• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1136-1139
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz~40GHz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose permittivity is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1085-1089
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz∼400Hz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is Performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose performance is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant TE$\sub$011/ mode, the permittivity and Q${\times}$f$\sub$0/ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• Korean Chemical Engineering Research
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• 제48권3호
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• pp.405-408
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• 2010

박막의 흡착특성인 흡착표면적과 세공크기를 수정진동자를 이용하여 측정하는 새로운 방법을 제안하였으며 그 성능을 조사하였다. 수정진동자의 표면에 박막을 직접 제조하여 흡착능을 측정함으로써 박막상태에서 흡착능을 측정하였으며, 이산화탄소를 피흡착 기체로 사용하여 측정이 용이하도록 하였다. 흡착측정 결과로부터 흡착면적은 양호하게 측정이 가능함을 알 수 있었으나, 세공크기의 측정에는 다소 오차가 발생하였다. 간단히 구할 수 있는 이산화탄소를 이용하여 상온에서 박막상태 흡착제의 흡착능 측정이 가능함을 제시하였다.

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.103-106
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• 2005

This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is directly mounted on CMOS oscillator chips.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.460-463
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• 2003

We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.433-434
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• 2008

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.438-443
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• 2010

In this paper, behaviors of photonic crystal (PC) radiative structures and antenna arrays have been compared for two types of uniform and binomial excitations. Appropriate duality has been shown between them. These results can be generalized to other types of excitation and arrangement of photonic crystal radiative arrays such as linear, planar and circular arrays of three dimensional (3D) photonic crystal termination resonators. Using these results in designing photonic circuits has some advantages for shaping a particular radiative beam at the photonic crystal exit, for instance reducing the divergence angle of the main lobe in order to enhance the directivity, for better coupling, or for splitting the emitted beam, for dividing the output beam to the next devices in photonic integrated circuits (PIC). For analysis and simulation of the photonic crystal structures, the finite difference time domain (FDTD) method has been employed.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.224-225
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• 2003

이 연구에서는 광결정 (photonic crystal) 박막 (slab) 위에 제작된 막대형 공진기의 공진모드의 특성을 보고한다. 먼저 3차원 FDTD 방법을 이용하여 각각의 공진 모드들의 모드 형태, 공진주파수, 품위값(Q factor) 등을 구하였다. 광결정 격자의 주기가 $\alpha$ 일 때, 슬랩의 두께는 0.4 $\alpha$ , 구멍의 반지름은 0.35 $\alpha$ 로 하였다. 슬랩의 굴절률 (n) 은 실험에서 사용한 InP의 1.55 $\mu$m 에서의 굴절률 값인 3.4 로 정하였다. (중략)

• 한국결정성장학회지
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• 제4권3호
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• pp.230-237
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• 1994

본 논문은LBO 결정성장 및 응용과 높은 점성을 갖는 용액에서 결정성장의 열역학과 동역학의 모델에 관하여 연구하였다. 결정공명과 press-controlled oscillator의 특성에 대한 측정은 이러한 종류의 결정이 많은 응용 가능서을 갖는 압전 결정재료의 한 종류임을 나타내 준다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.