• Journal of the Korean institute of surface engineering
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• v.30 no.5
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• pp.347-354
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• 1997

Composite plating is a method of co-depositing fine particles of metallic, non-metallic compound or polymers in the plated layer to improve material properties such as were-resistance, lubrication, or corrosion resistance. Graded Ni-Sic composite coating were produced in this research. Prior to produce Graded Ni-SiC composite coatings, effects of particle size, particle content, pH of electrolyte, temperature, current density, stirring rate on the amount of SiC deposited in the Ni layer were investigated. By manipulating current density and plating time properties of these coating were evaluated by micro-indentation hardness test.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.147-148
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• 2007

The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.156-156
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• 2010

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2$/As only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this esperiment in order to solve that problem by doping-As with Ag layer.

• Journal of Life Science
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• v.9 no.2
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• pp.207-211
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• 1999

Biologically active compounds in Polygonatum sibiricum were extracted using organic solvents as hexane, CHCl$_3$, n-butanol corresponding each component. Compound I was purified from hexane layer and the chemical structure of compound I was characterized using 1H-NMR, 13C-NMR, DEPT135, COSY, HMQC, HMBC spectrum and MS-spectrum. Consequently, the chemical structure of compound I was determined as 9,12-(9E,l2E)-octade cadienoic acid.

• Journal of Life Science
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• v.9 no.2
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• pp.212-215
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• 1999

Biologically active compounds in Polygonatum sibiricum were extracted using organic solvents as hexane, CHC1$_3$, n-butanol corresponding each component. Compound II was purified from hexane layer and the chemical structure of compound II was characterized using IH-nmr, 13C-nmr, DEPT135, COSY, HMQC, HMBC spectrum and MS-spectrum. Consequently, the chemical structure of compound II was determined as 2-Hydroxy-3-(9,12-(9E,12E)-Octadecadienoyloxy) propanoic acid.

• Bulletin of the Korean Chemical Society
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• v.34 no.10
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• pp.2947-2952
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• 2013

Three coordination polymers, [$ML_2(H_2O)_2$] (M = Co (1), Ni (2), Mn (3)), were prepared from metal acetates ($M(CH_3COO)_2{\cdot}4H_2O$) and 3-pyridinepropionic acid ($HL=(3-py)-CH_2CH_2COOH$) by solvent-layer methods. By contrast, a discrete molecular compound, trans-[$Pd(HL)_2Cl_2$] (4), was synthesized by replacing benzonitrile (PhCN) ligands in trans-[$Pd(PhCN)_2Cl_2$] with HL under microwave-heating conditions. Compounds 1-3 have a 2D framework, and compound 4 contains a square-planar Pd metal.

• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.1-10
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• 1990

Metal-Organic Vapor Phase Epitaxy (MOVPE) is an epitaxial process utilizaing ane or more of organometallice as reactnte to grow compound semicond semiconductror layers. MOVPE is basically a cold wall process in which reactants are delivered without reacting with each other to the heated substrate where reactants are thermally decomposed to from compound semiconductors through chemical reaction. Since reactants are delivered as gas phase and the formation of the single crystal compunds depends on the thermal decomposition of the reactants, details of MOVPE relies on the hydrodynamics and pyroltsis and chemical reation of reactants inside on reaction chamber. It has been demonstrated that MOVPE is capable of growing virtually all of the III-V, II-VI and IV-VI compound semiconductrs, fabricating ultrathin epilayers, for ming abrupt hetrointerfaces with monolayer transition width, and is suitable for multi-wafer operation yilding a high throghtput. Overiew of reactror componts and layer, characteristics, and status of MOVPE are discussed.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.21-30
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• 1999

Coating adherance behavior of low carbon steels, produced by POSCO, Korea, was studied in order to study the characteristics of hot rolled galvanized iron(HGI) manufactured without pickling line and the development of its process. Galvanizing experiments were carried out in zinc pot with 0.2wt% Al after hot rolled plates with scale were reduced at $550~750^{\circ}C$ in 10~30% hydrogen gas atmosphere during 60~400seconds. The reduced plates and coated products were examined by SST, XRD, SEM and EPMA on their surfaces and cross sections. Coating layer of HGI manufactured with pickling line was composed of retained scale, Fe-Zn-Al compound, Fe-Zn compound ($\delta_1\;and\;\zeta$ Phase) and pure zinc. It was superior to HGI in coating adhesion. It seems to be due to forming of Fe-Zn-Al compound in interface of matrix and retained porous scale.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.33-35
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• 2006

The interactions between Cu/Sn-Ag-(Cu) and Sn-Ag-(Cu)/Ni interfacial reactions were studied during isothermal aging at $150^{\circ}C$ for up to 1000h using Cu(ENIG)/Sn-3.5Ag-(0.7Cu)/Cu(ENIG) sandwich solder joints. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer formed at the upper Sn-Ag/Cu interface after reflowing, whereas a $(Cu,Ni)_6Sn_5$ IMC layer was observed at the Sn-Ag/ENIG interface. The Cu in the $(Cu,Ni)_6Sn_5$ IMC layer formed on the Ni side was sourced from the dissolution of the opposite Cu metal pad or Cu-Sn IMC layer. When the dissolved Cu arrived at the interface of the Ni pad, the $(Cu,Ni)_6Sn_5$ IMC layer formed on the Ni interface, preventing the Ni pad from reacting with the solder. Although a long isothermal aging treatment was performed at $150^{\circ}C$, no Ni was detected in the Cu-Sn IMC layer formed on the Cu side. Compared to the single Sn-Ag/ENIG solder joint, the formation of the $(Cu,Ni)_6Sn_5$ IMC layer of the Cu/sn-Ag/ENIG sandwich joint effectively retarded the Ni consumption from the electroless Ni-P layer.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.664-670
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• 2011

3-ply Mg/Al/STS clad-metal was fabricated by the roll bonding process. An interfacial reaction layer was formed at the Mg/Al interface at and above $300^{\circ}C$ whereas no interfacial reaction layer was observed up to $400^{\circ}C$. The effect of the interfacial reaction layer on the mechanical and fracture properties in clad metals after heat treatments were investigated The chemical compositions were analyzed at the Mg/Al interface by an Energy dispersive X-ray analysis (EDX). A tension test was performed to examine the interfacial cracking properties. The Mg layer fractured first, causing a sudden drop of the stress and Al/STS layer continued to deform until the final fracture. Periodic cracks and crack propagation was observed at the reaction layer between Mg and Al.