Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Growth of $La_{3}Ga_{5}SiO_{14}$ single crystals by the floating zone method

  • Won Ki Yoon (Department of Inorganic Materials Engineering, Hanyang University) ;
  • Jong Cheol Kim (Ceramic Materials Research Institute, Hanyang University) ;
  • Keun Ho Auh (Ceramic Processing Research Center, Hanyang University)
  • Published : 1999.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

Langasite$(La_{3}Ga_{5}SiO_{14})$ single crystal was successfully grown by Floating Zone (FZ) method and characterized. The growth rate was 1.5 mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. The grown crystal was 12 mm in length and 6 mm in diameter. The grown crystal was dark orange color and it was grown along [001] direction. The composition of grown crystal and the structure were analyzed using XRD and WDS. The electrical properties of grown crystal at various frequencies and temperatures were discussed.

Keywords

References

  1. IEEE International Frequency Control Symposium B. Chai;J.L. Lefaucheur;Y.Y. Ji;H. Qui
  2. IEEE International Frequency Control Symposium M.F. Dubovic;I.A. Andreyev;Yu. S. Shmaly
  3. IEEE International Frequency Control Symposium M. Sato;K. Moroishi;S. Ishigami
  4. IEEE International Frequency Control Symposium S. Laffey;M. Hendrickson;John R. Vig
  5. Journal of the Crystal Growth H. Takeda;K. Shimamura;T. Kohno;T.Fukuda
  6. Physics State Solid v.146 H.J. Eichler;D. Ashkenasi;H. Jian;A.A. Kaminski
  7. Journal of the Crystal Growth v.163 K. Shimamura;H. Takeda;T.Fukuda
  8. IEEE International Frequency Control Symposium I.M. Silvestrova;V.V. Bezdelkin;P.A. Senyusenkov;Yu. V. Pisarevski