• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Polymer(Korea)
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• v.28 no.2
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• pp.143-148
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• 2004

${\alpha}$,$\omega$-Hydrogen polyorganosiloxane(HPMDMS) prepolymer was prepared from equilibrium polymerization ofoctamethylcyclotetrasiloxane, 1,3,5-trimethylcyclotrisiloxane, 1,3,5,7-tetravinyl-1,3,5,7-tetramethyl-cyclotetrasiloxane, and 1,1,3,3-tetramethyl disiloxane as an end-blocker in the presence of tetramethylammonium siloxanolate as a catalyst. Polyorganosiloxane modified with dimethylacrylamide(APMDMS) was prepared by hydrosilylation of HPMDMS with dimethylacrylamide in the presence of Pt catalyst, and followed by coordination of metal oxide (APMDMS-MO), such as NiO and FeO, to the amide moieties of the resulting polymer. The chemical structures of HPMDMS and APMDMS were confirmed by FT-IR and $^1$H-NMR analysis. Liquid silicone rubber containing metal oxide composite (LSRMO) was prepared by compounding APMDMS-MO, ${\alpha}$,$\omega$-vinylpolydimethylsiloxane, and a catalyst in a high speed dissolver. The thermal conductivity of LSRMO composite was determined to be 0.29 W/mK, and the volume resistivity exhibited a lower value than that of LSR composite. The mechanical and thermal properties of LSRMO and LSR composite were measured by UTM and TGA.

• Journal of the Korean Geosynthetics Society
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• v.13 no.3
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• pp.1-10
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• 2014

Several types of methods such as resistivity survey, ground penetration radar, etc are used for detection of levee leakage and according to the river design guidelines detection of levee leakage is performed by measuring the hydraulic conductivity of levee soil. But, the former can not verify the leakage point and degree of saturation, the latter is an after treatment method. Movable sensor, which is a high-tech TDR system developed since 2000, can obtain directly the dielectric constant profile covering the whole depth of levee. In this study, laboratory and field model experiments were carried out using movable TDR sensor in order to evaluate the applicability as detection system of levee leakage, As the result, movable TDR system has proven to be 3 times more sensitive to water contents than dry unit weight, and the results conclude that the dielectric constant, water contents and density of the ground proved to have a correlation among them, and the dielectric constant is expected to be a basic data on detection of levee leakage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.175-181
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• 2005

Ingots of rutile single crystals were grown by the skull melting method, and their characteristics were compared in terms of melt-dwelling time for each melt. The method is based on direct inductive heating of an electrically conducted melt by an alternating RF field, and the heating is performed by absorption of RF energy. $TiO_2$ is an insulator at room temperature but its electric conductivity increases elevated temperature. Therefore, titanium metal ring(outside diameter : 6cm, inside diameter : 4cm, thickness 0.2cm) was embedded into $TiO_2$, powder (anatase phase, CERAC, 3N) for initial RF induction heating. Important factors of the skull melting method are electric resistivity of materials at their melting point, working frequency of RF generator and cold crucible size. In this study, electric resitivity of $TiO_2$, $(10^{-2}\~10^{-1}\;{\Omega}{\cdot}m)$ at its melting point was estimated by compairing the electric resitivities of alumina and zirconia. Inner diameter and height of the cold crucible was 11 and 14cm, respectively, which were determined by considering of the Penetration depth $(0.36\~1.13cm)$ and the frequency of RF generator.

• Journal of Institute of Convergence Technology
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• v.8 no.1
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• pp.33-39
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• 2018

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.25-37
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• 2020

In this study, hybridization of graphene oxide and metal was carried out by the functional groups containing oxygen and thermal treatment for reduction in order to enhance the electrical conductivity and magnetic properties of graphene materials. Graphene-metal hybrid materials were synthesized using the oxygen-containing functional groups (-OH, -COOH and so on) on the surface of graphene oxide by replacing them with metal ions via ion exchange method as well as thermal reduction. The metals used in this study were Fe, Ag, Ni, Zn, and Fe/Ag, and it was confirmed that metal particles of uniform size were well dispersed on the graphene surface through SEM, TEM, and EDS. All of the metal particles on the graphene surface had an oxide-crystalline structure. To check the electrical properties, sheet resistance of the rGO-metal hybrid sample was measured on the PET film made by the dip-coating, and the specific resistance was calculated by measuring the thickness of the specimen through SEM. As a result, the specific resistance was in the range of 2.14×10-5 and 3.5×10-3 ohm/cm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

• Resources Recycling
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• v.31 no.4
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• pp.56-65
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• 2022

Copper is one of the non-ferrous metals used in the electrical/electronic manufacturing industries due to its superior properties particularly the high conductivity and less resistivity. The effluent generated from the surface finishing process of these industries contains higher copper content which gets discharged in to water bodies directly or indirectly. This causes severe environmental pollution and also results in loss of an important valuable metal. To overcome this issue, continuous R & D activities are going on across the globe in adsorption area with the purpose of finding an efficient, low cost and ecofriendly adsorbent. In view of the above, present investigation was made to compare the performance of a plant root (Datura root powder) as a bio-adsorbent to that of the synthetic one (Tulsion T-42) for copper adsorption from such effluent. Experiments were carried out in batch studies to optimize parameters such as adsorbent dose, contact time, pH, feed concentration, etc. Results of the batch experiments indicate that 0.2 g of Datura root powder and 0.1 g of Tulsion T-42 showed 95% copper adsorption from an initial feed/solution of 100 ppm Cu at pH 4 in contact time of 15 and 30 min, respectively. Adsorption data for both the adsorbents were fitted well to the Freundlich isotherm. Experimental results were also validated with the kinetic model, which showed that the adsorption of copper followed pseudo-second order rate expression for the both adsorbents. Overall result demonstrates that the bio-adsorbent tested has a potential applicability for metal recovery from the waste solutions/effluents of metal finishing units. In view of the requirements of commercial viability and minimal environmental damage there from, Datura root powder being an effective material for metal uptake, may prove to be a feasible adsorbent for copper recovery after the necessary scale-up studies.