• Journal of Korean Society of Water and Wastewater
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• v.17 no.4
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• pp.542-549
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• 2003

In the present study, the feasibility of $UV/H_2O_2$ systems was investigated using low and medium-pressure lamps on biologically treated wastewater effluents for secondary effluent reclamation. Two types of UV lamps were used as the light sources (a 39-W low-pressure mercury lamp and a 350-W medium-pressure mercury lamp). The results from these UV systems showed that the removal of organic compounds could be achieved in the contact time of longer than 30min (i.e., low UV doses). Efficiencies of color removal and disinfection were far better than those of organic matters measured as TOC, DOC and $TCOD_{cr}$. In the low-pressure lamp UV system, it has been found that DOC and color removals were 60.9 and 86.2% with 50mg/L of $H_2O_2$ and contact times of 30 minute, respectively. Whereas, with the medium-pressure lamp UV system, TOC, DOC and color removal were 27.1, 5.6 and 95% with 14.3mg/L of $H_2O_2$ and 14 minute of contact times, respectively. Both systems could be applied for the reclamation of secondary effluent treated with biological treatment processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.147-152
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• 2005

The structural evolution of $Ni(400\;\AA)/Au(400\;\AA)$ films on p-type GaN during thermal oxidation in ai. was investigated by in situ x-ray scattering experiments. These results indicate that Ni layer and Au layer intermix during thermal oxidation. Au-rich solid solutions containing the different amount of Ni atoms are formed during oxidation. The Ni atoms in Au-rich solid solution out-diffuse as the oxidation proceeds resulting in the formation of NiO(111) phase. Despite of the complete oxidation at $650^{\circ}C$, the position of bulk Au(111) diffraction profile indicates that small amount of Wi atoms are still incorporated in the Au phase.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.427-436
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• 2008

The effect of dewpoints on annealing behavior and coating characteristics such as wettability and galvannealing kinetics was studied by annealing 0.3wt%Si - 0.1~0.4wt% Mn added interstitial-free high strength steels(IF-HSS). The 0.3wt%Si-0.1wt%Mn steel exhibited good wettability with molten zinc and galvannealing kinetics after annealing when the dewpoint of $H_2-N_2$ mixed gas was above $-20^{\circ}C$. It is shown that the wettability and galvannealing kinetics are directly related to the coverage of the external(surface) oxide formed by selective oxidation during annealing. At $N_2-15%H_2$ annealing atmosphere, the increase of dewpoint results in a gradual transition from external to internal selective oxidation. The decrease of external oxidation of alloying elements with a concurrent increase of their subsurface enrichment in the substrate, showing a larger surface area that was free of oxide particles, contributed to the improved wettability and galvannealing kinetics. On the other hand, the corresponding wettability and galvannealing kinetics were deteriorated with the dewpoints below $-20^{\circ}C$. The continuous oxide layer of network and/or film type was formed on the steel surface, leading to the poor wettability and galvannealing kinetics. It causes a high contact angle between annealed surface and molten zinc and plays an interrupting role in interdiffusion of Zn and Fe during galvannealing process.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.3
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• pp.335-342
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• 2003

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to from the oxide layer and the characteristics of the oxide layer formation are investigated. AISI 52100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4 ${\mu}{\textrm}{m}$ in coating thickness. AISI 1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in air for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.109-116
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• 2001

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to form the oxide layer and the characteristics of the oxide layer formation are investigated. AIS152100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4um in coating thickness. AISI1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitride environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.245-248
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• 2020

The wettability of silicon carbide (SiC) crystal, which has 6H-SiC and 4H-SiC regions prepared using the physical vapor transport (PVT) method, is quantitatively analyzed using dispensed deionized (DI) water droplets. Regardless of the polytypes in SiC, the average of five contact angle measurements showed a difference of about 6° between the Si-face and C-face. The contact angle on the Si-face (C-face) is measured after the removal of the native oxide using BOE (6:1), and revealed a significant decrease of the contact angle from 74.9° (68.4°) to 47.7° (49.3°) and from 75.8° (70.2°) to 51.6° (49.5°) for the 4H-SiC and 6H-SiC regions, respectively. The contact angle of the Si-face recovered over time during room temperature oxidation in air; in contrast, that of the C-face did not recover to the initial value. This study shows that the contact angle is very sensitive to SiC surface polarity, specific surface conditions, and process time. Contact angle measurements are expected to be a rapid way of determining the surface polarity and wettability of SiC crystals.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.443-448
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• 2008

Contact materials are used in many electrical devices. Ag-Cd alloy has been widely used in electrical part, because Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy isn't being used because of environmental challenges. Currently new research is being done on ($Ag-SnO_2$ and $Ag-SnO_2-In_2O_3$) as an alternative solution to fix any remainly environmental challenges. However $In_2O_3$ is more expensive and Ag-Sn alloy has low wear resistance. According to our research data Zn has a similar physical and chemical property. In this work, so we changed and optimized the Zn oxide to over 4 and added Sn oxide ratio 0.5, 1.0, 1.5wt%. Conclusions from the data recorded from the experiment of $Ag-ZnO-SnO_2$ are as follows.

• Fire Science and Engineering
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• v.18 no.4
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• pp.57-63
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• 2004

We investigated heat properties of connection terminal in residual current protective devices(RCD) according to contact pressure for low voltage appliance. And we analyzed voltage and current waveform and oxide propagation when the poor-contact happened between terminal and wire. When contact pressure between terminal and connection wire was not applied, the heat was generated and an oxide was formed on the surface of the wire. The temperature of the insulation surrounding terminal was ascended sharply by poor-contact, micro-sparks and continuous arc sound happened in interior terminal. When the poor-contact by vibration occurred inner conductor of terminal and wire, an oxide was propagated on contact surface and the temperature was increased at 869℃. Thus, we found that the risk of electrical disaster is high in terminal and connection wire parts.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.