• 한국결정성장학회지
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• 제17권2호
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• pp.63-68
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• 2007

EMI filter와 같은 적층형 세라믹 제조 시 공정 상 많은 문제점이 야기된다. 특히 표면과 계면에서의 crack, camber, delamination 같은 결함이 없는 적층체를 얻기 위해 서로 다른 두 재료의 동시 소성에 의한 수축율 조절이 필수적이다. 본 연구에서는 ferrite의 분체 특성을 통해 varistor/ferrite의 동시소성 거동을 연구하였다. ferrite 분말을 각각 24시간, 48시간, 72시간 분쇄하여 varistor와 ferrite 각각의 슬러리를 제조하고 doctor blade법으로 green sheet를 제조하였다. 슬러리는 분말 55wt(%)에 binder solution 45wt(%)로 혼합하여 제조하였다. Varistor와 ferrite green sheet는 $80 kg/cm^2$로 적층하여 $900^{\circ}C$, $1000^{\circ}C$에서 3시간 소결 하였다. 그 결과 분쇄시간과 소결온도 조절로 결함이 없는 동시 소성된 ferrite/varistor 적층체를 제조 할 수 있었다.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제26권6호
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• pp.557-564
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• 2000

The bone graft materials can be grossly divided into autogenous bone, allogenic bone, xenogenic bone, and alloplastic material. Much care was given to other bone graft materials away from autogenous bone due to its additional operation for harvesting, delayed resorption and limitation of quantity. Demineralized freeze-dried bone(DFDB) and hydroxyapatite are the representatives of bone graft materials. As resorbable hydroxyapatite is developed in these days, the disadvantage of nonresorbability can be overcome. So we planned to study on the strength and the bone formation at the rats calvarial defects of DFDB graft and those of the composite graft with DFDB and resorbable hydroxyapatite. We used the 16 male rats weighting range from 250 to 300 gram bred under the same environment during same period. After we made the 6mm diameter calvarial defect, we filled the DFDB in 8 rats and DFDB and resorbable hydroxyapatite in another 8 rats. We sacrificed them at the postoperative 1 month and 2 months with the periostium observed. As soon as the specimens were delivered, we measured the compressive forces to break the normal calvarial area and the newly formed bone in calvarial defect area using Instron(Model Autograph $S-2000^{(R)}$, Shimadzu, Japan). The rest of the specimens were stained with H&E(Hematoxylin & Eosin) and evaluated with the light microscope. So we got the following results. 1. In every rats, there was no significant difference between the measured forces of normal bone area and those of the bone graft area. 2. In 1 month, the measured forces at DFDB graft group were higher than those of the DFDB and resorbable hydroxyapatite composite graft group(P<0.05). 3. In 2 months, there was no significant differences between the measured forces of DFDB graft group and those of the DFDB and resorbable hydroxyapatite composite graft group. 4. In lightmicroscopic examination, most of the grafted DFDB were transformed into bone in 1 month and a large numbers of hydroxyapatite crystal were observed in DFDB and resorbable hydroxyapatite composite graft group in 1 month. 5. Both group showed no inflammatory reaction in 1 month. And hydroxyapatite crystals had a tight junction without soft tissue invagination when consolidated with newly formed bone. 6. In both groups, newly formed bone showed the partial bone remodeling and the lamellar bone structures and some of reversal lines were observed in 2 months. From the above results, it is suggested that DFDB and resorbable hydroxyapatite composite graft group had a better resistance to compressive force in early stage than DFDB graft group, but there would be no significant difference between two groups after some period. And it is suggested that the early stage of bone formation procedure of DFDB and resorbable hydroxyapatite composite graft group was slight slower than that of DFDB graft group, but there would be no significant difference between two groups after some period.

• 한국재료학회지
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• 제13권6호
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 한국진공학회지
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• 제10권3호
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• pp.335-340
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• 2001

RF마그네트론 스퍼터링법으로 사파이어 기판 위에 Ga을 1 wt% 첨가한 ZnO 박막(GZO)을 기판온도 $550^{\circ}C$에서 성장시켜 다결정 박막을 제조하였다. 이러한 박막은 불충분한 전기적 특성이나 PL(Photoluminescence) 특성을 보이고 있다. 이러한 전하농도, 이동도 그리고 PL특성 등과 같은 전기적 광학적 특성을 향상시키고자 질소분위기하에서 RTA(Rapid Thermal Annealing) 법으로 $800^{\circ}C$와 $900^{\circ}C$에서 각각 3분씩 후열처리 하였다. RTA법으로 후열처리한 GZO박막의 비저항은 $2.6\times10^{-4}\Omega$/cm 였으며 전자농도와 이동도는 각각 $3.9\times10^{20}/\textrm{cm}^3$과 60 $\textrm{cm}^2$/V.s 였다. 이러한 물리적 성질들의 향상은 열처리시 원자 크기가 비슷한 도핑된 Ga 원자들이 일부 휘발되는 Zn 빈자리로 치환하면서 침입자리 보다는 치환자리로의 전이에 기인한 것으로 생각된다.

• Archives of Plastic Surgery
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• 제37권4호
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• pp.340-345
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• 2010

Purpose: Recently, bioceramics have become popular as a substitute graft material for reconstruction of bony defect after trauma or tumor surgery. Among the bioceramic materials, hydroxyapatite (HA) is favored due to its biocompatibility. HA scaffold is composed of the interconnected reticular framework, macropores and micropores. Macropores play an important role in cell migration, nutrients supply and vascular ingrowth. On the other hand, a number of micropores less than $10{\mu}m$ form an irregular surface on HA scaffolds, which prevents the osteoblast from adhering and proliferating on the surface of HA scaffold. Methods: In this study, three different groups were designed for comparison. In the first group (group A), conventional method was used, in which HA pellet was applied without surface pretreatment. The second group (group B) was given a HA pellet that has been coated with crystalline HA solution prior to application. In the third group (group C), the same method was used as the second group, where the pretreated HA pellet was heated ($1250^{\circ}C$, 1 hour) before application. Osteoblast-like cells ($2{\times}10^4$/mL) were scattered onto every pellet, then they were incubated in 5% $CO_2$ incubator at $37^{\circ}C$ for twelve days. During the first three days, osteoblast cells were counted using the hemocytometer daily. ALP activity was measured on the 3, 6, 9 and 12 culture days using the spectrophotometer. Results: Under SEM, group A showed a surface with numerous micropores, and group B revealed more rough crystal surface. Group C revealed a fused crystal appearance and flattened smooth surface. In proliferation and ALP activity of osteoblast cells, group C showed better results compared to group B. Group A which lacks pretreatment of the surface showed less osteoblast proliferation and ALP activity than group C, but showed better results than group B. Conclusion: We found that crystallized HA with heat treatment method enhances the osteoblasts proliferation and differentiation on the surface of HA pellets.

• 한국재료학회지
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• 제15권10호
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.12-17
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• 2007

본 연구에서는 전자빔 증착의 증착률이 MgO 보호막의 특성과 제작된 PDP의 방전 특성에 주는 영향에 대하여 연구, 분석 하였다. MgO 박막을 여러 조건의 증착률로 증착하였고, 이 후 결정 구조, 표면 거칠기, 박막 구조와 같은 특성을 XRD, AFM 등을 사용하여 측정, 평가하였다. 실험 결과와 Paschen law을 통해서 $5\AA/sec$의 증착률에서 이차전자방출이 최대가 되는 것을 확인할 수 있었으며, 동일 조건에서 방전 전압이 가장 작고, 발광 효율은 가장 큰 값을 갖는 것이 확인되었다. 또한 $5\AA/sec$의 (200) 결정 방향과 $F^+$ center 측정값도 가장 높게 측정되었다. XRD와 CL 스펙트럼의 결과를 통하여 이차전자방출계수가 MgO 박막의 분자 결정상의 $F/F^+$ centers구조와 관련 있음을 확인할 수 있었다.

• Design & Manufacturing
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• 제14권2호
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• pp.21-27
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• 2020

Recently, LCD (Liquid Crystal Display) has been replaced by OLDE (Organic Light Emitting Diode) in high resolution display industry. In the process of OLDE production, it inspects defective products by sending a signal using a probe during OLED panel inspection. At this time, the cause of the detection of failure is divided into two. One is the self-defect of the OLED panel and the other is the poor contact occurring in the process of contact between the two. The second case is unknown at the time of testing, which increases the time for retesting. To this end, we made a system that can identify in real time whether the probe is in contact during the inspection. A contact probe unit was designed for the system, and a stage system was implemented. An inspection system was constructed through S / W and circuit configuration for actual inspection. Finally, a system that can check contact and non-contact in real time was constructed.

• 한국가스학회지
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• 제2권4호
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• pp.34-41
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• 1998

순철과 스테인리스강 위에 $A1_2O_3,\;Ta_2O_5$ 및 $ZrO_2$의 산화물을 RF스파터링법으로 피복시켜, 피막과 모재와의 밀착성 평가, 피복강에 대한 부식거동 및 피막결함률에 대하여 고찰을 실시하였다. 미소경도시험에서 밀착성지수 $\chi$를 이용하여 산화물피막의 밀착성을 평가할 수 있었다. 임계부동화전류밀도법은 세라믹피복강재의 결함률을 평가하는데 유용한 수단임을 알 수 있었다.