• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2164-2166
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• 2002

This paper present a controller design scheme for time-delay system. The Smith Predictor has been proposed to solve the problem of time-delay. But this structure has a condition that parameters of plant and model have to be matched accurately. Because of this condition, it is not applied broadly in practical industrial process field. In this paper, the 2nd-order model with dead-time is used as plant model of the Smith Predictor and a main controller is designed by using the effect of mismatch between plant and model.

• Journal of the Korean Solar Energy Society
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• v.39 no.6
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• pp.15-25
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• 2019

As the installation of photovoltaic systems increases, fire accidents of PV system grow every year. Most of PV system fires have been reported to be caused by electrical components. The majority of fire accidents occurred in combiner box, which is presumed to be short-circuit accidents due to dustproof and waterproof failures or heat deterioration of blocking diode. For this reason, the blocking diode installation became optional by revised PV combiner regulation. In this paper, according to the revised regulation, reverse current that generated by voltage mismatch was measured and analyzed in PV array without a blocking diode. The factors that cause voltage mismatch in array are assumed to be shaded PV module and short circuit failure of bypass diode. As the result of experiment, there is no reverse current to flow under shading condition in module, but reverse current flows on the failure of bypass diode in module. According to the module's I-V characteristic curve analysis, open voltage was slightly reduced due to operation of bypass diode in shading. However, it showed that open circuit voltage has decreased significantly in the failure of bypass diode. This indicates that the difference in open voltage reduction of voltage mismatch factor causes reverse current to flow.

• MALSORI
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• v.55
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• pp.131-142
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• 2005

A mismatch between the training and the test conditions often causes a drastic decrease in the performance of the speech recognition systems. In this paper, non-linear transformation techniques based on histogram equalization in the acoustic feature space are studied for reducing the mismatched condition. The purpose of histogram equalization(HEQ) is to convert the probability distribution of test speech into the probability distribution of training speech. While conventional histogram equalization methods consider only the probability distribution of a test speech, for noise-corrupted test speech, its probability distribution is also distorted. The transformation function obtained by this distorted probability distribution maybe bring about miss-transformation of feature vectors, and this causes the performance of histogram equalization to decrease. Therefore, this paper proposes a new method of calculating noise-removed probability distribution by using assumption that the CDF of noisy speech feature vectors consists of component of speech feature vectors and component of noise feature vectors, and this compensated probability distribution is used in HEQ process. In the AURORA-2 framework, the proposed method reduced the error rate by over $44\%$ in clean training condition compared to the baseline system. For multi training condition, the proposed methods are also better than the baseline system.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.145-150
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• 2002

It has been well known that ductile fracture of steels is accelerated by triaxial stresses. The characteristics of ductile crack initiation in steels are evaluated quantitatively using two-parameters criterion based on equivalent plastic strain and stress triaxiality. It has been demonstrated by authors using round-bar specimens with circumferential notch in single tension that the critical strain to initiate ductile crack from specimen center depends considerably on stress triaxiality, but surface cracking of notch root is in accordance with constant strain condition. In order to evaluate the stress/strain state in the specimens, especially under dynamic loading, a thermal, elastic-plastic, dynamic finite element (FE) analysis considering the temperature rise due to plastic deformation has been carried out. This study provides the fundamental clarification of the effect of strength mismatching, which can elevate plastic constraint due to heterogeneous plastic straining, loading mode and loading rate on critical condition to initiate ductile crack from notch root using equivalent plastic strain and stress triaxiality based on the two-parameter criterion obtained on homogeneous specimens under static tension. The critical condition to initiate ductile crack from notch root for strength mismatched bend specimens under both static and dynamic loading would be almost the same as that for homogeneous tensile specimens with circumferential sharp notch under static loading.

• Journal of Welding and Joining
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• v.23 no.6
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• pp.87-92
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• 2005

It has been well hewn that ductile fracture of steels is accelerated by triaxial stresses. The characteristics of ductile crack initiation in steels are evaluated quantitatively using a two-parameters criterion based on equivalent plastic strain and stress triaxiality. The present study focuses on the effects of strength mismatch, which can elevate plastic constraint due to heterogeneous plastic straining, on the critical condition for ductile fracture initiation usinga two-parameter criterion. Fracture initiation testing has been conducted under static loading using notched round bar specimens which had different notch locations. This study provides the fundamental clarification of the effect of strength mismatching and effect of notch location on the critical condition to ductile crack initiation from notch root using fuite element method and ultrasonic-mechatronics system. The critical condition of ductile crack initiation from notch root of strength mismatched tensile specimens under static loading appeared to be almost the same as those of homogeneous tensile specimens with circumferential sharp notch specimen. Also, the effect of notch location in mismatched specimens was estimated using finite element(FE) analyses.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.206-212
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• 1996

$In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.35-42
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• 2010

In this study, crosstalk between dominant interconnect pairs in an A/D converter circuit is analyzed in frequency domain and effects of termination conditions on crosstalk are described, based on the practical circuit conditions. An A/D converter circuit is a mixed circuit where both clean and noisy signals coexist such that the circuit probably suffers from distortion by crosstalk. An analog input signal and the reference voltage signal, which dominate the overall conversion performance of the A/D converter circuit, are ready to be distorted by crosstalk and include specific termination conditions, such as non-matching and capacitive termination, respectively. Thus, this study presents the model of crosstalk considering impedance mismatch at both ends and analyzes effects of the practical termination conditions in the analog input and the reference voltage interconnects on crosstalk. A typical circuit configuration of the two interconnects is described and crosstalk including near-end and far-end termination impedances is modeled. Effects of the near-end impedance mismatch in the analog input interconnect and the far-end capacitive termination in the reference voltage interconnect are estimated in the frequency domain by using the model of crosstalk and experiments are performed to confirm the estimated results. Microstrip lines are used as interconnects, involving the increase of loss in high frequencies.

• Genomics & Informatics
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• v.17 no.3
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• pp.28.1-28.9
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• 2019

Bar-code (tag) microarrays of yeast gene-deletion collections facilitate the systematic identification of genes required for growth in any condition of interest. Anti-sense strands of amplified bar-codes hybridize with ~10,000 (5,000 each for up-and down-tags) different kinds of sense-strand probes on an array. In this study, we optimized the hybridization processes of an array for fission yeast. Compared to the first version of the array (11 ㎛, 100K) consisting of three sectors with probe pairs (perfect match and mismatch), the second version (11 ㎛, 48K) could represent ~10,000 up-/ down-tags in quadruplicate along with 1,508 negative controls in quadruplicate and a single set of 1,000 unique negative controls at random dispersed positions without mismatch pairs. For PCR, the optimal annealing temperature (maximizing yield and minimizing extra bands) was 58℃ for both tags. Intriguingly, up-tags required 3× higher amounts of blocking oligonucleotides than down-tags. A 1:1 mix ratio between up- and down-tags was satisfactory. A lower temperature (25℃) was optimal for cultivation instead of a normal temperature (30℃) because of extra temperature-sensitive mutants in a subset of the deletion library. Activation of frozen pooled cells for >1 day showed better resolution of intensity than no activation. A tag intensity analysis showed that tag(s) of 4,316 of the 4,526 strains tested were represented at least once; 3,706 strains were represented by both tags, 4,072 strains by up-tags only, and 3,950 strains by down-tags only. The results indicate that this microarray will be a powerful analytical platform for elucidating currently unknown gene functions.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.5
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• pp.543-548
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• 2014

Multiple-model based speech recognition framework (MMSR) has been known to be very successful in speech recognition. Since it uses multiple hidden Markov modes (HMMs) that corresponds to various noise types and signal-to-noise ratio (SNR) values, the selected acoustic model can have a close match with the test noisy speech. However, since the number of HMM sets is limited in practical use, the acoustic mismatch still remains as a problem. In this study, we experimentally determined the optimal SNR mapping between the test noisy speech and the HMM set to mitigate the mismatch between them. Improved performance was obtained by employing the SNR mapping instead of using the estimated SNR from the test noisy speech. When we applied the proposed method to the MMSR, the experimental results on the Aurora 2 database show that the relative word error rate reduction of 6.3% and 9.4% was achieved compared to a conventional MMSR and multi-condition training (MTR), respectively.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).