• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• 한국전산유체공학회:학술대회논문집
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• 2003.10a
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• pp.213-216
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• 2003

This paper put forward the controlled spin intensity method for the tangentially-fired furnaces to solve the problems existed in the counter-tangential operation. The numerical simulation was used in this paper to discuss some basic principles.

• Korean Journal of Acupuncture
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• v.34 no.4
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• pp.251-264
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• 2017

Objectives : To identify the prevalence and types of spin in randomised controlled trials(RCTs) of obesity with statistically non-significant results for primary outcomes to provide adequate reporting directions. Methods : Spin is specific reporting strategy that could lead the readers to misinterpret the results of RCTs. RCTs on obesity with statistically non-significant primary outcomes published from July 2015 to June 2016 were retrieved from PubMed. All included RCTs were classified into 3 intervention categories. The identification and classification of spin in the included articles was performed by two independent researchers. Results : Among 46 RCTs with statistically non-significant primary outcomes, 32 studies were assessed as having at least one spin in title, abstract or main text. Of these, 9 articles were on complementary and alternative medicine, 7 on western medicine and 16 on dietary supplement and exercise. The frequency of spin among the types of interventions was similar. The most common type of spin was 'focusing on statistical significance within-group comparison' in results section of abstract and main text, and 'focusing only on treatment effectiveness with no consideration of statistical significance' in conclusion section of abstract and main text. Studies where random sequence generation was appropriately done was less likely to have spin. Conclusions : As a majority of obesity RCTs have spin, researchers should pay more attention to adequately interpreting and reporting statistically non-significant results.

• Journal of Magnetics
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• v.14 no.1
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.118-119
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• 2010

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.12-13
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• 2013

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.105-106
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.37-38
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• 2011

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.394-394
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• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.168-169
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• 2003

최근 세계적 주목을 받고 있는 spin FET 소자는 반도체에 주입된 spin 편향된 전자가 gate voltage(V$_{G}$)에 의해 반도체 계면에 유도된 전기장의 영향을 받아, Spin 세차운동을 하는 mechanism(Rashba 효과)이 근간을 이루고 있다. 작은 band gap을 가지는 반도체(narrow gap 반도체)는 작은 유효질량의 전자에 의해서 이러한 Rashba 효과를 크게 할 수 있어서, spin FET 구현을 위한 강력한 후보이며, 요즘 한창 연구되고 있는 주제이기도 하다. Rashba 효과가 저자기장 영역에서의 weak antilocalization효과로 나타남을 이용하여, 본 논문에서는 metal gate가 형성된 HgCdTe FET를 제작하여(FET1 시료, Fig. 1(a)참조), V$_{G}$에 따른 weak localization(WL) 및 weak antilocalization(WAL) 효과를 얻었다. 또한, Rashba 효과에 의한 spin 세차운동을 측정할 수 있는 소자(FET3 시료, Fig.1(b) 참조)를 제작하여 spin FET 구조에 대하여 연구하였다.