• 제목/요약/키워드: contamination process

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Tracing surrogate bacteria inoculated on hide through the beef slaughtering process

  • Kim, Seongjoon;Kim, Sukwon;Kim, Sung Kwan;Choi, Kwanghoon;Kim, Jinman;Choe, Nonghoon
    • Korean Journal of Veterinary Research
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    • v.62 no.1
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    • pp.5.1-5.5
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    • 2022
  • Many countries have imposed regulations relating to concerns that hide contamination will affect the cleanliness of abattoirs. However, South Korea has not indicated any clear criteria. The purpose of this study is to use surrogate bacteria to measure the contamination in abattoirs caused by contaminated cattle hides. The swab contact method and plate count method are used. Surrogate bacteria are found in most internal environments after the final process. These surrogates remained on the carcass even after the final washing process. This paper is the first study in South Korea that use surrogate bacteria to analyze contamination levels in abattoirs.

Managing Soil Contamination in the United States: Policy and Practice

  • Small, Matthew C.
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2003.10a
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    • pp.58-69
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    • 2003
  • Soil contamination in the United States is managed using a risk-based decision making process. In other words, we don't ask, 'how much soil contamination can be cleaned up\ulcorner' Instead we ask, 'how much contamination can be safely left in place\ulcorner' The determination of 'safe' levels of contamination is based upon the potential for exposure and the toxicity of the contaminants of concern in soil. Potential for exposure is determined by evaluating potential exposure pathways from source to receptor given current or reasonably anticipated land use. Soil cleanup goals are then calculated for any complete exposure pathways based upon toxicity and the route of exposure. In some cases, institutional or engineering controls are also used to limit the potential for exposure. In order to prevent a continuous degradation of environmental quality, risk-based cleanup approaches must be combined with strong contamination prevention programs. In addition, alternative risk management approaches should be incorporated into an overall risk reduction strategy.erall risk reduction strategy.

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Fabrication Method of High-density and High-uniformity Solder Bump without Copper Cross-contamination in Si-LSI Laboratory (실리콘 실험실에 구리 오염을 방지 할 수 있는 고밀도/고균일의 Solder Bump 형성방법)

  • 김성진;주철원;박성수;백규하;이희태;송민규
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.4
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    • pp.23-29
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    • 2000
  • We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

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Effect of Brush Treatment and Brush Contact Sequence on Cross Contaminated Defects during CMP in-situ Cleaning

  • Kim, Hong Jin
    • Tribology and Lubricants
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    • v.31 no.6
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    • pp.239-244
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    • 2015
  • Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

Prevention of P-i Interface Contamination Using In-situ Plasma Process in Single-chamber VHF-PECVD Process for a-Si:H Solar Cells

  • Han, Seung-Hee;Jeon, Jun-Hong;Choi, Jin-Young;Park, Won-Woong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.204-205
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    • 2011
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

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The application of rapid SIMS analysis for the identification of surface contamination in TFT-LCD manufacturing

  • Liou, Been-Chih;Chou, Yi-Hung;Chen, Chien-Chih;Eccles, John A.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.665-668
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    • 2006
  • Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

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Microbial Contamination Level and Disinfection Effect of Electrolyzed Water in the Production Process of Dried-Laver Pyropia sp. (마른김(Pyropia sp.) 가공 공정에서의 미생물 오염도 및 전기분해수의 처리 효과)

  • Cho, Jong-Lak;Hong, Do-Hee;Kim, Young-Mog;Kim, Hyun-Joong;Kim, Jeong-Mok
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.55 no.5
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    • pp.662-669
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    • 2022
  • The purpose of this study is to test the effects of electrolyzed water treatment on dried-laver Pyropia sp. processing facilities to control microbial contamination. Following the progression of the process to the next step, as well as during the lapse between process operating hours, the contamination level of total viable cell counts (TVC) and total coliform (TC) of laver increased. The TVC increased during the aging step, and after the molding-drying steps were completed, it increased by approximately 2.0 log CFU (colony forming unit)/g. Freshwater used for processing in April had a TVC of 4.31 log CFU/mL, which was more polluted than 2.61 log CFU/mL of seawater. Electrolyzed water was used to treat the sponge used in the laver-molding process, which resulted in a 2 log CFU/mL decrease.The TVC of dried-laver decreased by 1 to 2 log CFU/g when electrolyzed water was applied to the process. In conclusion, application of electrolyzed water in dried-laver processing was shown to be effective in reducing the microbiological contamination of the final product.

Particle Contamination Control in the Cleanroom Production Line using Partition Check Method (클린룸 제조공정에서 공정분할평가법을 이용한 입자오염제어)

  • Lee, Hyeon-Cheol;Park, Jung-Il;Lee, Seong-Hun;Noh, Kwang-Chul;Oh, Myung-Do
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2338-2343
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    • 2007
  • The practical studies on the method of particle contamination control for yield enhancement in the cleanroom were carried out. The method of the contamination control was proposed, which are composed of data collection, data analysis, improvement action, verification, and implement control. The partition check method for data collection and data analysis was used in the cellular phone module production lines. And this method was evaluated by the variation of yield loss between before and after improvement action. In case that the partition check method was applied, the critical process step was selected and yield loss reduction through improvement actions was observed. From these results, it is concluded that the partition check method is effective solution for particle contamination control in the cleanroom production lines.

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The Contamination Characteristics of Insulators with Heights (에자의 설치 높이에 따른 오손 특성)

  • Kang, Yeon-Woog;Kwak, Joo-Sik
    • Proceedings of the KIEE Conference
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    • 2001.07a
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    • pp.470-472
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    • 2001
  • This paper explains the characteristic differences in the process of insulator contamination according to heights. To investigate the contamination characteristics, test insulators are suspended to tower at the heights of 8m, 15m, 33m and 50m. That points stand for distances from insulator to bottom of the 22.9 kV, 154 kV, 345 kV and 765 kV towers, respectively. Generally, the contamination level of transmission lines is determined on the basis of measured value at the height of around 10m due to limitation in measuring. As the contamination level could be affected by the heights and the location of the constructed tower, it is suggested that the measured values should be corrected to minimize errors.

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Evaluation of the Level of microbial Contamination in the Processing Company of Nuroong-ji (누룽지 생산시설에 대한 미생물학적 오염도 평가)

  • Do, Yu-No;Choi, Jeong-Sik;Jung, Yu-Kyung;Park, Ji-Hyun;Roh, Kyong-Hwan;Kim, Sung-Soo;Choi, Shin-Young;Lee, Kyoung-Yun;Han, Eui-Jeong
    • Journal of Food Hygiene and Safety
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    • v.25 no.4
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    • pp.333-340
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    • 2010
  • This study was conducted to evaluate the microbial contamination levels in the processing company of Nuroong-ji. Microbial contamination levels were examined for sanitary indication bacteria such as aerobic plate count, coliforms and fungi, and pathogenic bacteria such as Escherchia coli O157:H7, Salmonella spp., Staphylococcus aureus, and Listeria monocytogenes. Contamination levels were detected differently according to handling materials and purposing work-space. The equipments and raw materials were not seriously contaminated but there were necessary to attend the cross-contamination. A high contamination level was detected at the process where the interference of the employees was relatively higher than the other process. Standardization of the roasting process (l20~$170^{\circ}C$, about 10 min) could be necessary to control the microbial organism effectively on Nuroong-ji manufacturing process. At small/medium size foodstuff manufacturers, it is the most important to improve the recognition level of individual hygiene but also expand a hygiene facility.