• 제목/요약/키워드: crystalline silicon

검색결과 671건 처리시간 0.026초

실리콘 웨이퍼 연삭 가공의 기구학적 모델링과 해석 (Kinematic Modeling and Analysis of Silicon Wafer Grinding Process)

  • 김상철;이상직;정해도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.42-45
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    • 2002
  • General wheel mark in mono-crystalline silicon wafer finding is able to be expected because it depends on radius ratio and angular velocity ratio of wafer and wheel. The pattern is predominantly determined by the contour of abrasive grits resulting from a relative motion. Although such a wheel mark is made uniform pattern if the process parameters are fixed, sub-surface defect is expected to be distributed non-uniformly because of characteristic of mono-crystalline silicon wafer that has diamond cubic crystal. Consequently it is considered that this phenomenon affects the following process. This paper focused on kinematic analysis of wafer grinding process and simulation program was developed to verify the effect of process variables on wheel mark. And finally, we were able to predict sub-surface defect distribution that considered characteristic of mono-crystalline silicon wafer

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결정질 실리콘 태양전지에 적용될 Single diffusion step으로 형성한 selective emitter 관한 연구 (A study on selective emitter formed by single diffusion step for crystalline silicon solar cells)

  • 김민정;이재두;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.234-234
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    • 2010
  • Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.

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태양전지용 결정질 실리콘 웨이퍼에서의 레일리기준 기반 레이저산란의 광편향 분석에 관한 연구 (Study on Analysis of Optical Deflection of Laser Scattering Based on Rayleigh Criterion for Crystalline Silicon Wafer in Solar Cell)

  • 김경범
    • 반도체디스플레이기술학회지
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    • 제9권4호
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    • pp.31-37
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    • 2010
  • In this paper, optical deflection of laser scattering has been investigated based on Rayleigh criterion for crystalline silicon wafer in solar cell. A laser scattering mechanism is newly designed using light scattering properties in silicon wafer. Intensity distributions of laser scattering are different, depending on the incident angle of laser computed from Rayleigh criterion. In case of the incident angle satisfied with the criterion, they are asymmetric. Also, their specular reflection angle is shifted to unpredicted ones. These phenomena are in accordance with previous theories of laser scattering. The optical deflection of laser scattering is experimentally identified with the designed laser scattering mechanism. Its mathematical model is presented from the geometric relationship of laser scattering. It is shown that the optical deflection of laser scattering agree with the presented model, exclusive of grazing angles which is satisfied with Rayleigh criterion.

결정질 실리콘 태양전지에서 도금을 이용한 전극 형성 시 발생되는 레이저 손상 제거 (Removal of Laser Damage in Electrode Formed by Plating in Crystalline Silicon Solar Cells)

  • 정명상;강민구;이정인;송희은
    • 한국전기전자재료학회논문지
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    • 제29권6호
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    • pp.370-375
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    • 2016
  • In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

결정질 실리콘 및 CuInxGa(1-x)Se2 모듈의 부분음영에 따른 태양전지 특성 변화 및 바이패스 다이오드의 작동 메커니즘 분석 (Analysis of Mechanism for Photovoltaic Properties and Bypass Diode of Crystalline Silicon and CuInxGa(1-x)Se2 Module in Partial Shading Effect)

  • 이지은;배수현;오원욱;강윤묵;김동환;이해석
    • 한국재료학회지
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    • 제25권4호
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    • pp.196-201
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    • 2015
  • This paper presents the impact of partial shading on $CuIn_xGa_{(1-x)}Se_2(CIGS)$ photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, $1.99{\times}10^{-5}A/cm^2$, which was higher than that of crystalline silicon, $8.11{\times}10^{-7}A/cm^2$.

습식 화학 식각에 의한 다결정 실리콘 웨이퍼의 표면 분석 및 효율 변화 (Surface Analysis and Conversion Efficiency of Multi-crystalline Silicon Solar Cell by Wet Chemical Etching)

  • 박석기;도겸선;송희은;강기환;안형근;한득영
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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    • pp.111-115
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    • 2011
  • Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.

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PC1D 시뮬레이션을 이용한 결정질 실리콘 태양전지의 도핑 프로파일 모델링 (The Doping Profile Modeling of Crystalline Silicon Solar Cell with PC1D simulation)

  • 최성진;유권종;송희은
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.149-153
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    • 2011
  • The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.

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$Al_2O_3/SiN_x$ 후면 적층 패시베이션을 이용한 결정질 실리콘 태양전지의 효율 향상 연구 (Efficiency Improvement with $Al_2O_3/SiN_x$ Rear Passivation of p-type Mono-crystalline Silicon Solar Cells)

  • 천주용;백신혜;김인섭;천희곤
    • 반도체디스플레이기술학회지
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    • 제12권3호
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    • pp.47-51
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    • 2013
  • Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

결정질 실리콘 태양전지 표면 역 피라미드 구조의 특성 분석 (Influence of Inverted Pyramidal Surface on Crystalline Silicon Solar Cells)

  • 양지웅;배수현;박세진;현지연;강윤묵;이해석;김동환
    • Current Photovoltaic Research
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    • 제6권3호
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    • pp.86-90
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    • 2018
  • To generate more current in crystalline silicon solar cells, surface texturing is adopted by reducing the surface reflection. Conventionally, random pyramid texturing by the wet chemical process is used for surface texturing in crystalline silicon solar cell. To achieve higher efficiency of solar cells, well ordered inverted pyramid texturing was introduced. Although its complicated process, superior properties such as lower reflectance and recombination velocity can be achieved by optimizing the process. In this study, we investigated optical and passivation properties of inverted pyramid texture. Lifetime, implied-Voc and reflectance were measured with different width and size of the texture. Also, effects of chemical rounding at the valley of the pyramid were observed.

Improvement of Maskless Photolithography of Bio Pattern with Single Crystalline Silicon Micromirror Array

  • Jang, Yun-Ho;Lee, Kook-Nyung;Park, Jae-Hyoung;Shin, Dong-Sik;Lee, Yoon-Sik;Kim, Yong-Kweon
    • Journal of Electrical Engineering and Technology
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    • 제2권2호
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    • pp.274-279
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    • 2007
  • This study focuses on the enhancement of maskless photolithography as well as the peptide synthesis application with single crystalline silicon micromirrors. A single crystalline silicon micromirror array has been designed and fabricated in order to improve its application to the peptide synthesis. A micromirror rotates about ${\pm}\;9^{\circ}$ at the pull-in voltage, which can range from 90.7 V to 115.1 V. A $210\;{\mu}m-by-210\;{\mu}m$ micromirror device with $270\;{\mu}m$ mirror pitch meets the requirements of an adequately precise separation for peptide synthesis. Synthetic 16 by 16 peptide array corresponds to the same number of micromirrors. The large size of peptide pattern and the separation facilitate biochip experiments using fluorescence assay. The peptide pattern has been synthesized on the GPTS-PEG200 surface with BSA-blocking and thereupon the background was acetylated to reject non-specific bindings. Hence, an averaged slope at the pattern edge has been distinguishably improved in comparison to patterning results from an aluminum micromirror.