• Economic and Environmental Geology
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• v.18 no.1
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• pp.11-22
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• 1985

The Daehwa and Donsan tungsten-molybdenum deposits are composed of numerous fissure-filling veins developed in Precambrian gneiss and Cretaceous granite and quartz porphyry. K-Ar age of biotite in granite and that of muscovite in ore veins are $105{\pm}5\;Ma$ and 88.2~88.6 Ma respectively. Occurrence of ore deposits shows that relevant igneous rock is possibly quartz porphyry rather than above mentioned granite in temporal view point. Vein structure and mineralogy suggest that ore veins were formed by continuous vein filling, not by repeated mineralization. Three distinct depositional stages with decreasing age can be devided on the basis of mineral paragenesis and fluid inclusion studies: Stage I, deposition of oxides and silicates; stage II, deposition of base-metal sulfides and sulfosalts with carbonates; stage III, deposition of barren calcite and fluorite. Tungsten, molybdenum and tin mineralization occurred in stage I.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.28-32
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• 2008

In this paper CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, which is a very attractive method for low-cost and large-area solar cells, and the structural, optical and electrical properties of the films was studied. As the thiourea/$CdAc_2$ mole ratio was increased, the deposition rate of CdS films prepared by CBD was increased due to increasing reaction velocity in solution and the optical bandgap was increased at higher thiourea/$CdAc_2$ mole ratio due to larger grain size and continuous microstructure. The minimum resistivity of the films was at thiourea/$CdAc_2$ mole ratio of 3.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.21-23
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• 2003

MOCVD method is one of promising techniques which can fabricate YBCO coated conductors in a low Price A continuous reel-to-reel MOCVD device using a dispersed solid source was designed and manufactured. YBCO films were deposited on various substrates of metallic silver, (100) MgO and SrTiO3 single crystals. The chemical composition of the metal organic sources was changed to optimize the processing condition associate to the deposition of the stoichiometric Y3a2Cu3O7-y. We report the superconducting transition temperature, surface morphology and chemical composition of the YBCO film surfaces.

• Progress in Superconductivity and Cryogenics
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• v.9 no.4
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• pp.1-6
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• 2007

We describe methods for depositing high temperature superconducting films on textured metal tapes by reactive co-evaporation (RCE). We discuss how RCE can be used to deposit on moving tape in a continuous fashion in a Garching-style process. Results are presented on films deposited by RCE at Los Alamos on IBAD-MgO textured tapes. The performance achieved, attaining over 500A/cm-width in self-field at 75.5 K, is competitive with the best results obtained by other processes for coated conductors. Tape production throughput is critical for the economics of the process and high deposition rates achieved in RCE are attractive for this. We present a detailed cost analysis model for HTS deposition using an RCE Garching process. The results indicate that HTS deposition can cost $<$5/kA{\cdot}m$ in a scaled up manufacturing environment.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.130-137
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• 1995

Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.222-223
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• 2014

전량 수입에 의존하고 있는 고가의 HEV 및 FPC용 압연동박 대체, 대일 무역 역조개선, 전방위 업체 국제 가격 경쟁력 강화 기여.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.158-158
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• 2009

The electrophoretic deposition(EPD) technique with a wide range of novel applications in the processing of advanced ceramic materials and coatings, has recently gained increasing interest both in academic and industrial sector not only because of the high versatility of its use with different materials and their combinations but also because of its cost-effectiveness requiring simple apparatus. Compared to other advanced shaping techniques, the EPD process is very versatile since it can be modified easily for a specific application. For example, deposition can be made on flat, cylinderical or any other shaped substrate with only minor charge in electrode design and positioning[1]. The synthesis of the nano-sized Ce0.2Sm0.8O1.9(SDC)particles prepared by aurea based low temperature hydrothermal process was investigated in this study[2].When we made the SDC nanoparticles, changed the time of synthesis of the SDC. The SDC nanoparticles were characterized with field-emission scanning electron microscope(FESEM), energy dispersive X-ray analysis(EDX), and X-ray diffraction(XRD). And also we researched the results of our investigation on electrophoretic deposition(EPD) of the SDC particles from its suspension in acetone solution onto a non-conducting NiO-SDC substrate. In principle, it is possible to carry out electrophoretic deposition on non-conducting substrates. In this case, the EPD of SDC particles on a NiO-SDC substrate was made possible through the use of a adequately porous substrate. The continuous pores in the substrates, when saturated with the solvent, helped in establishing a "conductive path" between the electrode and the particles in suspension[3-4]. Deposition rate was found to increase its increasing deposition time and voltage. After annealing the samples $1400^{\circ}C$, we observed that deposited substrate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.805-808
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• 2010

In this paper, CdS thin films, which were widey used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, and effects of temperature of reaction solution on the structural properties were investigated. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And ammonium acetate was used as the buffer solution. The reaction velocity was increased with increasing temerature of reaction solution. For temperature <= $85^{\circ}C$, as increasing temperature of solution, deposition rate of CdS films was increased by ion-by-ion reaction in the substrate surface, and the crystallinity of the films was improved. However, for temperature <= $55^{\circ}C$, deposition rate was decreased resulting from smaller Cd2+ ion, and the grain size was decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.262-275
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• 1994

SiC/C functionally gradient materials (FGM) were deposited on the graphite substrate by the chemical vapor deposition method. The best deposition conditions of SiC/C FGM were $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$. Despite of discontinuous input gas ratio change, the FGM of which composition was continuously changed could be obtained and continuous structural change without definite interfaces was confirmed by the SEM observation.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.