 식의 응용은 DTA 분석시 시료내 핵밀도가 변하지 않을 때 적용할 수 있으며, 표면결정화를 유도하기 위해 분말시료를 사용하는 경우도 활성화 에너지를 시료의 결정화 메커니즘에 크게 영향을 받는다. Ozawa 식에 의한 Avrami parameter n은 전자현미경 관찰에 의해 파악된 결정화메커니즘과 잘 일치하고 있었으며, 수정 Kissinger 식은 시료의 결정화 메커니즘을 반영하고 있어 시료의 전처리와 관계없이 참값의 활성화에너지를 구할 수 있다.

• 한국재료학회지
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• 제26권1호
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• pp.54-60
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• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• Macromolecular Research
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• 제11권1호
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• pp.25-35
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• 2003

A series of random poly(ethylene-co-1,4-butylene terephthalate)s (PEBTs), as well as poly(ethylene terephthalate) (PET) and poly(1,4-butylene terephthalate) (PBT), were synthesized by the bulk polycondensation. Their composition, molecular weight, and thermal properties were determined. All the copolymers are crystallizable, regardless of the compositions, which may originate from both even-atomic-numbered ethylene terephthalate and butylenes terephthalate units that undergo inherently crystallization. Non-isothermal crystallization exotherms were measured over the cooling rate of 2.5-20.0 K/min by calorimetry and then analyzed reasonably by the modified Avrami method rather than the Ozawa method. The results suggest that the primary crystallizations in the copolymers and the homopolymers follow a heterogeneous nucleation and spherulitic growth mechanism. However, when the cooling rate increases and the content of comonomer unit (ethylene glycol or 1,4-butylene glycol) increases, the crystallization behavior still becomes deviated slightly from the prediction of the modified Avrami analysis, which is due to the involvement of secondary crystallization and the formation of relatively low crystallinity. Overall, the crystallization rate is accelerated by increasing cooling rate but still depended on the composition. In addition, the activation energy in the non-isothermal crystallization was estimated.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1407-1411
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국레이저가공학회지
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• 제6권2호
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• pp.9-17
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• 2003

Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

• 한국세라믹학회지
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• 제43권4호
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• pp.230-234
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• 2006

Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.