• 한국재료학회지
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• 제34권5호
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• pp.242-246
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• 2024

La modified lead zirconate titanate ceramics (Pb_0.92La_0.08)(Zr_0.95Ti_0.05)O₃ = PLZT-8/95/5 were prepared using the conventional solid state reaction method in order to investigate the complex impedance characteristics of the PLZT-8/95/5 ceramic according to temperature. The complex impedance in the PLZT-8/95/5 ceramic was measured over a temperature range of 30~550 ℃ at several frequencies. The complex dielectric constant anomaly of the phase transition was observed near T_U1 = 179 ℃ and T_U2 = 230 ℃. A remarkable diffuse dielectric constant anomalous behaviour of the complex dielectric constant was found between 100 ℃ and 550 ℃. The complex impedance spectra below and above T_U1 and T_U2 were fitted by the superposition of two Cole-Cole types of impedance relaxations. The fast component in the higher frequency region may be due to ion migration in the bulk, and the slow component in the lower frequency region is interpreted to be the formation and migration of ions at the grain boundary or electrode/crystal interfacial polarization.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1022-1025
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• 2008

To the best of our knowledge, for the first time, we applied impedance spectroscopy to analysis on OLED degradation mechanism by monitoring impedance change during constant voltage aging, and modeling OLED with lumped circuit elements. Change in each element value was used to explain charge accumulation and field redistribution in each organic layer.

• Advances in materials Research
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• 제2권2호
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• pp.119-131
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• 2013

Impedance and electrical conduction studies of $Ba(Nd_{1/2}Nb_{1/2})O_3$ ceramic prepared using conventional high temperature solid-state reaction technique are presented. The crystal symmetry, space group and unit cell dimensions were estimated using Rietveld analysis. X-ray diffraction analysis indicated the formation of a single-phase cubic structure with space group $Pm\bar{3}m$. Energy dispersive X-ray analysis and scanning electron microscopy studies were carried to study the quality and purity of compound. The circuit model fittings were carried out using the impedance data to find the correlation between the response of real system and idealized model electrical circuit. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type and negative temperature coefficient of resistance character. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in $Ba(Nd_{1/2}Nb_{1/2})O_3$. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.31-38
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• 2004

PMN-PT, a piezoelectric single crystal, has many useful applications such as sensors and actuators. In this paper, all the elastic, piezoelectric, and dielectric constants of the PMN-32％PT single crystals were measured by the resonance method. For the rhombohedral symmetry, a total of twelve independent material constants were measured such as six elastic compliance constants at constant electric field, two dielectric constants at constant stress, and four piezoelectric constants d. Seven sets of crystal samples of each different geometry were prepared for the measurement of length-thickness extensional, thickness extensional, radial, length extensional and thickness shear modes of vibration, respectively. In order to check the validity of the measurement, experimental impedance spectrum of the PMN-PT crystal was compared with numerical data spectrum calculated with the measured material constants. The good agreement between the two spectra confirmed validity of the results in this paper.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.914-920
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• 2002

This study investigates the mechanism of a dual mode probe that generates both of the longitudinal and shear waves simultaneously with a single FZT element. Most of conventional ultrasonic probes are constructed to generate either longitudinal or shear waves. After poling, PZT has the hexagonal 6mm crystal symmetry. All possible crystal cuts are checked to determine appropriate Euler transformation angles for efficient excitation of dual modes. For the selected cut, performance of the dual mode element is analyzed through numerical simulation and experiments. Results of the analysis determine the optimal crystal cut for simultaneous generation of P and S waves of equal strength.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.532-538
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• 2016

In this paper, a underwater acoustic Tonpilz transducer with the piezoelectric single crystal(72PMN-28PT) is developed. The thickness and the number of piezoelectric elements are theoretically designed with the equivalent circuit analysis to have the desired resonance frequency. In order to compare the performances, a piezoelectric ceramic transducer is also manufactured and their electrical impedance, TVR (transmitting voltage response), RVS (receiving voltage response) and beam pattern are compared.

• 한국결정성장학회지
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• 제25권6호
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• pp.239-244
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• 2015

에어로졸 증착법에 의해 실리콘 기판위에 $10{\sim}20{\mu}m$의 두께를 가진 PZT 후막을 제조한 후 $700^{\circ}C$에서 어닐링처리하였다. PZT 분말에 의해 제조된 막은 임피던스 분석기(impedance analyzer)와 쇼여-타워 서킷(Sawyer-Tower circuit)으로 분석하였다. PZT 분말은 통상적인 고상반응법 및 솔-젤 법으로 준비되었다. 고상반응법으로 만들어진 분말을 사용한 $10{\mu}m$ 두께 PZT 막의 잔류분극, 항전계 및 유전상수는 각각 $20{\mu}C/cm^2$, 30 kV/cm 그리고 1320이었다. 한편 솔-젤 법으로 제조된 분말을 사용한 경우의 유전상수는 635로 비교적 낮은 값을 나타낸다. 이는 어닐링시 생기는 발생하는 유기물에 의한 기공의 존재 때문이다.

• 한국결정성장학회지
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• 제17권3호
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• pp.102-107
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• 2007

인산염계 유리를 사용하여 PDP 소자의 하판유전체 후막을 제작하였다. 유전체 후막의 제조는 soda-lime glass위에 silk screen printing 법을 사용하였다. 기판과 유전체후막의 열팽창계수를 맞추기 위하여 $TiO_2$와 $Al_2O_3$를 충진제로 사용하였다. 유전체의 결정화 거동은 DTA, XRD를 사용하였으며 광학적 열적 전기적인 특성을 알아보기 위하여 UV-spectrometer, Dilatometer, Impedance Analyser를 사용하였다. 실험결과 주 결정상은 메타인산아연과 피로인산아연으로 나타났다. $TiO_2$의 첨가로 인하여 반사율은 높아졌으나 상대적으로 유전상수는 높아졌다. 또한 $Al_2O_3$를 첨가한 경우 반사율은 크게 변화가 없었으나 유전상수 값은 낮아졌다. 또한 열팽창 계수는 약 $62{\times}10^{-7}/^{\circ}C$ 정도였다.