• Applied Science and Convergence Technology
• /
• v.25 no.6
• /
• pp.145-148
• /
• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• The Korean Journal of Ceramics
• /
• v.1 no.4
• /
• pp.209-213
• /
• 1995

The electrical conductivity was investigated in two series of alkali aluminosilicate glass melts, $25R_2O(R: Na and K)-xAl2O3-(75-x)SiO_2$ at temperatures ranging from 1000 to 140$0^{\circ}C$. The dependences of conductivity or activation energy on $Al_2O_3/R_2O$ of both series in the molten state showed a same behavior. These results in the molten state were compared with previous studies for sodium alkali aluminosilicate glasses in the molten and solid state, and explained in terms of the binding state: $[-O]-R^+\; and\; [AlO_4]-R^+$.

• Journal of the Korean Ceramic Society
• /
• v.25 no.2
• /
• pp.95-100
• /
• 1988

Single crystals of sapphire were grown from solution by slow cooling method using B2O3 and PbO as flux agents. The morphology of grown crystals was tube, rhombohedral, or hexagonal-plate. It was found that the morphology and the size of grown crystal were highly dependent on the amount of fluxes in the solution, the ratio of B2O3 vs. PbO, and cooling rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.82-83
• /
• 2008

AI doped ZnO (AZO) films, and intentionally Zn added AZO (ZAZO) films were prepared on Corning glass by rf magnetron sputtering, and the electrical, optical, and structural properties of the as-deposited films together with the air annealed films were investigated. The resistivity of the AZO films increased with increasing substrate temperature and having minimum resistivity at $150^{\circ}C$. At the high temperature, the ZAZO films showed improved electrical properties better than the AZO films due.to increase in both the carrier concentration and.the Hall mobility. Upon air annealing at $500^{\circ}C$, the resistivity of both AZO and ZAZO films increased substantially, but the relative amount of degradation was smaller for films deposited at $450^{\circ}C$ than the films deposited at $150^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.817-821
• /
• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Journal of the Korean Magnetics Society
• /
• v.8 no.4
• /
• pp.216-223
• /
• 1998

DC magnetron sputtering 방법에 의해 Corning glass 가판 위에 제작한 buffer/[CoFe/Cu]N 형태의 다층작막에 대하여 자기저항비의 비자성층 Cu두께, 기저층 종류(Fe, Cu, Cr, Ta)와 두께, Ardkqfur, 다층 층수 및 열처리 의존성을 조사하였다. 자기저항비는 비자성층 Cu 두께에 따라 진동하였다. 기저층 Fe 및 Cr의 두께가 60$\AA$이고, 층수 N=15, Ardkqfur 5mTorr에서 극대자기저항비 14%를 보였으며 25$0^{\circ}C$까지의 시료에 대한 열처리는 다층박막의 주기성을 유지한 채 더 큰 결정립을 갖게 하여 자기저항비는 증가하였으나 그 이상의 온도에서는 계면 혼합 및 계면 확산에 의한 감소를 나타내었다. Cr기저층 시료가 Fe 기저층 시료보다 열적안정성이 더 좋은 것을 알 수 있었다.

• Electrical & Electronic Materials
• /
• v.5 no.1
• /
• pp.71-80
• /
• 1992

CdS박막을 5*$10^{-7}$Torr의 초기 진공하에서 CdS source 온도를 800~1100.deg.C로 하고 기판 온도를 100~200.deg.C로 하여 corning 7059 glass 기판위에 0.6~1.2.mu.m의 두께로 진공증착 방법으로 제조하였다. CdS soruce 온도와 기판온도가 증착된 CdS 박막의 미세구조와 결정구조 및 전기적, 광학적 성질에 미치는 영향을 알아 보았다. 기판을 가열하지 않은 경우는 source 온도가 증가할수록 전기비저항과 광투과도가 낮게 나타났다. Source 온도를 1100.deg.C로 고정하였을 경우 기판의 온도에 따라 전기비저항값과 광투과도값은 증가하였으며 optical band gap도 증가하였다. Soruce 온도가 1100.deg.C이고 기판온도가 190.deg.C일때 전기비저항값은 2*$10^{6}$ohm-cm였고 광투과도는 band gap 이상의 파장에서 80% 이상의 값을 가졌다. 증착된 CdS박막의 결정구조는 모두 hexagonal structure를 가지며 source 온도가 낮을수록 기판온도가 높을수록 C축으로 방향성있게 성장하였다.

• 전기의세계
• /
• v.45 no.9
• /
• pp.9-17
• /
• 1996

1970년 미국의 코닝글라스사(Corning Glass Company)에서 광섬유가 최초로 제조된 이래 광섬유는 통신분야에 많은 공헌을 해오고 있다. 1976년 Kinsley, Davies 등에 의해 광섬유를 이용한 전기적 위상변이 효과가 발표된 이후로 광섬유 특성을 이용한 센서연구가 많이 진행되어 왔다. 즉, 광파이버의 실현과 반도체 레이저와 발광 및 수광 다이오드의 성능 향상에 의하여 광파이버 응용 계측 기술이 현저하게 진보하여 그 다양성과 실현성도 두드러지게 증가되었다. 이것은 레이저와 수광소자 등의 광소자의 개발, 마이크로컴퓨터를 비롯한 전자기술의 진보, 또한 최근의 전력 계통과 철강, 석유 화학 등의 각종 공업 플랜트의 대규모화, 고도화에 따른 고품위의 계측 제어시스템에 대한 수용의 증대에 의한 것이다. 이에 따라서 광대역, 저손실, 고절연성, 내잡음성, 안전방폭성 등이 우수한 광파이버를 신경망으로 하는 광파이버 응용 계측 제어 시스템이 공장자동화에 있어서 중요한 역할을 담당하게 될 것이다. 이의 설계와 제어를 위해 가장 중요한 부분은 정보 수집을 하는 센서 즉, 광속도, 회전 각속도 등 많은 종류의 광섬유 센서의 연구 개발이 미국, 일본, 유럽 및 국내의 여러 기관에서도 게속적인 연구가 진행되고 있으며, 부분적으로 서서히 실용화되어 가고 있다[3-4].

• The Korean Journal of Ceramics
• /
• v.2 no.2
• /
• pp.83-88
• /
• 1996

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

• The Korean Journal of Ceramics
• /
• v.6 no.4
• /
• pp.343-347
• /
• 2000

The alkali volatilization of TV screen glass melts with various $K_2$O/R$_2$O mole fraction was investigated by dependence of weight loss on time. The melt conductivity was also determined to evaluate relative alkali diffusion in melts. Based on the results of time dependence and compositional dependence of volatilization combining the results of conductivity, the rate determining process of the volatilization was suggested. From the viewpoint of the production and the application of TV glass it was also discussed a correlation between the dependence of properties on $K_2$O/R$_2$O and the present commercial composition.