• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.141-142
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.9514eV - ($7.24\times10^{-4}$ eV/K)$T^2$/(T + 489 K). After the as-grown $ZnIn_2S_4$ single crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, $V_s$, $Zn_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.278-281
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• 2003

The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.1
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• pp.72-77
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• 2019

The display that provides information to us through the visual sense is a very important information transmission means by intuitively transmitting information, and the liquid crystal display (LCD) is the most widely used information transmission display. In this paper, we studied solvent assisted micromolding as an alternative for the rubbing that is essential to align the liquid crystals in LCD and successfully aligned the liquid crystal molecules by constructing the nanostructures on conventional polyimide alignment layer. When generating the nanostructures on the polyimide film, there was a competitive correlation between the dissolution effect of the polymer by the solvent and the capillary effect of the polyimide molecules into the nanostructures of the mold depending on the process temperature. It was possible to form nanostructures with high step by deriving the optimum temperature. These nanostructures were able to align the liquid crystal molecules uniformly and demonstrated that they could form a desirable pretilt angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.44-49
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• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.