• 공업화학
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• 제7권3호
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• pp.504-510
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• 1996

새로운 상용성 조절 기법인 compositional quenching 공정을 이용하여 LDPE(Low-density polyethylene)/LLDPE(Linear low-density polyethylene) 블렌드를 제조하고, 기존의 mechanical blending과 solution blending 방법으로 제조한 블렌드와 물성 등을 비교 고찰하였다. DSC thermogram에서는 $T_m$ peak와 $T_c$ peak가 세 가지 블렌드 방법에 따라 변하였다. Compositional quenching 공정에 의한 블렌드의 열적 성질은 solution blending에 의한 블렌드와 거의 유사하였으나 mechanical blending에 의한 블렌드와는 서로 다른 경향을 보였다. 이러한 결과는 matrix 내에 분산된 domain 크기에 의한 것으로 생각된다. 인장실험에서는 compositional quenching 공정과 solution blending에 의한 블렌드의 파괴신율이 mechanical blending방법에 의한 것에 비해 상대적으로 컸으며, Young's modulus는 mechanical blending에 의한 결과가 상대적으로 컸다. 또한 compositional quenching 공정과 solution blending에 의한 블렌드의 인장강도가 mechanical blending에 의한 것보다 큰 경향을 보였다.

• Elastomers and Composites
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• 제36권3호
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• pp.177-187
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• 2001

폴리프로필렌(PP)/폴리우레탄(PU) 블렌드를 compositional quenching으로 제조하여 모폴로지, 인장물성, 표면에너지 그리고 열안정성 등을 조사하였다. 블렌드 제조시, 말레인산 무수물이 그라프트된 PP(MPP)와 히드록시에틸 말레이미드가 그라프트된 PP(HPP)를 반응성 상용화제로 도입하였으며, 이들의 생성 및 PU 조성과의 반응을 FT-IR로 확인하였다. Compositional quenching으로 제조한 블렌드는 용융블렌드에 비해 높은 혼화성을 보였으며, 블렌드내의 상용화제의 함량이 증가함에 따라 모폴로지, 인장물성. 표면특성, 그리고 열안정성 등의 물성이 현저하게 향상되었다. 상용화제로 MPP를 도입한 블렌드는 HPP를 도입한 블렌드에 비해, 높은 표면 에너지를 가졌다.

• 대한기계학회논문집B
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• 제30권5호
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2005년도 제31회 KOSCO SYMPOSIUM 논문집
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• 한국재료학회지
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• 제13권10호
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.542-546
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• 2001

Converter slag has some compositional similarities to portland cement. But it has no hydration properties due to it's quite high concentrations of FeO(20-35%), MnO(4-6.5%). So it is needed to reduce the concentrations of iron and manganese of converter slag to use as cement additives by enhancing it's hydration properties. In this study, converter slag was modified it's composition by mixing of silica, alumina and quenched BF slag and reduced in induction furnace and quenched in running water. The hydraulic properties and structures of modified and quenched converter slag are significantly changed depend on the amount and kinds of additives. The addition of alumina up to 10% and BFQ slag up to 20% by weight on converter slag was effective to enhance the hydraulic properties of modified and quenched slag. The addition of reduced and quenched converter slag up to 20% by weight in replacement of portland cement in mixing of concrete mortar were shown higher compressive strength than 100% cement concrete mortar.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.91-91
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• 2008

$SnO_2-B_2O_3-P_2O_5$ system were prepared by melt-quenching technique in the compositional series containing 50, 55 aod 60mol.% of $SnO_2$. A large glass-forming region was found at the phosphate side of the ternary system with homogeneous glasses containing up to 5-25mol.% of $B_2O_3$. For these glasses, thermal expansion coeffient($\alpha$), glass transition temperature(Tg), and glass softening temperature(Ts), were determined. The values a decrease with increasing $B_2O_3$ content, while Tg and Ts increased. The reason for the observed changes is local structure of the glasses. Local structure of the glasses was investigated by Raman and FT-IR measurements, suggesting that the number of bridging oxygens decreased whereas the non-bridging oxygen concentration increased with increasing $SnO_2$ content in the glasses.

• 한국표면공학회지
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• 제52권6호
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• pp.334-341
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• 2019

Organometal halide perovskite materials have attracted much attention in the photovoltaic and light emitting devices due to the compositional flexibility with AMX₃ formula (A is an organic amine cation; M is a metal ion; X is a halogen atom). The addition of homovalent or heterovalent metal cations to the bulk organohalide perovskites has been performed to modify their energy band structure and the relevant optoelectronic properties by ligand-assisted ball milling. Here, we report CH₃NH₃Pb_1-xM_xBr₃ nanocrystals substituted by metallic cations (M is Sn²⁺, In³⁺, Bi³⁺; x = 0, 0.01, 0.02, 0.05, 0.1, 0.2). Photoluminescence and quantum yield was significantly reduced with increasing metallic cations content. These quenching effect could be resulted from the metal cations that behave as a non-radiative recombination center.

• 한국주조공학회지
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• 제27권6호
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• pp.243-249
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• 2007

The effect of Re addition and solidification rate on the directional solidification behavior of Ni-Al model alloy has been investigated. Directional solidification (DS) were carried out using the modified Bridgman furnace with various solidification rates. The solid/liquid interface during directional solidification was preserved by quenching the specimen after the desired volume fraction of original liquid was solidified. The equilibrium partition coefficients of Al and Re Were estimated by measuring the compositions at the quenched solid/liquid interface. Then, the effect of Re addition on the elemental segregation behavior was carefully analyzed. The differential scanning calorimetry results showed that the Re addition results in increased ${\gamma}'$ solvus and freezing range of the alloy. It was also shown that the primary dendrite arm spacing gradually decreases with increasing the Re content, while the secondary dendrite arm spacing appears to be independent on the Re content. The compositional analyses clearly revealed that the segregation of Al increased with increasing the Re content and solidification rate, while that of Re was found to be independent on the solidification rate in the range of $10{\sim}100{\mu}m/s$ due to its sluggish diffusion rate in the Ni solid solution.

• 한국세라믹학회지
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• 제47권2호
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• pp.117-121
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• 2010

$SnO_2-(1-x)P_2O_5-xB_2O_3$ glass system were prepared by melt-quenching technique in the compositional series containing 50, 55 and 60 mol% of $SnO_2$. Local structure of the glasses was investigated by Raman and FT-IR measurements. A large glass-forming region was found at the phosphate side of the ternary system with homogeneous glasses containing up to 5~25 mol% of $B_2O_3$. According as content of $B_2O_3$ increases, theraml expansion coefficient of glass decreased but transition temperature and softening temperature increased. Because these phenomenon changed local structure of glass. According as content of $B_2O_3$ increases, quantity of bridging oxygen increased. Also, according as content of $SnO_2$ increases, confirmed that quantity of non-bridging oxygen increases.