• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.175-182
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• 2000

(A hybrid-type wireless infrared data communication module was fabricated by using the light emitting andabsorption diodes with the one-chip of integrated digital circuits. The light emitting diode with the peak spectrum of 850 nm was made from compound semiconductor material of AIGaAs and shows high speed signal transmission with the delay time of 60 nsec for the light direction angle of 30". The Si PIN photodiode showsthe good absorption rate for the range of wavelength of 450-1050 nm and convex-type epoxy lens was utilized for the spectrum filtering on the visible-range spectrum below 750 nm, The data transmission speed is 115.2 kbps and the fabricated module satisfies on the IrDA 1.0 SIR standard requirements.)ments.)

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.183-186
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• 1990

The lattice mismatch between ZnS and Si is negligible because of its value being 0.39%. In this study, $ZnS/_{(P)}Si$ solar cell were fabricated as a layer of ZnS is epitaxially grown on a silicon substrate by PVD method and its photovoltaic properties were measured and discussed. The heat treatment was done after deposition. As the temperature increased up to a certain value, the film has better perfection in crystal structure and electrical characteristics. Measurments of the change that occur in the ZnS films were made by SEM., X-ray diffraction. The optimal thickness of film showned $0.6{\mu}m$, being measured by SEM. The great improvement of the grain growth ZnS film came out after heat-treatment. The result obtained from the $ZnS/_{(P)}Si$ solar cell as follows:short circuit current; $I_{sc}=54mA/cm^2$,open voltage; $V_{oc}=400mV$, fill factor FF=0.72, conversion efficiency; ${\eta}=15.6%$ under the irradiation of 100 ($mW/cm^2$) focused by solar energy. And these are discussed in comparison with other kinds.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.185-189
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• 2011

$Cu_2ZnSnSe_4$ thin films for solar absorber application were prepared by pulsed laser deposition of a synthesized $Cu_2ZnSnSe_4$ compound target. The film's composition revealed that the deposited films possess an identical composition with the target material. Further film compositional control toward a stoichiometric composition was performed by optimizing substrate temperature, deposition time and target rotational speed. At the optimum condition, X-ray diffraction patterns of films showed that the films demonstrated polycrystalline stannite single phase with a high degree of (112) preferred orientation. The absorption coefficient of $Cu_2ZnSnSe_4$ thin films were above 104 cm.1 with a band gap of 1.45 eV. At an optimum condition, films were identified as a p type semiconductor characteristic with a resistivity as low as $10^{-1}{\Omega}cm$ and a carrier concentration in the order of $10^{17}cm^{-3}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.207-213
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• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.49-51
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• 2006

Ternary chalcopyrite $CuInS_2$ thin film material is very promising for photovoltaic. Power generation because of its excellent optical and semiconductor properties, $CuInS_2$ thin films were performed from S/In/Cu/SLG stacked elemental layer (SEL) method with post annealing treatment. $CuInS_2$ thin films were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated. Analysis of the optical energy band gap of $CuInS_2$ value of l.5eV interior and exterior.

• Journal of Magnetics
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• v.9 no.4
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• pp.125-127
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• 2004

We have grown Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ single crystals using the temperature gradient solidification method. We report on the structural and magnetic propertis of Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ compound semi-conductors. The lattice constants of several percent Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ were slightly smaller than those of the un-doped samples due to the smaller Mn atomic radius ($1.40 {\AA}$) than those of Bi ($1.60 {\AA}$) and Sb ($1.45 {\AA}$). Mn-doped $Bi_2Se_3$ and $Sb_2Se_3$ showed spin glass and paramagnetic properties, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• Journal of Power Electronics
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• v.13 no.6
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• pp.1080-1089
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• 2013

In this paper, the superposition principle of a heat sink temperature rise is verified based on the mathematical model of a plate-fin heat sink with two mounted heat sources. According to this, the distributed coupling thermal impedance matrix for a heat sink with multiple devices is present, and the equations for calculating the device transient junction temperatures are given. Then methods to extract the heat sink thermal impedance matrix and to measure the Epoxy Molding Compound (EMC) surface temperature of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) instead of the junction temperature or device case temperature are proposed. The new thermal impedance model for the power converters in Switched Reluctance Motor (SRM) drivers is implemented in MATLAB/Simulink. The obtained simulation results are validated with experimental results. Compared with the Finite Element Method (FEM) thermal model and the traditional thermal impedance model, the proposed thermal model can provide a high simulation speed with a high accuracy. Finally, the temperature rise distributions of a power converter with two control strategies, the maximum junction temperature rise, the transient temperature rise characteristics, and the thermal coupling effect are discussed.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.