• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.190-191
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• 2006

We have investigated optical properties of Si/graded-$Si_{1-x}Ge_x$/Si heterostructures grown by reduced pressure chemical vapor deposition. Compared to standard condition using Si(100) substrate and growth temperature of $650^{\circ}C$, Si(111) resulted in low growth rate and high Ge mole fraction. Also samples grown at higher temperatures exhibited increased growth rate and reduced Ge mole fraction. The features regarding both substrate temperature and crystal orientation, representing high incorporation of silicon supplied from gas stream played as a key parameter, illustrate that reaction control were prevailed in this process growth condition. Using secondary ion mass spectroscopy and spectroscopic ellipsometry, microscopic changes in atomic components could be analyzed for Si/graded-$Si_{1-x}Ge_x$/Si heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.7
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• pp.1818-1832
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• 1994

Transport process during solidification of an AI-CU alloy in a vertical annular mold of which inner wall is cooled is numerically simulated. A model which can take account of local density dependence on the solute concentration is established and incorperated in the analysis. Results show that thermally and solutally induced convections are developed in sequence, so that there is little interaction between them. Thermal convection effectively removes the initial superheat from the melt and vanishes as solidification proceeds from the cooling wall. On the other hand, solutal convection which is developed later over the meshy and the pure liquid regions leads to large-scale redistribution of the consituents. The degree of the initial superheating hardly affects overall solidification behavior except the early stage of the process, when the cooling rate is kept constant. Macrosegregation is reduced remarkably with increasing cooling rate, because not only the liquidus interface advances so quickly that time available for the solute transport is not enough, but also the interdendritic flow is strongly damped by rapid crystal growth within the mushy region.

• Korean Journal of Crystallography
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• v.14 no.1
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• pp.35-38
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• 2003

A simple multistep-concentration setting in capillaries was used to control the water-evaporation rate in vapor-diffusion protein crystallization. In the method used, a variety of evaporation rate curves were obtained by using the secondary precipitant solution referred to as “regulatory solution”, which is not directly exposed to the protein solution. The curves were applied to the crystallization of lysozyme as a model protein. The results clearly showed that crystal growth is dependent on the evaporation rate. Especially, the decoupling curves in which precipitant concentration in protein solutions increases to a certain point and then decreases to the equilibrium concentration gave the best crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.66-72
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• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.301-306
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• 2010

The artificial aggregates were fabricated by using the inorganic wastes, dredged soil produced at a dredging work. The input temperature ($800{\sim}1000^{\circ}C$), output temperature ($1100{\sim}1200^{\circ}C$) and heating rate ($5{\sim}10^{\circ}C$/min) in sintering process were controlled to fabricate the aggregates with various value of density and water absorption, and their properties were analyzed as a function of those factors. The specimens sintered at the lower input temperature showed the higher density and the lower water absorption while those with higher input temperature had many pores inside of the aggregates, lower density and higher water absorption. Also increasing the input temperature accelerated the black core phenomenon in the aggregates. The bloating phenomena which the gigantic pores were generated inside the aggregates were improved as increasing the output temperature, but its effect was lower than that of input temperature. It could be realized that the bloating tendency was improved from the results that the density was increased and water absorption was decreased with increasing heating rate from 5 to $10^{\circ}C$/min. It was found that the artificial aggregates of light or heavy weight with various value of density and water absorption could be fabricated by using dredged soils naturally involving gas and fluxing components by controlling the sintering conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.176-181
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• 2003

Rapid densification of a SiC powder with additive 0.5 wt% $B_4$C was conducted by spark plasma sintering (SPS). The unique features of the process are the possibilities of using very fast heating rate and short holding time to obtain fully dense materials. The heating rate and applied pressure were kept to be $100^{\circ}C$/min and 40 MPa, while sintering temperature and soaking time varied to 1800, 1850, 1900 and $1950^{\circ}C$ and 10, 20 and 30 min, respectively. All of the SPS-sintered specimens at $1950^{\circ}C$ reached near-theoretical density. The XRD found that 3C-to-6H transformation at $1850^{\circ}C$. The microstructures of the rapidly densified SiC ceramics consisted of duplex microstructure with ultrafine equiaxed grains under 2 $\mu\textrm{m}$ and elongated grains of 0.5∼2 $\mu\textrm{m}$ wide, length 3∼10 $\mu\textrm{m}$. The biaxial strength increased with the increase of sintering time. Strength of 392.7 MPa was obtained with the fully densified specimen sintered at $1950^{\circ}C$ for 30 min, in agreement with the general tendency that strength increases with decreases pore. On the other hand, the fracture toughness shows the value of 2.17∼2.34 MPa$.$$m^{1/2}$ which might be due to the transgranular fracture mode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.192-202
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• 2019

Physicochemical properties and sintering characteristics of pottery stone (Taebaek, Haenam, Aphae, Haengnam) were evaluated as a raw material for porcelain products. Due to acid leaching procedure, the concentration of iron oxide ($Fe_2O_3$) was decreased to < 1.0 wt%, which affects the whiteness of sintered samples. Mean particle size of acid leached samples is $5.7{\sim}10{\mu}m$ with narrow particle size distribution (PSD), which is lower than that of the pristine ($8{\sim}18{\mu}m$) with broad PSD. According to phase analysis by X-ray diffraction, most of pottery stones (PS) have Quartz phase as a main phase with Pyrophyllite as a second phase, however, Haenam PS shows halloysite phase. The absorption rate was in order of Taebaek (A, B, C)~Aphae (A, B) < Taebaek (Special A) < Haengnam < Haenam, and the samples sintered in reductive atmosphere showed lower absorption rate. This result might be due to the concentration of feldspar contained in PS, working as a flux in sintering process. Comparing the color of the sintered samples, the whiteness of refined PS (Taebaek special A, Haenam, Hangnam) is higher than acid leached PS (Taebaek A/B/C, Aphae A/B). The whiteness (L*) for refined PS is 95~97 %, which is higher than acid leached (82~96 %). This might be due to lower iron oxide concentration of the refined PS (0.11~0.58 %) than those of the acid leached PS (0.41~1.91 %) even though most of iron oxide was removed by acid leaching.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.32-36
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• 2021

This study was investigated in carbon diffusion behavior of laser-carburized TiZrN coating layer and the changes of mechanical properties. The carbon paste was deposited on TiZrN coatings, and the laser was irradiated to carburize into the coatings. The XRD peak corresponding to the (111) plane shifted to a lower angle after the carburization, showing the lattice expansion by doped carbon. The decreased grain size implied the compression by the grain boundary diffusion of carbon. The XPS spectra for the bonding states of carbon was analyzed that carbon was substitute to nitrogen atoms in TiZrN, as carbide, through the thermal energy of laser. In addition, the combination of sp2 and sp3 hybridized bonds represented the formation of an amorphous carbon. The cross-sectional TEM image and the inverse FFT of the TiZrN coating after carburizing were observed as the wavy shape, confirming the amorphous phase located in grain boundaries. After the carburization, the hardness increased from 34.57 GPa to 38.24 GPa, and the friction coefficient decreased by 83 %. In particular, the ratio of hardness and elastic modulus (H/E) which is used as an index of the elastic recovery, increased from 0.11 to 0.15 and the wear rate improved by 65 %.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.96-102
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• 2022

Hydroxyapatite (HAp) was synthesized from calcium hydroxide (Ca(OH)₂) reacting with phosphoric acid (H₃PO₄) in aqueous solution. HAp powders were synthesized from extremely high concentration of precursor solutions over 3 M of Ca(OH)₂ aqueous suspension using modified process parameters such as phosphoric acid (H₃PO₄) pouring rate, aging time and post ball milling process. Regardless of phosphoric acid pouring rate, the DCPD (dicalcium phosphate dihydrate) was formed at room temperature and when heated above 700℃, β-TCP (tricalcium phosphate) was synthesized and the amount reached its maximum at 900℃. When the synthesized powder was sintered at 1150℃, β-TCP, a high temperature impurity phase, remained. The single HAp phase without DCPD was obtained from post ball-milled precipitates followed by 3 day aging. For the ball-milled precipitates even without the aging process, the desired single HAp phase without β-TCP could be obtained by heat treatment above 500℃. The post ball milling process provided a convenient route for HAp synthesis.