• 대한전기학회논문지
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• 제43권3호
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.47-51
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• 2019

The three different polymer compounds were manufactured with the three different fire retardant (silane coated magnesium dihydroxide) contents, 180, 200, 220 phr, for making cable sheath for ship industry. In the research, ethylene-vinylacetate, polyethylene as matrix polymers and ethylene-vinylacetate grafted maleic anhydride as coupling agent were selected for compounding with fire retardant, closslinking agent, plasticizer, and other additives. In the evaluation. ΔT, Mooney viscosity, and tensile strength increased with the content of fire retardant. But it was found that too much fire retardant damaged aging resistance and cold resistance of the polymer compound.

• Current Optics and Photonics
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• 제3권4호
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• pp.336-341
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• 2019

This paper proposes an optical system where the organic compound content in water is determined by using an ultraviolet (UV) LED (280 nm) and photodetector. The results obtained by the proposed prototype LED spectroscopy system, which includes a single photodetector and two parallel sample holders, are calculated by applying partial least square regression; the values are highly correlated with the actual concentrations of potassium hydrogen phthalate solutions, with an adjusted coefficient of determination about 0.996. Moreover, the total organic carbon values derived from the UV-Vis spectrometer of real samples (lake, river and sea water) differed little from those obtained by the LED spectroscopy. We confirm that the fast, sensitive, and compact LED sensor system can be readily configured for real-time monitoring of organic compounds in water.

• 전자통신동향분석
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• 제36권3호
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.1-5
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• 2021

Ultraviolet (UVA)-emissive BaSiO₃:Ce³⁺ phosphor was astonishingly reproducible by vacuum-sintering at a high temperature through a simple solid-state reaction method. It was conveniently formed in BaSiO₃ phases. The compound showed the UVA emission and the UV-VUV excitation due to 5d-4f transitions from Ce³⁺ ions: emission peak at 380 nm with a 56 nm width. Its temperature dependence and vacuum UV excitability were examined for practical application as an excimer discharge lamp, which showed the high thermal stability (80% at 100℃) and the strong VUV excitations at 145 nm and 172 nm.

• 한국표면공학회지
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• 제56권1호
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• pp.77-83
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• 2023

The reliability of leadframe-based semiconductor package depends on the adhesion between metal and epoxy molding compound (EMC). In this study, the Ag surface was electrochemically treated in a solution containing silanes in order to improve the adhesion between Ag and epoxy substrate. After electrochemical treatment, the thin silane layer was deposited on the Ag surface, whereby the peel strength between Ag and epoxy substrate was clearly improved. The improvement of peel strength depended on the functional group of silane, implying the chemical linkage between Ag and epoxy.

• ETRI Journal
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• 제16권4호
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.252-255
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• 2004

Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.149-153
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• 2019

The technology of electronic packaging among semiconductor technologies is evolving as an axis of the market in its own field beyond the simple assembly process of the past. In the field of electronic packaging technology, the packaging of power modules plays an important role for green electric vehicles. In this power module packaging, the thermal reliability is an important factor, and silicon nitride plays an important part of package substrates, Silicon nitride is a compound that is not found in nature and is made by chemical reaction between silicon and nitrogen. In this study, this core material, silicon nitride, was fabricated by reaction bonded silicon nitride. The fabricated silicon nitride was studied for thermo-mechanical properties, and through this, the structure of power module packaging was made using reaction bonded silicon nitride. And the characteristics of stress were evaluated using finite element analysis conditions. Through this, it was confirmed that reaction bonded silicon nitride could replace the silicon nitride as a package substrate.

• 한국표면공학회지
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• 제54권5호
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.