Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 4 Issue S1
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- Pages.130-137
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- 1995
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- 1225-8822(pISSN)
SILICON DIOXIDE FILMS FOR INTERMETAL DIELECTRIC APPLICATIONS DEPOSITED BY AN ECR HIGH DENSITY PLASMA SYSTEM
- Denison, D.R. (Lam Research Corporation) ;
- Harshbarger, W.R. (Lam Research Corporation)
- Published : 1995.02.01
Abstract
Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5
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