• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Journal of the Korean earth science society
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• v.28 no.1
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• pp.64-74
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• 2007

The marine seismic prospecting using a research vessel in the shallow sea near the coastal area has certain limits according to the water depth and survey environment. Also, for the electrical resistivity survey at seashore area, one may need a specially designed high-voltage source to penetrate the very conductive surface layer. Therefore, we have conducted a feasibility study on the application of magnetotelluric method (MT), a passive geophysical method, on investigating of shallow marine environment geology. Our study involves both theoretical modeling and field survey at the tidal flat area which represent the very shallow marine environment. We have applied the audio-frequency magnetotelluric (AMT) method to the intertidal deposits of Gunhung Bay, west coast of Korea, and analysed the field data both qualitatively and quantitatively to investigate the morphology and sedimentary stratigraphy of the tidal flat. The inversion of AMT data well reveals the upper sedimentary layer of Holocene intertidal sediments having a range of 13-20 m thickness and the erosional patterns at the unconformable contact boundary. However, the AMT inversion results tend to overestimate the depth of basement (30-50 m) when compared with the seismic section (27-33 m). Since MT responses are not significantly sensitive to the resistivity of middle layer or the depth of basement, the AMT inversion result for basement may have to be adjusted using the comparison with other geophysical information like seismic section or logging data if possible. But, the AMT method can be an effective alternative choice for investigating the seashore area to get important basic informations such as the depositional environment of the tidal flat, sea-water intrusion and the basement structure near the sea shore.

• Journal of the Korean earth science society
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• v.28 no.2
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• pp.187-201
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• 2007

The first magnetotelluric (MT) transect across the Korean Peninsula was obtained traversing from the East Sea shoreline to the Yellow Sea shoreline. The MT survey profile was designed perpendicular to the strike of the principal geologic structure of the Korean Peninsula $(N30^{\circ}E)$, so-called 'China direction'. MT data were achieved at 50 sites with spacings of $3{\sim}8km$ along the 240 km survey line. The impedance responses are divided into four subsets reflecting typical geological units: the Kyonggi Massif, the Okchon Belt, the western part of the Kyongsang Basin, and the eastern part of the Kyongsang Basin. In the western part of the Kyongsang Basin, the thickness of the sedimentary layer is estimated to be about 3 km to 8 km and its resistivity is a few hundred ohm-m. A highly conductive layer with a resistivity of 1 to 30 ohm-m was detected beneath the sedimentary layer. The MT data at the Okchon Belt show peculiar responses with phase exceeding $90^{\circ}$. This feature may be explained by an electrically anisotropic structure which is composed of a narrow anisotropic block and an anisotropic layer. The Kyonggi Massif and the eastern part of Kyongsang Basin play a role of window to the deep geoelectrical structure because of the very high resistivity of upper crust. The second layers with highest resistivities in 1-D conductivity models occupy the upper crust with thicknesses of 13 km in the Kyonggi Massif and 18 km in the eastern Kyongsang Basin, respectively.

• Geophysics and Geophysical Exploration
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• v.11 no.2
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• pp.99-108
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• 2008

To extend our detailed knowledge for the Hwasan caldera, we carried out magnetotelluric (MT) survey, which is pretty sensitive to electrical property variation in both horizontal and vertical direction of subsurface, across the Hwasan caldera with the direction of EW. The 2-D inversion results of observed MT data lead to following conclusions. Firstly, the depth of the basin basement inferred by the MT inversion results matches well with that suggested by previous potential studies, but the basement resistivity seems fairly low when compared to that of general case. This feature might be related with the large-scaled, highly conductive layer beneath the Euisung Sub-basin suggested by the previous MT study. Secondly, the high resistivity zones reaching to 4000 $\Omega{\cdot}m$ are imaged around two external ring fault boundaries. These zones are thought of as the response of the rhyolitic dykes intruding along the ring fault, and in the previous gravity data correspond to relatively high density anomalies. Thirdly, low resistivity zone reaching to 200 $\Omega{\cdot}m$ is detected around a depth of 1km beneath the central part of the caldera, which has not been yet reported in korean geophysical literatures. If we take account of the evolution model of the Hwasan caldera, this zone is regarded as the past sedimentary layer that subsided during the period of forming external ring fault system. In addition, the relatively low density anomaly observed in the central part of the caldera may be attributed to this sedimentary layer.

• Geophysics and Geophysical Exploration
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• v.10 no.1
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• pp.89-97
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• 2007

A three-dimensional (3D) magnetotelluric (MT) survey has been carried out to delineate subsurface structures and possible fractures, for development of low-temperature geothermal resources in Pohang, Korea. Quite good quality MT data could be obtained throughout the survey region by locating the remote reference in Kyushu, Japan, which is ${\sim}480\;km$ from the centre of the field site. 3D modelling and inversion are performed taking into account the sea effect in MT measurements near the seashore. The nearby sea in the Pohang area affects MT data at frequencies below $1\;Hz{\sim}0.2\;Hz$, depending on the distance from the seashore. The most severe sea effects were observed in the south-east parts of the survey area, closer to Youngil Bay. 3D inversion with and without the seawater constraint showed very similar results at shallow depths, roughly down to 2 km. At greater depths, however, a strong sea effect seems to form a fictitious conductive structure in ordinary 3D inversion, especially in the south-eastern part of the survey region. Comparison between drilling results and the resistivity profiles from inversions showed that five layered structures can be distinguished the subsurface beneath the target area. They are: (a) semi-consolidated mudstones with resistivity less than $10\;{\Omega}m$, which are ${\sim}300\;m$ thick in the northern part and ${\sim}600\;m$ thick in the southern part of the survey area; (b) occasional occurrence of trachybasalt and lapilli tuff within the mudstone layer has resistivity of a few tens of${\Omega}m$, (c) intrusive rhyolite ${\sim}400\;m$ thick has resistivity of several hundreds of ${\Omega}m$, (d) alternating sandstone and mudstone down to 1.5 km depth shows resistivity of ${\sim}100\;{\Omega}m$, (e) a conductive structure was found at a depth of ${\sim}3\;km$, but more geological and geophysical study should be carried out to identify this structure.

• Economic and Environmental Geology
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• v.30 no.2
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• pp.137-142
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• 1997

At the tailings dam of the disused Brukunga pyrite mine in South Australia, reaction of groundwater with the tailings causes the formation and discharge of sulphuric acid. There is a need to improve remediation efforts by decreasing groundwater flow through the tailings dam. Geophysical methods have been investigated to determine whether they can be used to characterise variations in depth to watertable and map preferred groundwater flow paths. Three methods were used: transient electromagnetic (TEM) soundings, direct current (DC) soundings and profiling, and self potential (SP) profiling. The profiling methods were used to map the areal extent of a given response, while soundings was used to determine the variation in response with depth. The results of the geophysical surveys show that the voltages measured with SP profiling are small and it is hard to determine any preferred channels of groundwater flow from SP data alone. Results obtained from TEM and DC soundings, show that the DC method is useful for determining layer boundaries at shallow depths (less than about 10 m), while the TEM method can resolve deeper structures. Joint use of TEM and DC data gives a more complete and accurate geoelectric section. The TEM and DC measurements have enabled accurate determination of depth to groundwater. For soundings centred at piezometers, this depth is consistent with the measured watertable level in the corresponding piezometer. A map of the watertable level produced from all the TEM and DC soundings at the site shows that the shallowest level is at a depth of about 1 m, and occurs at the southeast of the site, while the deepest watertable level (about 17 m) occurs at the northwest part of the site. The results indicate that a possible source of groundwater occurs at the southeast area of the dam, and the aquifer thickness varies between 6 and 13 m. A map of the variation of resistivity of the aquifer has also been produced from the TEM and DC data. This map shows that the least resistive (i.e., most conductive) section of the aquifer occurs in the northeast of the site, while the most resistive part of the aquifer occurs in the southeast. These results are interpreted to indicate a source of fresh (resistive) groundwater in the southeast of the site, with a possible further source of conductive groundwater in the northeast.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Journal of Korean Society of Forest Science
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• v.78 no.1
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• pp.42-54
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• 1989

These studies were carried out to examine the anatomical, karyological characteristics, the variation of isozymes in needle and the frost damage of tissue for the purpose of investigating the relationships among the three natural Torreya nucifera populations of Cheju-do, Namhae, and Mt. Naejang in Korea. The results obtained can be summed up as follows : 1. The numbers of endodermal cells and inner layer cells of mucilage canal of needle conductive tissue were different in each population. The number of those of Cheju-do population was the largest. 2. In somatic chromosome, Namhae population showed one more secondary constriction. The values of $b^{arm}/a^{arm}$ were the same in all the three populations, but Cheju-do population particularly showed a different minimum value. And the karyotype formulas of each population showed difference. 3. During the meiosis, each population showed no significant difference in the irregular phenomena of chromosome. 4. In isoperoxidase and esterase variations of needle, each population showed its particular number and variation of bands. Cheju-do population showed the largest number and greatest variation of bands. 5. Under the same freeging conditions, the frost damage of Mt. Naejang population was comparatively slight, and Cheju-do population suffered from a greater frost damage than the others.

• Composites Research
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• v.24 no.1
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• pp.45-50
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• 2011

Transparent and conductive carbon nanotube on polyethylene terephthalate (PET) were prepared by dip-coating method for self-sensing multi-functional nanocomposites. The changes in the electrical and optical properties of CNT coating mainly depended on the number of dip-coating, concentration of CNT solution. Consequently, the surface resistance and transmittance of CNT coating were sensitively controlled by the processing parameters. Surface resistance of CNT coating was measured using four-point method, and surface resistance of coated CNT could be better calculated by using the dual configuration method. Optical transmittance of PET film with CNT coating was evaluated using UV spectrum. Surface properties of coated CNT investigated by wettability test via static and dynamic contact angle measurement were consistent with each other. As dip-coating number increased, surface resistance of coated CNT decreased seriously, whereas the transmittance exhibited little lower due to the thicker CNT networks layer. Interfacial microfailure properties were investigated for CNT and indium tin oxide (ITO) coatings on PET substrates by electrical resistance measurement under cyclic loading fatigue test. CNT with high aspect ratio exhibited no change in surface resistance up to 2000 cyclic loading, whereas ITO with brittle nature showed a linear increase of surface resistance up to 1000 cyclic loading and then exhibited the level-off due to reduced electrical contact points based on occurrence of many micro-cracks.