• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.499-501
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• 2007

We propose a vertical-alignment liquid crystal display with patterned electrodes using a positive dielectric anisotropic liquid crystal. In this structure, the threshold and on-state voltages are reduced compared with previous vertical-alignment configuration with positive liquid crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.107-120
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• 1996

The research activities on the bulk crystal growth presented in the journal of the Korean Association of Crystal Growth from 1991 to 1995 have been reviewed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.547-552
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• 1999

Langasite$(La_{3}Ga_{5}SiO_{14})$ single crystal was successfully grown by Floating Zone (FZ) method and characterized. The growth rate was 1.5 mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. The grown crystal was 12 mm in length and 6 mm in diameter. The grown crystal was dark orange color and it was grown along [001] direction. The composition of grown crystal and the structure were analyzed using XRD and WDS. The electrical properties of grown crystal at various frequencies and temperatures were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.117-126
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• 1991

Silicon single crystal is the most frequently used materials for the semiconductor device fabrication, The crystal growth techniques have been steadily improving for achieving a greater degree of crystal perfection and large ingot size. This report present the advantages, disadvantages and technical problems of the various crystal pulling technique briefly on the economic impact of productivity. Also, future directions of the pulling technique and process including the economical and quantitative aspects are deal with.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.560-566
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• 1997

Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$.

• Journal of Information Display
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• v.3 no.4
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• pp.8-12
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• 2002

We have carried out a simulation study on an e-beam addressed liquid crystal projection display in which the liquid crystal is switched by the electric field of the charge, produced by an electron beam, on the surface of the display. We calculated the electric field produced by the surface charge, the liquid crystal director configuration and the profile of the transmitted light. We studied the factors affecting the resolution of the display and the effect of pretilt angle on the performance of the display. The e-beam addressed liquid crystal projection display potentially has the advantages of high resolution and high brightness.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.161-164
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• 1998

Erbium doped garnet crystals were grown by Czochralski method. Relationshipes between crystal quality and crystal growth factors such as pulling rate, rotation rate and concentration of active ions and sensitizers were investigated. Optimum pulling and rotation rate for high quality Er:YAG crystal were 1 mm/hr and 20 rpm and for Er,Cr:YSGG crystal 2-4 mm/hr and 10 rpm respectively. The size of the crystals grown was up to 20-30 mm in diameters and 95-135 mm in length. Er:YAG crystal grown under the nitrogen atmosphere was pink and transparent and Er,Cr:YSGG under the 98% {{{{ { N}_{ 2} }}}} and 2% {{{{ { O}_{2 } }}}} was dark green and transparent. Under the polarizing microscopic observations with crossed polar, striations and {211} core facets were detected. Spectroscopic properties for Er,Cr:YSGG laser rods with <111> axis, 80 mm in length and 6.3 mm in diameter for medical laser applications of 2.79 ${\mu}$m wavelength were manufactured and then laser oscillation was achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.129-134
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• 2005

A numerical analysis was performed on magnetic field effects of silicon melt motion in Czochralski crystal puller. The turbulent modeling was used to simulate the transport phenomena in 18' single crystal growing process. For small crucible angular velocity, the natural convection is dominant. As the crucible angular velocity is increased, the forced convection is increased and the distribution of temperature profiles is broadened. The cusp magnetic field reduces effectively the natural and forced convection near the crucible and the temperature profiles of the silicon fluids is similar in the case of conduction.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.12
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• pp.1047-1054
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• 2008

In this paper, the molecular dynamics (MD) simulations are performed with single-crystal copper blocks under simple shear and simple tension to investigate the effect of size and crystal orientation. There are many variances to give influences such as deformation path, temperature, specimen size and crystal orientation. Among them, the crystal orientation has a primary influence on the volume averaged stress. The numerical results show that the volume averaged shear stress decreases as the specimen size increases and as the crystal orientation changes from single to octal. Furthermore, the Schmid factor and yield stress for crystal orientation are evaluated by using the MD simulation on the standard triangle of stereographic projection.

• Transactions of Materials Processing
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• v.16 no.4 s.94
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• pp.276-281
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• 2007

The hardening and the constitutive equation based on the crystal plasticity are introduced for the numerical simulation of hemispherical sheet metal forming. For calculating the deformation and the stress of the crystal, Taylor's model of the crystalline aggregate is employed. The hardening is evaluated by using the Taylor factor, the critical resolved shear stress of the slip system, and the sum of the crystallographic shears. During the hemispherical forming process, the texture of the sheet metal is evolved by the plastic deformation of the crystal. By calculating the Euler angles of the BCC sheet, the texture evolution of the sheet is traced during the forming process. Deformation texture of the BCC sheet is represented by using the pole figure. The comparison of the strain distribution and punch force in the hemispherical forming process between the prediction using crystal plasticity and experiment shows the verification of the crystal plasticity-based formulation and the accuracy of the hardening and constitutive equation obtained from the crystal plasticity.