• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.163-163
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• 2015

The effect of nematic liquid crystal(5CB-4-Cyano-4'-pentylbiphenyl) on the amorphous indium gallium zinc oxide thin film transistors(a-IGZO TFTs) was investigated. Through dropping the 5CB on the a-IGZO TFT's channel layer which is deposited by RF-magnetron sputtering, properties of a-IGZO TFTs was dramatically improved. When drain bias was induced, 5CB molecules were oriented by Freedericksz transition generating positive charges to one side of dipoles. From increment of the capacitance by orientation of liquid crystals, the drain current was increased, and we analyzed these phenomena mathematically by using MOSFET model. Transfer characteristic showed improvement such as decreasing of subthreshold slope(SS) value 0.4 to 0.2 and 0.45 to 0.25 at linear region and saturation region, respectively. Furthermore, in positive bias system(PBS), prevention effect for electron trapping by 5CB liquid crystal dipoles was observed, which showing decrease of threshold voltage shift [(${\delta}V$]_TH) when induced +20V for 1~1000sec at the gate electrode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.187-192
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• 2004

We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.610-614
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• 2005

In this paper, simple AT-cut crystal resonator utilizing $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ relaxator ceramics as load capacitator were designed and their frequency-temperature characteristics were investigated. In order to modify temperature dependance of dielectric constant, $Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3$ ceramics were manufactured with the variations in Sr substitution. At the composition with $6\;mol\%$ Sr substitution as load capacitator, frequency-temperature characteristics of AT-cut crystal resonators with the series load capacitance were similarly varied as those of cut orientation variation, and also compensated.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.4 s.235
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• pp.511-517
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• 2005

Fretting fatigue is often the root cause of the nucleation of cracks at attachments of structural components. Since fretting fatigue damage accumulation occurs over relatively small volumes, the subsurface cyclic plastic strain is expected to be rather non-uniformly distributed in polycrystalline materials. The scale of the cyclic plasticity and the damage process zones is often on the order of microstructure dimensions. Fretting damage analyses using cyclic crystal plasticity constitutive models have the potential to account for the influence of size, morphology, and crystallographic orientation of grains on fretting damage evolution. Two-dimensional plane strain simulations of fretting fatigue are performed using the cyclic properties of Ti-6Al-4V. The crystal plasticity simulations are compared to an initially isotropic $J_{2}$ theory with nonlinear kinematic hardening as well as to experiments. The influence of initially isotropic versus textured microstructure in the presence of crystallographic slip is studied.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.45-50
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• 2020

Magnetoelectric (ME) composites were designed using the PMN-PZT single crystal and Ni foils; the properties and magnetic-field sensitivities of ME composites with different piezoelectric vibration modes (i.e., 31, 32, and 36 modes that depend on the crystal orientation of the single crystal) were compared. In the off-resonance condition, the ME coupling properties of the ME composites with the 32 and 36 piezoelectric vibration modes were better than those of the ME composites with the 31 piezoelectric vibration mode. However, in the resonance condition, the ME coupling properties of the ME composites were almost similar, irrespective of the piezoelectric vibration mode. Additionally, in the off-resonance condition (at 1 kHz), the magnetic-field sensitivity of the ME composites with the 36 piezoelectric vibration mode was up to 2 nT and those of the ME composites with the 31 and 32 piezoelectric vibration modes were up to 5 nT. These magnetic-field sensitivities are similar to those offered by conventional high-sensitivity magnetic-field sensors; the potential of the proposed sensor to replace costly and bulky high-sensitivity magnetic field sensors is significant.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.16-19
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• 2009

We have studied the liquid crystal alignment properties for various alignment methods on the homogeneous polyimide surface. Suitable liquid crystal alignment for one-side alignment cell on the polyimide surface by all alignment method was observed. Highly pre-tilt angle of the NLC for both-side rubbing cell was measured. But, low pre-tilt angle of the NLC for one-side ion beam and UV irradiation cell was observed. We consider that the pre-tilt angle of NLC for one-side ion beam and UV irradiation on the PI surface is lower than that of the PI surface with rubbing. Also, the suitable transmittance-voltage curves for the one-side rubbing TN-LCD on the PI surface with one-side UV irradiation were measured. Also, good response time characteristics of the one-side rubbing TN-LCD on the polyimide surface with one-side UV irradiation can be measured.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.265-268
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• 2012

The growth of AlN single crystals of large size and good quality is of prime importance for UV LEDs and power devices applications. However, the crystals having the size of more than 1 inch and high quality have not been reported in the world. In the PVT growth of AlN, the crystal morphology of as grown were important because the preferred orientation of growth of it was evaluated for growth rate increase. In the present study, the AlN single crystals grown by PVT process were evaluated by the side of the growth morphology. Optical microscopic characterization was carried out to observe the shape of the crystals and the growth facets. Furthermore the growth habit of it were discussed by observation of the surface of AlN crystals.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.278-285
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• 1998

It was known that the C-IC transition in the mixed crystal $(A_{1-x}A^'_x)_2ZnCl_4$ is smeared out with increasing x, which is attributed to the pinning effect of the doped A' ions. In this study, we introduce a new mixed crystal system $K_2Zn_{1-X}Co_XCl_4$, where doped Co ions do not destroy the orientation of the polarization in C phase and preserve the long range ordering of IC phase. We grew a series of mixed crystals $K_2Zn_{1-X}Co_XCl_4$ for x=0, 0.001, 0.005, 0.01, 0.05, 0.1, 0.3, 0.5, 0.7, 1 by the Czochralski method and investigated the real composition of the mixed crystals, structure and the change of the C-IC phase transition with increasing x by the thermal analysis.

• Polymer(Korea)
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• v.31 no.5
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• pp.393-398
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• 2007

We studied the mechanism of liquid crystal alignment on polyvinylfluorocinnamate (PVCN-F) films which were irradiated by UV using polarized fourier transform infrared (FT-IR) spectroscopy and ultraviolet/visible (UV/Vis) spectroscopy. UV irradiation of PVCN-F films caused decrease of vinylene -C=C- stretching peak area at $1638cm^{-1}$ and shift of conjugated C:0 stretching vibration at $1712cm^{-1}\;to\;1734cm^{-1}$ which is caused by nonconjugated C=O stretching nitration. To study the orientation direction of 5CB liquid crystal (LC) molecules in the liquid crystal cell with PUV irradiation, rubbing treatment or without any treatment on the PVCN-F alignment layer, we used polarized FT-IR dichroism technique. We successfully measured 5CB LC alignment directions, which are perpendicular to the irradiated PUV polarization direction and parallel to the rubbing direction in the liquid crystal cell without using dichroic dyes.