• 한국지반신소재학회논문집
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• 제23권1호
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• pp.1-7
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• 2024

본 연구에서는 지중 내 오염물질(TPH, Phenol)의 확산 방지를 위해 오염 발생시에만 선택적으로 차수성능을 발현하는 차수재를 제조하고자 하였다. 선택적차수재의 구성물질로는 주문진규사, 벤토나이트, 폴리올레핀 엘라스토머, 스필하운드 마린을 사용하였으며, 본 연구에서는 구성물질들의 활용가능성을 평가하기 위해 기초 특성 및 환경유해성을 확인하였으며 오염물질과의 접촉 24시간 후 변화되는 투수특성을 비교하여 차수재로서 사용가능성을 확인하였다. 각 구성물질의 pH는 일반 지하수 pH 범위와 유사하였으며 독성특성 및 유해물질 용출가능성 분석결과 기준치 이하의 함량을 보여 환경유해성은 없다고 판단되었다. 또한 오염물질 접촉 전‧후 투수계수를 비교하였을 때, 접촉 전 α × 10^-3cm/sec 내외의 투수계수가 오염물질과 접촉 이후 α × 10^-6cm/sec로 감소된 결과를 보여 차수재의 비오염 상황에서는 투수성과 오염발생시 차수성능 발현을 확인할 수 있었다.

• 대한전자공학회논문지SD
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• 제39권10호
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• pp.25-34
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• 2002

본 논문에서는 코발트 실리사이드가 형성된 얕은 p+-n과 n+-p 접합의 전류-전압 특성을 분석하여 silicidation에 의해 형성된 Schottky contact 면적을 구하였다. 역방향 바이어스 영역에서는 Poole-Frenkel barrier lowering 효과가 지배적으로 나타나서 Schottky contact 효과를 파악하기가 어려웠다. 그러나 Schottky contact의 형성은 순방향 바이어스 영역에서 n+-p 접합의 전류-전압 (I-V) 동작에 영향을 미치는 것으로 확인되었다. 실리사이드가 형성된 n+-p 다이오드의 누설전류 증가는 실리사이드가 형성될 때 p-substrate또는 depletion area로 코발트가 침투퇴어 Schottky contact을 형성하거나 trap들을 발생시켰기 때문이다. 분석결과 perimeter intensive diode인 경우에는 silicide가 junction area까지 침투하였으며, area intensive junction인 경우에는 silicide가 비록 공핍층이나 p-substrate까지 침투하지는 않았더라도 공핍층 근처까지 침투하여 trap들을 발생시켜 누설전류를 증가시킴을 확인하였다. 반면 p+-n 다이오드의 경우 Schottky contact이발생하지 않았고 따라서 누설전류도 증가하지 않았다. n+-p 다이오드에서 실리사이드에 의해 형성된 Schottky contact 면적은 순방향 바이어스와 역방향 바이어스의 전류 전압특성을 동시에 제시하여 유도할 수 있었고 전체 접합면적의 0.01%보다 작게 분석되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.390-390
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• 2010

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and $1{\times}10^{-12}A$. respectively.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.104-104
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• 2005

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• 한국재료학회지
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• 제3권6호
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• pp.661-667
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• 1993

Conatact barrier metal용 selective W CVD 기술에서 $SiH_4//WF_6$(=R)유량비가 W막의 비저항, contact resistance, 접합주설전류 등의 전기적 특성에 미치는 영향을 $\beta$-W 의 생성에 촛점을 맞추어 조사하였다. R의 증가에 따라 W의 비저항이 증가하는데, 그 주원인은 $\alpha$-W로 부터 $\beta$-W 로의 상변태에 있다. $SiH_{4}$환원에 의한 CVD W에서 생성되는 $\beta$-W 는 산소에 의해서가 아니라 막내에 유입된 Si에 의하여 안정화된다. Si기탄상에 W를 증착할 때에는 R값이 클 경우에 $\beta$-W 가 생성되지만, TiN 기판상에 W를 증착할 때에는 R값이 큰 경우에도 $\beta$-W 가 생성되지 않는 것으로 나타났다. 또한 R이 증가함에 따라 접합누설전류가 증가하는데, 이것은 W-Si계면에 대한 수직방향으로의 Si의 소모뿐만 아니라 수평방향으로의 Si의 소모에도 그 원인이 있는 것으로 보인다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.260-260
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• 2009

In high-efficiency crystalline silicon solar cell, If high-efficiency solar cells are to be commercialized, It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper are applied widely in various electronic manufactures as easily formation is available by plating. Ni is shown to be a suitable barrier to Cu diffusin as well as desirable contact metal to silicon. Nickel monosilicide has been suggested as a suitable silicide due to its lower resistivitym lower sintering temperature and lower layer stress than $TiSi_2$. In this paper, Nickel as a seed layer and diffusion barrier is plated by electroless plating to make nickel monosilicide.

• 대한한의학회지
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• 제28권4호
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• pp.18-26
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• 2007

Objective : To study the effect of the Insamyangyoung-tang(ISYT) extract on the skin barrier function, the skin pH, skin humidity and transepidermal water loss(TEWL) were measured and histological changes were observed in DNCB(2,4-dinitrochloro-benzen)-induced contact dermatitis(CD) hairless mice. Methods : The male hairless mice were divided into three groups. Each group consisted of 15 mice. The normal group which had acetone- olive oil applied. The control group which had intentionally induced CD by DNCB and it was fed normal saline orally. The ISYT group which had intentionally induced CD by DNCB and it was fed ISYT extract orally for 7 days. The three groups were checked 24h, 48h and 72h later after inducing CD, and the skin pH, skin humidity and TEWL were observed. Tissue samples were taken, and damage to the epithelial cell was observed. Statistical analysis was performed by using one way-ANOVA: significance was set at p values less than 5% (p<0.05). Results : ISYTextract efficiently maintained the pH balance, it kept the skin humidity at a normal level, and it inhibited TEWL of the DNCB-induced CD hairless mouse. The damage to the epithelium was decreased and the regeneration power of the skin was increased in the ISYT group. Conclusion : Insamyangyoung-tang has a good effect on the skin barrier function of DNCB induced contact dermatitis hairless mice.