• Proceedings of the Korean Society for Bioinformatics Conference
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• 2005.09a
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• pp.249-255
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• 2005

Angiotensin-converting enzyme (ACE) is primarily responsible for human hypertension. Current ACE drugs show serious cough and angiodema health problems due to the un-specific activity of the drug to ACE protein. The availability of ACE crystal structure (1UZF) provided the plausible biological orientation of inhibitors to ACE active site (C-domain). Three-dimensional quantitative structure-activity relationship (3D-QSAR) models have been constructed using the comparative molecula. field analysis (CoMFA) and comparative molecular similarity indices analysis (CoMSIA) for a series of 28 ACE inhibitors. Alignment for CoMFA obtained by docking ligands to 1UZF protein using FlexX program showed better statistical model as compared to superposition of corresponding atoms. The statistical parameters indicate reasonable models for both CoMFA (q$^2$ = 0.530, r$^2$ = 0.998) and CoMSIA (q$^2$= 0.518, r$^2$ = 0.990). The 3D-QSAR analyses provide valuable information for the design of ACE inhibitors with potent activity towards C-domain of ACE. The group substitutions involving the phenyl ring and carbon chain at the propionyl and sulfonyl moieties of captopril are essential for specific activity to ACE.

• Polymer(Korea)
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• v.34 no.3
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• pp.242-246
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• 2010

FTIR spectroscopy has been employed in order to quantitatively investigate the relationship between planar arrangements and selective reflectance of cholesteric liquid crystals. It was found that the selective reflection was enhanced as the amount of planar arrangements in cholesteric liquid crystals increased. Although the planar arrangements of cholesteric liquid crystals can be induced only by the shear force effect, it was more effective to use the alignment layer to obtain the perfect planar arrangements.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.6 no.5
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• pp.27-37
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• 1992

We studied the dielectric and dynamic mechanical losses according to the quenching condition in low density polyethylene being used to power cables. According to severe quenching condition, characteristics of the temperature in internal friction los peak have decreased the magnitude of loss peak as amorphous region lengthen. From now on, the frequency dependent characteristics of dielectric loss have investigated at room temperature, and the dielectric loss peak due to interface polarization, between crystal and amorphous region, occurs about 30[Hz], and that, the peak due to orientation polarization in correspondence to the loss peak in internal friction has observed at about 3 [MHz]. As quenching velocity increased, the effect on quenching condition about the dielectric loss has decreased the magnitude of the loss peak. Thus, estimation has been carried out on the activation energies nd the degree of crystallinity by means of X-ray diffraction are obtained as follows: room quenching : 26.4 [kal/mole] and 54.73 [%], ice quenching : 25.6 [kcal/mole] and 48.47 [%], liquid nitrogen quenching specimens : 22.56 [kcal/mole] and 40.95 [%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.574-577
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• 2002

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.753-758
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• 1994

(100) Si and 4$^{\circ}$off (100) Si were oxidized in dry oxygen, and the differences in thermal oxidation behavior and electrical characteristics between two specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 1000 to 120$0^{\circ}C$ showed that the oxidation rates of the 5$^{\circ}$ off (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) and 4$^{\circ}$off (100) Si were 25.8, 28.6 kcal/mol and those on the linear rate constant, B/A were 56.8, 54.9 kcal/mol, respectively. Variation of C-V characteristics with the oxidation temperature showed that the flat band voltages were shifted positively and surface state charge densities decreased as the oxidation temperature increased, and the surface state charge density of the 4$^{\circ}$off (100) Si was lower than that of the (100) Si. Also considerable decrease in the density of oxidation induced stacking faults (OSF) for the 4$^{\circ}$off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1279-1281
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• 1998

The Co-Cr thin films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) method has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films, Co-Cr thin films were deposited with continuously sputter gas pressure ($P_{Ar}$ = 0.1 mTorr) by FTS method at temperature of $40^{\circ}C$. We find that the change of thickness and deposition rate of sputtered Co-Cr thin films affect crystal orientation and magnetic properties. Crystallographic and magnetic properties were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM) respectively. It has been confirmed that the FTS method is very useful for preparing Co-Cr thin film recording media.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Composites Research
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• v.29 no.6
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• pp.375-378
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• 2016

Characteristics of nanocrystalline materials are known substantially dependent on the microstructure such as grain size, crystal orientation, and grain boundary. Thus it is desired to have systematic characterization methods on the various nanomaterials with complex geometries, especially in low dimensional nature. One of the interested nanomaterials would be a pure two-dimensional material, graphene, with superior mechanical, thermal, and electrical properties. In this study, mechanical properties of "polycrystalline" graphene were numerically investigated by molecular dynamics simulations. Subdomains with various sizes would be generated in the polycrystalline graphene during the fabrication such as chemical vapor deposition process. The atomic models of polycrystalline graphene were generated using Voronoi tessellation method. Stress strain curves for tensile deformation were obtained for various grain sizes (5~40 nm) and their mechanical properties were determined. It was found that, as the grain size increases, Young's modulus increases showing the reverse Hall-Petch effect. However, the fracture strain decreases in the same region, while the ultimate tensile strength (UTS) rather shows slight increasing behavior. We found that the polycrystalline graphene shows the reverse Hall-Petch effect over the simulated domain of grain size (< 40 nm).