• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1136-1139
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz~40GHz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose permittivity is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1085-1089
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz∼400Hz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is Performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose performance is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant TE$\sub$011/ mode, the permittivity and Q${\times}$f$\sub$0/ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• Korean Chemical Engineering Research
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• v.48 no.3
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• pp.405-408
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• 2010

A technique to measure the adsorption characteristic of surface area and pore size of a ceramic thin film is proposed, and its performance is examine. The thin film is fabricated directly on the resonator surface to measure the adsorption capacity of the film as it is, and using carbon dioxide makes the measurement easy. The results indicates that the measured surface area is satisfactory, while the pore size has some error. It is suggested that readily available carbon dioxide can be used to determine adsorption capacity of thin film at room temperature.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.103-106
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• 2005

This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is directly mounted on CMOS oscillator chips.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.460-463
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• 2003

We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.433-434
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• 2008

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.438-443
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• 2010

In this paper, behaviors of photonic crystal (PC) radiative structures and antenna arrays have been compared for two types of uniform and binomial excitations. Appropriate duality has been shown between them. These results can be generalized to other types of excitation and arrangement of photonic crystal radiative arrays such as linear, planar and circular arrays of three dimensional (3D) photonic crystal termination resonators. Using these results in designing photonic circuits has some advantages for shaping a particular radiative beam at the photonic crystal exit, for instance reducing the divergence angle of the main lobe in order to enhance the directivity, for better coupling, or for splitting the emitted beam, for dividing the output beam to the next devices in photonic integrated circuits (PIC). For analysis and simulation of the photonic crystal structures, the finite difference time domain (FDTD) method has been employed.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.224-225
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• 2003

이 연구에서는 광결정 (photonic crystal) 박막 (slab) 위에 제작된 막대형 공진기의 공진모드의 특성을 보고한다. 먼저 3차원 FDTD 방법을 이용하여 각각의 공진 모드들의 모드 형태, 공진주파수, 품위값(Q factor) 등을 구하였다. 광결정 격자의 주기가 $\alpha$ 일 때, 슬랩의 두께는 0.4 $\alpha$ , 구멍의 반지름은 0.35 $\alpha$ 로 하였다. 슬랩의 굴절률 (n) 은 실험에서 사용한 InP의 1.55 $\mu$m 에서의 굴절률 값인 3.4 로 정하였다. (중략)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.230-237
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• 1994

The paper studies the growth and application of LBO Crystal and points that thermodynamics and dynamics model of crystal growth should be developed in high-$\eta$(viscosity) melt. The measurement on properties of crystal resonator and press-controlled oscillator indicates that this kind of crystal is one kind of piezo-electric crystal materials which has large-market application potentiality.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.