• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.115.2-115.2
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• 2016

Al alloys are being used widely for automobile, aerospace and mechanical components because of their high strength ratio to weight. However, still they suffer from abrasion or corrosion owing to insufficient resistances to friction or mechanical impact and chemical attack. Plasma electrolytic oxidation (PEO) method is one of the promising surface treatment methods for Al alloys which can render better hardness than aluminum anodic oxide (AAO) films prepared by conventional anodizing method in acidic solutions. In this presentation, some basic nature of PEO film formation and growth process on Al alloys will be presented based on the experimental results obtained and discussed in view of dielectric breakdown and reformation and the role of various anions in film breakdown and reformation of PEO films.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1085-1087
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• 1995

A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.184-184
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• 2009

Lead-free Piezoelectric $[Li_{0.04}(Na_{0.44}K_{0.56})](Nb_{0.88}Ta_{0.1}Sb_{0.02})$ (abbreviated as NKNLTS) has been synthsized by conventional mixed oxide method traditional ceramics process without cold-isostatic pressing. Effect of $Bi_2O_3$ addition on NKNLTS ceramics was investigated. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum Kp value at 0.4wt% $Bi_2O_3$ addition. The results show that the optimum poling condition for NKNLTS ceramics of 3.5kV/mm, poling temperature of $120^{\circ}C$ and poling time of 30min. At the sintering temperature of $1100^{\circ}C$ and the calcination temperature $800^{\circ}C$, the optimal values of density=$4.7g/cm^2$, Kp=0.44, $\varepsilon_r$=1309 were obtained. Consequently, lead free piezoelectric ceramics with the excellent piezoelectric could be fabricated using a conventional mixed oxide process and the optimal manuacturing condition of those was obtained.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.70.1-70.1
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• 2012

In-situ X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectroscopy studies of SOFC cathode materials will be discussed in this presentation. The mixed conducting perovskites (ABO3) containing rare and alkaline earth metals on the A-site and a transition metal on the B-site are commonly used as cathodes for solid oxide fuel cells (SOFC). However, the details of the oxygen reduction reaction are still not clearly understood. The information about the type of adsorbed oxygen species and their concentration is important for a mechanistic understanding of the oxygen incorporation into these cathode materials. XPS has been widely used for the analysis of adsorbed species and surface structure. However, the conventional XPS experiments have the severe drawback to operate at room temperature and with the sample under ultrahigh vacuum (UHV) conditions, which is far from the relevant conditions of SOFC operation. The disadvantages of conventional XPS can be overcome to a large extent with a "high pressure" XPS setup installed at the BESSY II synchrotron. It allows sample depth profiling over 2 nm without sputtering by variation of the excitation energy, and most importantly measurements under a residual gas pressure in the mbar range. It is also well known that the catalytic activity for the oxygen reduction is very sensitive to their electrical conductivity and oxygen nonstoichiometry. Although the electrical conductivity of perovskite oxides has been intensively studied as a function of temperature or oxygen partial pressure (Po2), in-situ measurements of the conductivity of these materials in contact with the electrolyte as a SOFC configuration have little been reported. In order to measure the in-plane conductivity of an electrode film on the electrolyte, a substrate with high resistance is required for excluding the leakage current of the substrate. It is also hardly possible to measure the conductivity of cracked thin film by electrical methods. In this study, we report the electrical conductivity of perovskite $La_{0.6}Sr_{0.4}CoO_{3-{\delta}}$ (LSC) thin films on yttria-stabilized zirconia (YSZ) electrolyte quantitatively obtained by in-situ IR spectroscopy. This method enables a reliable measurement of the electronic conductivity of the electrodes as part of the SOFC configuration regardless of leakage current to the substrate and cracks in the film.

• Journal of The Korean Society of Agricultural Engineers
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• v.60 no.1
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• pp.79-87
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• 2018

Water management impacts both methane ($CH_4$) and nitrous oxide ($N_2O$) emissions from rice paddy fields. Although irrigation is one of the most important methods for reducing $CH_4$ emission in rice production systems it can also $N_2O$ emissions and reduce crop yields. A feasibility study on the system of rice intensification (SRI) methods with respect to irrigation requirements, greenhouse gas (GHG) emissions was conducted for either 2 or 3 years depending on the treatment in Korea. The SRI methods (i.e. SRI and midsummer drainage (MD) with conventional practice (CT)) reduced the irrigation requirement by 49.0 and 22.0 %, respectively. Global warming contribution of GHG to different depending on the type of GHG. Therefore, the emission of $CH_4$ and $N_2O$ shall be converted to Global Warming Potential (GWP). The GHG emission from the conventional practice with midsummer drainage (MD) and the SRI plots, in GWP were reduced by 49.1 and 77.1 %, respectively. Application of SRI water management method could help to improve Korea's water resources and could thus contribute to mitigation of the negative effects of global warming.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.416-421
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• 2017

V-substituted $SrTiO_3$ thermoelectric oxide materials were fabricated by the conventional solid state reaction method. From X-ray diffraction pattern analysis, it can be clearly seen that almost every vanadium atom incorporated into the $SrTiO_3$ provided charge carriers. The electrical conductivity ${\sigma}$, Seebeck coefficient S, and thermal conductivity k were investigated in a high temperature regime above 1000 K. The addition of vanadium significantly reduced the thermal conductivity and enhanced the Seebeck coefficient, as well as the electrical conductivity, thus enhancing the ZT value. A maximum ZT value of 0.084 at 673 K was observed for the sample with 1.0 mole% of vanadium substitution. In this study, the reason for the enhanced thermoelectric properties via vanadium addition was also investigated.

• Advances in nano research
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• v.9 no.1
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• pp.25-32
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• 2020

In this work, we report the use of caffeine as an alternative source of nitrogen to successfully dope graphene (quaternary 400.6 eV and pyridinic at 398 eV according XPS), as well as the growth of silver nanowires (in-situ) in the surface of nitrogen doped graphene (NG) sheets. We used the improved graphene oxide method (IGO), chemical reduction of graphene oxide (GOx), and impregnation with caffeine as source of nitrogen for doping and subsequently, silver nanowires (NW) grow in the surface by the reduction of silver salts in the presence of NG, achieving a numerous of growth of NW in the graphene sheets. As supporting experimental evidence, the samples were analyzed using conventional characterization techniques: SEM-EDX, XRD, FT-IR, micro RAMAN, TEM, and XPS.

• Restorative Dentistry and Endodontics
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• v.9 no.1
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• pp.127-132
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• 1983

The purpose of this study was to examine the sealing ability of the vitapex, when used with gutta-percha cone, as a root canal filling material. Fourty five canals from extracted human maxillary and mandibular teeth were randomly selected and instrumented in a conventional method with k-file. After instrumentation and dry the canal with paper points, the canals were divided into three groups and fifteen canals in each group were filled with the following materials; Vitapex, Vitapex in combination with gutta-percha cone, and Gutta-percha cone and Zinc-oxide Eugenol Cement. All the specimens were immersed in 2% methylenblue dye solution and the depth of dye penetration into the canals were evaluated by macroscope at the intervals of 1 day, 2days and 7days. The following results were obtained; 1. All the materials experimented showed varying degrees of dye penetration. 2. The canals filled with Vitapex and Vitapex in combination with gutta perch a cone revealed sudden increase of dye penetration with time passage compared to the canals obturated with Gutta-percha cone and Zinc-oxide eugenol cement. 3. In the canals filled with Vitapex, the mean dye penetration was 1.6mm at 1day, but the specimen exposed to the dye for 7days showed mean dye penetration of 9.2mm. 4. In the canals obturated with Vitapex and gutta-percha cone, the mean dye penetration was 2mm at 1day, 2.2mm at 2days, and 8mm at 7days.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.831-836
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• 2010

In this paper, Plasma Enhanced Chemical Vapor Deposition (PECVD) $SiO_2$ film properties are modeled using statistical analysis and neural networks. For systemic analysis, Box-Behnken's 3 factor design of experiments (DOE) with response surface method are used. For characterization, deposited film thickness and film stress are considered as film properties and three process input factors including plasma RF power, flow rate of $N_2O$ gas, and flow rate of 5% $SiH_4$ gas contained at $N_2$ gas are considered for modeling. For film thickness characterization, regression based model showed only 0.71% of root mean squared (RMS) error. Also, for film stress model case, both regression model and neural prediction model showed acceptable RMS error. For sensitivity analysis, compare to conventional fixed mid point based analysis, proposed sensitivity analysis for entire range of interest support more process information to optimize process recipes to satisfy specific film characteristic requirements.