• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.47 no.2
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• pp.61-69
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• 2015

A number of researches have been carried out regarding the utilization of nanocellulose(crystalline nanocellulose, microfibrillated cellulose, nanofibrillated cellulose) for the manufacture of various kinds of composites and functional products. However, only few research works on the manufacturing characteristics of nanocellulose could be found, although some companies started already the production of nanocellulose in commercial scale. However, the most important thing in commercializing of production and utilization of nanocellulose is to develop the economical and efficient process. Thus, this study was carried out in order to investigate the effects of refining, alkaline pre-treatment and grinder clearance on the characteristics of microfibrillated cellulose and energy consumption. There was no significant differences in crystalline index with the degree of microfibrillation. The initial fibrillation could be improved by refining pre-treatment, but its effect was not observed anymore since the fibrillation was done up to certain level by grinding. Refining pre-treatment did not improved the energy efficiency. Alkaline pre-treatment can be helpful because the swelling of pulp fiber will facilitate fibrillation. It was found that the decrease in grinder clearance was helpful to improve the energy efficiency.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1269-1275
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• 1995

Effects of GeO2 addition on the thermal and structural stabilities of PbO-Bi2O3-Ga2O3 glasses were studied. Thermal stabilities, as assessed by the weighted thermal stability factors [(Tx-Tg)/Tg], increased with GeO2 concentraton from 0.097 to 0.210 with the addition of 20 mol% GeO2. Increasing GeO2 content resulted in the decrease of apparent density, molar volume, refractive index and thermal expansion. On the other hand, IR transmission cut-off (λT=50%) moved from 6.73${\mu}{\textrm}{m}$ for the ternary PbO-Bi2O3-Ga2O3 glass to shorter wavelength side, 5.98${\mu}{\textrm}{m}$ for a glass containing 20mol% GeO2. There were little change with GeO2 content, however, in the activation energies for the viscous flow of approximately 140 kcal/mole within the temperature interval of 300~50$0^{\circ}C$. Addition of GeO2 to PbO-Bi2O3-Ga2O3 glasses enhanced the thermal and structural stabilities significantly at the expense of their infrared transmittance. An appropriate compsomise between these two opposite trends should be made following the specifications of the final applications.

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• Journal of the Korean Solar Energy Society
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• v.31 no.1
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• pp.37-43
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• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with $156{\times}156\;mm^2$ area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching$7\;{\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $830^{\circ}C$ to $890^{\circ}C$to obtain the sheet resistance $30{\sim}70\;{\Omega}/{\box}$ with $10\;\Omega}/{\box}$ intervals. Solar cell made in $890^{\circ}C$ as the drive-in temperature revealed 17.1% conversion efficiency which is best in this study. This solar cells showed $34.4\;mA/cm^2$ of the current density, 627 mV of the open circuit voltage and 79.3% of the fill factor.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.35-40
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• 1999

The variations of the glass transition, melting peaks, molecular weight and its distribution (polydispersity index: PI) due to the annealing temperature and time have been investigated using the thermoplastic segmented polyurethanes (TPUs) and its blends based on the contents of hard segment. The position of the melting peak and its magnitude have been increased with the annealing temperature and time. This may be arised from the rearrangement of the microdomain structure due to the long-range or short-range segmental motion, the order-disorder transition of non-crystalline microphase, the variation of the domain size or the degree of disorder of crystalline structure by given different thermal histories. The annealing temperature and time affected the molecular weights and polydispersity : the number and weight average molecular weights were increased, while the polydispersity index (PI) deceased at certain temperatures : for TPU-35 at $135^{\circ}C$, for TPU-44 at $170^{\circ}C$ and for TPU-53 at $180^{\circ}C$. The temperatures which give the variations in molecular weights and in PIs are consistent with the annealing temperatures of which $T_3$ solely exists for each sample. Thus it is suggested that the chain dissosiation and recombination simultaneously occur at the above mentioned temperature for each sample.

• The Journal of Engineering Geology
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• v.21 no.4
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• pp.381-391
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• 2011

Weathering can reduce rock strength and eventually affect the structural stability of a rock mass, which is important in the field of engineering geology. Several methods have been developed to evaluate the degree of weathering, including the chemical weathering index. In this study, we analyzed the weathering degree and characteristics of microtextures and pores in crystalline rocks (gneiss and granites) based on petrographic observations, the chemical weathering index, mineralogy by XRD, microtextural analysis by SEM/EDS, measurements of pore size and surface area by the BET method, and microporosity by X-ray CT. The formation of secondary minerals and microtexture in gneiss and granitic rocks are assumed to be affected by complex processes such as dissolution, precipitation, and fracturing. Hence, it is clear that some chemical weathering indices that are based solely on whole-rock chemistry (e.g., CIA and CWI) are unable to provide reliable assessments of the degree of weathering. Great care is needed to evaluate the degree of chemical weathering, including an understanding of the mineralogy and microtexture of the rock mass, as well as the characteristics of micropores.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• The Korean Journal of Food And Nutrition
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• v.32 no.3
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• pp.161-166
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• 2019

The objective of this study was to evaluate the quality-based characteristics of Prunus mume fruit syrup, which is manufactured with various sugared sweeteners for suggestion of suitable alternative sweetener. Sweetener such as sucrose (MHP1), crystalline fructose (MHP2) and liquid fructo-oligosaccharide (MHP3) are used to manufacture Prunus mume fruit syrup. The sugar content of MHP1, MHP2 and MHP3 showed 53, 54 and $36^{\circ}Brix$, respectively. The total organic acid content of MHP1, MHP2 and MHP3 was 2.22, 3.07 and 3.71%. The total free sugar content of MHP1, MHP2 and MHP3 was 54.39, 47.52% and 31.62%, respectively. The appearance of MHP1 and MHP2 remained unchanged for the entire period but MHP3 had molded since the first week. This was as a result of the low total free sugar content in MHP3 sugared with liquid fructo-oligosaccharide compared to MHP1 and MHP2 sugared with solid sucrose and fructose. The sensory characteristics of MHP2 manufactured with crystalline fructose indicated an above average quality, indicating that it is difficult to manufacture Prunus mume fruit syrup using liquid sugar. It is suggested that crystalline fructose characterized solid form and lower glycemic index than sucrose be useful to manufacture Prunus mume fruit syrup as alternative sweetener.