• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

• Progress in Superconductivity and Cryogenics
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• v.15 no.1
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• pp.6-10
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• 2013

We investigate the electrical and thermal transport properties of a sesquicarbide superconductor $La_2C_3$, including electrical resistivity, thermoelectric power, and thermal conductivity. The electrical resistivity exhibits a typical metallic character with a saturation behavior at high temperatures. The thermoelectric power shows a metallic behavior with pronounced phonon-drag effect, comparable with pure metals. The broad peak of the thermal conductivity is observed in the superconducting state, which is rapidly suppressed by magnetic fields. These observations suggest that the electron-phonon scattering is significant in $La_2C_3$, which is relevant with the relatively high-$T_c$ in $La_2C_3$ through strong electron-phonon coupling with low frequency phonon modes.

• Geophysics and Geophysical Exploration
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• v.10 no.4
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• pp.361-368
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• 2007

In this paper, we suggested the relationship between resistivity of coastal groundwater and NaCl equivalent salinity for the quantitative interpretation the results of surface/borehole resistivity and electromagnetic data. 38 groundwater samples having electrical conductivity higher than about 1,000 ${\mu}S/cm$ were analyzed to derive the empirical relationship between groundwater resistivity and NaCl equivalent salinity. We used Schlumberger chart GEN-8 to convert ion concentration from hydrochemical analysis to the equivalent NaCl salinity, and the portable meter to measure the in situ electrical conductivity of groundwater samples. From the hydrochemical analysis, relationship between the groundwater resistivity $(R_w)$ and equivalent NaCl salinity (Eq_NaCl) is expressed as Eq_NaCl=$5935.3551{\times}R_w^{-1.0993}$, and relationship between the groundwater electrical conductivity (EC) and total dissolved solids (TDS) is expressed as TDS=0.721*EC. We believe these relationships are very useful to assess the seawater intrusion in western and southern coastal area.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.92-95
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• 1997

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductivity, diamond-like carbon (DLC) film is a suitable material for the passivation layers. For this purpose, using the PECVD, DLC films were synthesized at room temperature. The adhesion and the hardness of the DLC films deposited on Si an SiO2 substrate were measured. The resistivity of 5.3$\times$$10^8$$\Omega$.cm was measured by automatic spreading resistance probe analysis method. The thermal conductivities of different DLC films were measured and compared with that of phospho silicate glass (PSG) film which is commonly used as passivation layers. The thermal conductivity of DLC film was improved by increasing hydrogen flow rate up to 90 sccm and was better than that of PSG film. The patterning techniques of the DLC film developed using the RIE and the lift-off method to form 5$\mu\textrm{m}$ line. Finally, the thermal characteristics of the power transistor with the DLC film as passiviation layer was analyzed.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Journal of Powder Materials
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• v.17 no.2
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• pp.136-141
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• 2010

Bismuth-telluride based $(Bi_{0.2}Sb_{0.8})_2Te_3$ thermoelectric powders were fabricated by two-step planetary milling process which produces bimodal size distribution ranging $400\;nm\;{\sim}\;2\;{\mu}m$. The powders were reduced in hydrogen atmosphere to minimize oxygen contents which cause degradation of thermoelectric performance by decreasing electrical conductivity. Oxygen contents were decreased from 0.48% to 0.25% by the reduction process. In this study, both the as-synthesized and the reduced powders were consolidated by the spark plasma sintering process at $350^{\circ}C$ for 10 min at the heating rate of $100^{\circ}C/min$ and then their thermoelectric properties were investigated. The sintered samples using the reduced p-type thermoelectric powders show 15% lower specific electrical resistivity ($0.8\;m{\Omega}{\cdot}cm$) than those of the as-synthesized powders while Seebeck coefficient and thermal conductivity do not change a lot. The results confirmed that ZT value of thermoelectric performance at room temperature was improved by 15% due to high electric conductivity caused by the controlled oxygen contents present at bismuth telluride materials.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1529-1535
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• 1994

Electrical conduction mechanisms of RuO2-based thick film resistors were investigated with frequency depandence on AC conductivity. Electrical conduction mechanisms of lower resistivity system (100{{{{ OMEGA }}/sq) sintered at 600~90$0^{\circ}C$ were all metallic conduction mechanism. In case of higher resistivity (10K{{{{ OMEGA }}/sq) system, the electrical conduction mechanisms were very depenent on sintering temperature. When sintering temperature was $600^{\circ}C$, the electrical conduction mechamism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism was changed from ionic to hopping conduction mechanism.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.312-318
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• 2001

The mechanical and electrical properties of Cu-Nb filamentary nanocomposite fabricated by the bundling and drawing process were examined. The strength increased gradually with increasing Nb content while the ductility was insensitive to Nb content. The ratio of yield stresses at 293K and 75K are found to be 치ose to that of Young's moduli in various Cu-Nb nanocomposites, suggesting that athermal obstacles primarily control the strength. The fracture morphologies show ductile fractures irrespective of Nb contents. Secondary cracking along the interfaces between subelemental wires was occasionally observed and the frequency of secondary cracking increased with increasing Nb content. The conductivity and the resistivity ratio decreased with increasing Nb content. The decrease of the conductivity and the resistivity ratio(${\rho}_{293k}$/$\{rho}_{75k}$) can be explained by the increasing contribution of interface scattering.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1916-1918
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• 1999

The electrical conductive mechanism and temperature dependence of electrical resistivity of ${\beta}-SiC+ZrB_2$ composites with $Al_2O_3+Y_2O_3$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity) and follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles.