• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.89-93
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• 1999

The properties and effects of the electrodeposited CdTe compound film on the porous silicon. To find ways to achieve good mechanical contact on the nanostructure porous silicon layer while keeping the interface transparent, we tried to electrodeposit a CdTe compound film on the porous silicon surface. The CdTe compound film was fabricated with -2.3V vs. Ag/AgCl potential difference in the electrolyte solution containing 1M of $CdSO_4$and 1 mM of $TeO_4$. X-ray diffraction results confirmed the existence of CdTe compound film on the porous silicon surface. Auger depth profile showed that Cd and Te were uniformly distributed up to a 80 nm distance from the surface. The photoluminescence of the sample with a CdTe compound film was weaker in intensity than that without the film and the maximum wavelength was shifted to the higher energy. These results indicate that the contacting CdTe compound film was infiltrated to the nanostructure of porous silicon.

• KSBB Journal
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• v.18 no.6
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• pp.490-494
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• 2003

For the production of antifungal compound, strain B-1 was used as a strong producing strain among bacteria isolated from various soil samples. The optimum medium for the production of antifungal compound was PDB (potato starch 0.4%, dextrose 2％, pH5.1). The optimum conditions for the production of antifungal compound didn't affect on the carbon and nitrogen sources. The produced compound showed broad antimicrobial activity to the tested strains such as five fungi and four bacteria. The optimum pH and temperature of the production antifungal compound were pH 5.0 and 28$^{\circ}C$, respectively. Ether extrct (1$\mu\textrm{g}$/${\mu}\ell$) of culture broth was confirmed inhibitory zone by the thin layer chromatography and plate assay. The antimicrobial compound was unstabled after heat (121$^{\circ}C$) trsatment. Strain B-1 was mass cultured in a 5-liter tormentor, containing 3 liters of PDB medium at 28$^{\circ}C$, pH 5.0, 120 (pm with aeration (1L/min).

• Journal of Pharmacopuncture
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• v.11 no.3
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• pp.79-91
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• 2008

Objective: The purpose of this study was to investigate the composition for pharmacopunctures of eight principles hydrodistillation layer. Methods: The study was determined the hydrodistillation layer for pharmacopunctures of eight principles by hydrodistillation method. The effective components in hydrodistillation layer for pharmacopunctures of eight principles were extracted with ethyl ether or dichloromethane, and then analyzed by Gas Chromatography/Mass Spectrometry(GC/MS). Results: 1. Analyzed pharmacopunctures of eight principles by GC/MS, a lot of differences according to extraction solvent by each pharmacopunctures of eight principles and specific peak patterns were seen. 2. The main compound in pharmacopunctures of eight principles was a kind of hexaoxacyclohydrocarbon that has long hydrocarbon chain.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.666-666
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• 2013

CIGS solar cell에서 p-type semiconductor역할을 수행하는 Cu(In,Ga)Se로 이루어진 Absorber layer는 4 element multi binary compound로 stoichiometry 측면에서 다양한 형태가 나타나기 때문에 태양전지 효율을 향상시키기 위해 이에 대한 연구가 활발하다. 우리는 E-beam evaporation 방법으로 다양한 조건의 multi layer로 증착된 CIG layer 위에 일정 두께의 Se을 증착하면서 열처리 조건에 따른 Selenization 메커니즘에 대한 연구를 수행하였다. 결과분석을 위해(in-situ High Temperature) XRD, XPS, Micro Raman spectroscopy, FE-SEM, (Nano Indentor, Atomic Force Microscopy) 등을 이용하여 결정구조, 결정화도, Depth profile, Eg (band gap energy) 등을 알아보고 분석결과간의 상관관계를 고찰하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.5
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• pp.927-931
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• 2010

Recently, high luminance and high efficiency were realized in OLED with multilayer structure including emitting materials such as metal-chelate complexes. We synthesized a new luminescent material, namely, [2-(2-hydroxyphenyl)quinoline] (Zn(HPB)q) which has low molecular compound and emitted in yellowish green region. The ionization potential(IP) and electron affinity(EA) of Zn(HPB)q were measured by cyclic-voltammetry(CV). As a result, IP and EA of Zn(HPB)q were calculated 6.8 eV and 3.5 eV, respectively. We fabricated the devices and observed the possibility of Zn(HPB)q as electron transporting layer. We have obtained an improvement of luminance and decrease of turn-on voltage using Zn(HPB)q as electron transporting layer.

• Journal of Welding and Joining
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• v.12 no.3
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• pp.48-55
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• 1994

In this experiment, to find optimum brazing conditions for Cu/Stainless Steel brazing using filler metals of Ag-Cu-Zn-Cd system, first of all spreading ratio was tested on 304 stainless Steel and low carbon steel. And then shear test of brazed joint was executed. As the result of that, the shear strengths of brazed joints were the range of 60-90 MPa. Through microstructure analysis for brazed interface layer, We found as follows. Firstly interface layer increased as time increased. Secondly continuous layer of Ag-Cd compound was observed along the side of stainless steel. Also by means of EDS analysis for fracture surface, ductile fracture was occurred and precipitates on the fracture surface were found to include Cr, Mn, Si in Ag-rich phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.177-179
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• 2011

The purpose of this study is to enhance an adhesion between substrate and Diamond-like Carbon (DLC) film. DLC has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion because of weak bonding between DLC film and the substrate. For improvement adhesion, a layer between DLC film and the substrate was prepared by dual post plasma. DLC film was deposited on nitrided layer by linear ion source. The composed compound layer between substrate and DLC film was investigated by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The synthesized bonding structure of DLC film was analyzed using a micro raman spectrometer. Mechanical properties were measured by nano-indentation. In order to clarify the mechanism for improvement in adhesive strength, it was observed by scratch test.

• Journal of the Korean institute of surface engineering
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• v.13 no.2
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• pp.81-86
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• 1980

The mechanical properties of aluminized steel were investigated after the JIS SB 41 plates were dipped in molten aluminum bath. (1) The growth rate of iron-aluminum alloy layer was fast in early stage of alumizing, and then gradually decreased with increasing time. However, over the time period above 10 minutes the growth of alloy layer did not occur. (2) The constituent of alloy layer formed on the steel surface was identified to be intermetallic compound of $Fe_2\;Al_5$. (3) The ultimate tensile strength and elongation of aluminized steel showed a nearly constant value over all thickness below about 0.15 mm. However, both properties decreased rapidly in showed a nearly constant value over all thickness above about 0.20 mm. (4) In case of aluminized steel with greater thickness, crack was formed below yield point of base metal, which is considered to be attributed to the alloy layer failure.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.89-93
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• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.