• Archives of design research
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• v.17 no.4
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• pp.241-250
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• 2004

In this research, the copper alloy plates C2200, C5210, C7701, C8113 were selected to make datum and to identify further usage of metal craft experimentation. For its experimentation, the general welding and TIG welding methods were researched; for 2nd experimentation, the Reticulation and Electroforming skill's differences in color and temperature were researched. With these methods 3 different kinds of works are introduced for sample studies. For this research, Dr. Lee, Dong-Woo who works in Poongsan Metal Co, supported 4 kinds of copper alloy metals. Which are Commercial bronze (Cu-Zn), Deoxidiged Copper(Cu-Sn-P), Nickel Silver (Cu-Ni-Zn), and White Bronze (Cu-Ni); they were applied partly and wholly by the method of Laminatin, Reticulation, Fusing, and Electroforming skills. In case of C2200, the brass, the A. C. TIG welding method is better under 2mm slight plate; the D.C. TIG welding is better upper 2mm plate; and 250~300$^{\circ}C$ is recommended for remain heat treatment. In case of C5210, not having Hydrogen in high temperature return period, doesn't need Oxygen in high temperature and hardening in comparative high temperature neither, it is good for welding. It contains Sn 2-9% ad P 0.03-0.4% generally; and in accordance with the growth rate of Sn contain amount, the harden temperature boundary become broad. In case of cold moment after welding, they are recommended that higher speed TIG welding, smaller melting site and less than 200$^{\circ}C$ for pre-heating temperature. In case of C7701, the 10-20% Ni, 15-30% Zn are widely used.. If it is upper 30% Zn, it become (${\alpha}+{\beta}$) system and adhesive power rate become lower, and the productivity become lower in low temperature but the productivity become higher in high temperature. Nickel Silver's resistance of electricity is well; and the heatproof and incorrodibility is good, too. Lastly, in case of C8113, good at persistence in salty and grind; high in strength of high temperature. In case of white brass, contain 10-30% Nickel and hardened in high temperature and become single phrase. For these reason, the crystallization particles easily become large, if the resistance become higher small amount of Pb, P, S separation rate become higher.

• Economic and Environmental Geology
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• v.37 no.5
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• pp.569-583
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• 2004

The rock properties of the West pagoda in the Gameunsaji temple site are composed mainly of dark grey porphyritic granodiorite with medium grained equigranular texture and developed with small numerous dioritic xenoliths. These xenoliths occurred with small holes due to different weathering processes. As a weathering results, the rock properties of this pagoda occur wholly softened to physical hardness because of a complex result of petrological, meteorological and biological causes. Southeastern part of the pagoda deteriorated seriously that the surface of rock blocks showed partially exfoliations, fractures, open cavities in course of granular decomposition of minerals, sea water spray and crystallization of salt from the eastern coast. The Joint between blocks has small or large fracture cross each other, contaminated and corrupted for inserting with concrete, cement mortar, rock fragments and iron plates, and partially accelerated coloration and fractures. There are serious contamination materials of algae, fungus, lichen and bryophytes on the margin and the surface on the roof stone of the pagoda, so it'll require conservation treatment biochemically for releasing vegetation inhabiting on the surface and the discontinuous plane of the blocks because of adding the weathering activity of stones and growing weeds naturally by soil processing on the fissure zone. Consisting rock for the conservation and restoration of the pagoda would be careful choice of new rock properties and epoxy to reinforce for the deterioration surfaces. For the attenuation of secondary contamination and surface humidity, the possible conservation treatments are needed.

• Economic and Environmental Geology
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• v.49 no.5
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• pp.389-410
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• 2016

Wide ranges of fission-track (FT) ages were obtained from the Jurassic granite batholith in Jeonju-Gimje-Jeongeup area, southwestern Okcheon Belt: sphene=158~70 Ma; zircon=127~71 Ma; apatite=72~46 Ma. Thermochronological analyses based on undisturbed primary cooling and reset or partially-reduced FT ages, and some track-length data reveal complicated thermal histories of the granite. The overall cooling of the batholith is characterized by a relatively rapid earlier-cooling (${\sim}20^{\circ}/Ma$) to $300^{\circ}C$ isotherm since its crystallization and a very slow later-cooling ($2.0{\sim}1.5^{\circ}/Ma$) through the $300^{\circ}C-200^{\circ}C-100^{\circ}C$ isotherms to the present surface temperature. It is indicated that the large part of Jurassic granitic body experienced different level of elevated temperatures at least above $170^{\circ}C$ (maximum>$330^{\circ}C$) by a series of igneous activities in late Cretaceous. Consistent FT zircon ages from duplicate measurements for two sites of later igneous bodies define their formation ages: e.g., quartz porphyry=$73{\pm}3Ma$; diorite=$73{\pm}2Ma$; rhyolite=$72{\pm}3Ma$; feldspar porphyry=$78{\pm}4Ma$ (total weighted average=$73{\pm}3Ma$). Intrusions of these later igneous bodies and pegmatitic dyke swarms might play important roles in later thermal rise over the study area including hot-spring districts (e.g., Hwasim, Jukrim, Mogyokri, Hoebong etc.). On the basis of an assumption that the latercooling of granite batholith was essentially controlled by the denudation of overlying crust, the uplift since early Cretaceous was very slow with a mean rate of ~0.05 mm/year (i.e., ~50 m/Ma). Estimates of total uplifts since 100 Ma, 70 Ma and 40 Ma to present-day are ~5 km, ~3.5 km and ~2 km, respectively. The consistent values of total uplifts from different locations may suggest a regional plateau uplift with a uniform rate over the whole granitic body.

• The Journal of the Petrological Society of Korea
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• v.4 no.1
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• pp.31-48
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• 1995

The Jurassic Kwanaksan stock, so far known to be composed of biotite granite only, has the mineral assemblage of quartz+K-feldspar+plagioclase+biotite${\pm}$gernet. The lithology of the stock is classified as alkali feldspar granite by their mode and plagioclase compositions (An<5). Subsolvus feldspars, rather early crystallization of biotite, and shallow emplacement depth estimated from Q-Ab-Or diagram suggest hydrous nature of the magma, which contrasts with anhydrous A-type like geochemistry described below. Major and trace element compositions of the Kwanaksan stock are distinct from those of the adjacent Seoul batholith, suggesting a genetic difference between the two, The Kwanaksan stock shows geochemical characteristics similar to A-type granite in contrast to most other Mesozoic granites in Korea, in that it has high $SiO_2$(73~78wt%), $Na_2O+K_2O$, Ga(27~47 ppm). Nb(22~40 ppm), Y(48~95 ppm), Fe/Mg and Ga/Al, and low CaO(<0.51 wt%). Ba (8~75 ppm) and Sr(2~23 ppm). However, it has lower Zr and LREE and higher Rb(384~796 ppm) than typical A-type granite. LREE-depleted rare earth element pattern with strong negative Eu anomaly of previous studies is reinterpreted as representing source magma characteristics. The residual material during partial melting is not compatible with pyroxenes, amphibole or garnet, while significant amount of plagioclase is required. Similarity of geochemistry of the Kwanaksan stock to A-type granite suggests the origin of the stock has a chose relationship with that of A-type granite. These observations lead us to propose that the Kwanaksan stock was formed by partial melting of felsic source rock.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.700-708
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• 1996

Electroless plating technique was utilized to flip chip bonding to improve surface mount characteristics. Each step of plating procedure was studied in terms pf pH, plating temperature and plating time. Al patterned 4 inch Si wafers were used as substrstes and zincate was used as an activation solution. Heat treatment was carried out for all the specimens in the temperature range from room temperature to $400^{\circ}C$ for $30^{\circ}C$ minutes in a vacuum furnace. Homogeneous distribution of Zn particles of size was obtained by the zincate treatment with pH 13 ~ 13.5, solution concentration of 15 ~ 25% at room temperature. The plating rates for both Ni-P and Au electroless plating steps increased with increasing the plating temperature and pH. The main crystallization planes of the plated Au were found to be (111) a pH 7 and (200) and (111) at pH 9 independent of the annealing temperature.

• Economic and Environmental Geology
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• v.19 no.3
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• pp.199-218
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• 1986

Arsenopyrite in arsenic and polymetallic ores from calcic Fe-W skarn deposit of the Ulsan mine, Republic of Korea, has been investigated by means of electron microprobe analysis and X-ray diffractometry. As a result, it is revealed that the Ulsan arsenopyrite may be classified into the following three species with different generation on the basis of its mode of occurrence, chronological order during polymetallic mineralization and chemical composition; arsenopyrites I, II and III. 1) Arsenopyrite I-(Ni, Co)-bearing species belonging to the oldest generation, which has crystallized together with (Ni, Co)-arsenides and -sulpharsenides in the early stage of polymetallic mineralization. In rare cases, it contains a negligible amount of antimony. It occurs usually as discrete grains with irregular outline, showing rarely subhedral form, and is diffused in skarn zone. The maximum contents of nickel and cobalt are 10.04 Ni and 2.45 Co (in weight percent). Occasionally, it shows compositional zoning with narrow rim of lower (Ni+Co) content. 2) Arsenopyrite II-arsenian species, in which (Ni+Co) content is almost negligible, may occur widely in arsenic ores, and its crystallization has followed that of arsenopyrite I. It usually shows subhedral to euhedral form and is closely associated with $l{\ddot{o}}llingite$, bismuth, bismuthinite, chalcopyrite, sphalerite, bismuthian tennantite, etc. It is worthy of note that arsenopyrite II occasionally contains particles consisting of both bismuth and bismuthinite. 3) Arsenopyrite III-(Ni, Co)-free, S-excess and As-deficient species is close to the stoichiometric composition, FeAsS. It occurs in late hydrothermal veins, which cut clearly the Fe-W ore pipe and the surrounding skarn zone. It shows euhedral to subhedral form, being extremely coarse-grained, and is closely associated with pyrite, "primary" monoclinic pyrrhotite, galena, sphalerite, etc. Among three species of the Ulsan arsenopyrite, arsenopyrite I does not serve as a geothermometer, because (Ni+Co) content always exceeds 1 weight percent. In spite of the absence of Fe-S minerals as sulphur-buffer assemblage, the presence of $Bi(l)-Bi_2S_3$ sulphur-buffer enables arsenopyrite II to apply successfully to the estimation of either temperature and sulphur fugacity, the results are, $T=460{\sim}470^{\circ}C$, and log $f(S_2)=-7.4{\sim}7.0$. With reference to arsenopyrite III, only arsenopyrite coexisting with pyrite and "primary" monoclinic pyrrhotite may serve to restrict the range of both temperature and sulphur fugacity, $T=320{\sim}440^{\circ}C$, log $f(S_2)=-9.0{\sim}7.0$. These temperature data are consistent with those obtained by fluid inclusion geothermometry on late grandite garnet somewhat earlier than arsenopyrite II. At the beginning of this paper, the geological environments of the ore formation at Ulsan are considered from regional and local geologic settings, and physicochemical conditions are suspected, in particular the formation pressure (lithostatic pressure) is assumed to be 0.5kb (50MPa). The present study on arsenopyrite geothermometry, however, does not bring about any contradictions against the above premises. Thus, the following genetical view on the Ulsan ore deposit previously advocated by two of the present authors (Choi and Imai) becomes more evident; the ore deposit was formed at shallow depth and relatively high-temperature with steep geothermal gradient-xenothermal conditions.

• Economic and Environmental Geology
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• v.44 no.4
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• pp.273-288
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• 2011

Chon-Ashuu copper mining claim area is located, in terms of the geotectonic setting, in the northern part of the suture line which is bounded with the marginal part of Issik-kul micro-continent on the southern part of North Tien-Shan terrane. The geological blocks of Chon-Ashuu districts belong to the southern tip of Kazakhstan orocline. The rock formation of this area are composed of the continental crust or/and arc collage and the paleo-continental fragments-accretionary wedge complex of pre-Altaid orogenic materials. ASI(Alumina Saturation Index) of Paleozoic plutonic rocks in Chon-Ashuu area belong to the peraluminous and metaluminous rocks which were generated from fractional crystallization of Island and volcanic arc crusts in syn-post collisional plate. The geology of the ChonAshuu area consists of upper Proterozoic and Paleozoic rock formations. According to Harker variation diagrams for Chon-Ashuu arenaceous sedimentary rocks, the silty sandstone of Chon-Ashuu area showing the mineralogical immaturity were derived from Island arc or the marginal environments of active continent in Cambro-Carboniferous period. Numerous intrusive rocks of Chon-Ashuu area are distributed along north east trending tectonic structures and are bounded on four sides by the conjugate pattern. The most common type of the plutonic rocks are granodiorite and monzodiorite. According to the molecular normative An-Ab-Or composition (Barker, 1979), the plutonic rocks in Chon-Ashuu area are classified into tonalite - trondhjemite - granodiorite (TTG) series which are an aggregation of rocks which is the country rock of copper mineralization, that are formed by melting of hydrous mafic crust at high pressure.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.

• The Journal of the Petrological Society of Korea
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• v.18 no.3
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• pp.223-236
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• 2009

Ultramafic xenoliths from southeastern part of Jeju Island can be grouped into two types: Type I and Type II. Type I xenoliths are magnesian and olivine-rich peridotite (mg#=89-91), which are commonly found at the outcrop. Most previous works have been focused on Type I xenoliths. Type II xenoliths, consisting of olivine, orthopyroxene and clinopyroxene with higher Fe and Ti components (mg#=77-83) and lower Mg, Ni, Cr, are reported in this study. They are less common with a more extensive compositional range. The studied Type II xenoliths are wehrlite, olivine-clinopyroxenite, olivine websterite, and websterite. They sometimes show ophitic textures in outcrops indicating cumulate natures. The textural characteristics, such as kink banding and more straight grain boundaries with triple junctions, are interpreted as the result of recrystallization and annealing. Large pyroxene grains have exsolution textures and show almost the same major compositions as small exsolution-free pyroxenes. Although the exsolution texture indicates a previous high-temperature history, all mineral phases are completely reequilibrated to some lower temperature. Orthopyroxenes replacing clinopyroxene margin or olivine indicate an orthopyroxene enrichment event. Mineral phases of Type II are compared with Type I xenoliths, gabbroic xenoliths, and the host basalts. Those from Type II xenoliths show a distinct discontinuity with those from Type I mantle xenoliths, whereas they show a continuous or overlapping relation with those from gabbroic xenoliths and the host basalts. Our petrographic and geochemical results suggest that the studied type II xenoliths appear to be cumulates derived from the host magma-related system, being formed by early fractional crystallization, although these xenoliths may not be directly linked to the host basalt.