• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Geomechanics and Engineering
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• v.21 no.2
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• pp.207-213
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• 2020

Umbrella Arch Method (UAM) often employed in the tunnel construction under poor rock mass conditions in Korea. Insertion of steel pipes at the periphery of the tunnel and infiltration of grouts along the pipes into the rock masses increases tunnel stability. There are two major effects of grouts expected at the tunnel face: 1) increase of face stability by enhancing the frictional resistance of discontinuities and 2) decrease of permeability along the rock masses. Increase of resistance and decrease of permeability requires a certain curing time for the grout. In Korea, we require 24 hours for curing of grout, which means no progress of excavation for 24 hours after infiltration of grouts. This step delays the tunnel construction sequences. To eliminate such inefficiency, we propose MTG (Method for Tunnel construction using Grouting technology), which uses extended length of steel pipes (14 m) compared to conventional pipe roof method (12 m). The merit of MTG is the reduction of curing time. Because of the approximately 2 m extension of the length of steel pipe, blasting can be done after infiltration of grouting. For this paper, we conducted experiments on the shear strength behaviors of grout infilled rock joint with elapsing of curing time and blasting induced vibration. The results show that blasting induced vibration under MTG does not influence the mechanical features of grout material, which indicates no influence on the mechanical behaviors of grout, contributing to the stability of tunnels during excavation. This result indicates that MTG is a cost effective and fast construction method for tunneling in Korea.

• Journal of Magnetics
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• v.18 no.1
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• pp.43-49
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• 2013

A pulsed ferrite magnetic field generator (FMFG) was designed for the use in the 1000 m long through-the-earth (TTE) communication system for mining disaster situations. To miniaturize the TTE system, a ferrite core having 10,000 of permeability was used for the FMFG. Attenuation of the magnetic field intensity from the FMFG (200-turn and 0.18 m diameter) was calculated to be 89.95 dB at 1000 m depth soil having 0.1 S/m of conductivity. This attenuation was lower than 151.13 dB attenuation of 1 kHz electromagnetic wave at the same conditions. Therefore, the magnetic-field was found to be desirable as a signal carrier source for TTE communications as compared to the electromagnetic wave. The designed FMFG generates the magnetic field intensity of $1{\times}10^{-10}$ Tesla at 1000 m depth. This magnetic field is detectable by compact magnetic sensors such as flux gate or magnetic tunneling junction sensor. Therefore, the miniature FMFG TTE communication system can replace the conventional electromagnetic wave carrier type TTE system and allow reliable signal transmission between rescuer and trapped miners.

• Journal of Korean Tunnelling and Underground Space Association
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• v.25 no.3
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• pp.221-243
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• 2023

The use of roadheaders has been increasing to mitigate the problems of noise and vibration during tunneling operations in urban area. Since lack of experience of roadheader for hard rock, the selection of appropriate machines and the evaluation of cutting rates have been challenging. Currently, empirical models developed overseas are commonly used to evaluate cutting rates, but their effectiveness has not been verified for domestic rocks. In this paper, a comprehensive literature review was conducted to assess the rock cutting force, cutterhead capacity, and cutting rate to select the appropriate machine and evaluate its performance. The cutterhead capacity was reviewed based on the literature results for the site. Furthermore, a new empirical model and simplified method for predicting cutting rates were proposed through data analysis in relation to operation time and rock strength, and compared with those of the conventional model from the manufacturer. The results show good agreement for high strength range upper 80 MPa of uniaxial compressive strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.