• Title/Summary/Keyword: columnar growth

Search Result 123, Processing Time 0.026 seconds

Growth of Highly (100) Oriented (Na0.5Bi0.5)TiO3 Thin Films on LaNiO3 Electrode (LaNiO3 전극위에 (100)으로 배향된 (Na0.5Bi0.5)TiO3 박막의 성장)

  • Yoo Young-Bae;Park Min-Seok;Son Se-mo;Chung Su-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.19 no.2
    • /
    • pp.176-180
    • /
    • 2006
  • [ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

The Characteristics of 〈112〉-preferred Orientation for Photocatalytic TiO2 Fabricated by CVD (CVD법에 의해 제작된 광촉매 TiO2 〈112〉 우선배향의 특성)

  • Kang, Kyoung-tae;Jhin, Jung-geun;Kang, Pil-kyu;Ro, Dae-ho;Byun, Dong-jin
    • Korean Journal of Materials Research
    • /
    • v.13 no.7
    • /
    • pp.436-441
    • /
    • 2003
  • The characteristics of <112> orientation were studied for the $TiO_2$thin films, which were prepared on the glass by CVD (chemical vapor deposition) at various substrate temperatures. It was confirmed that $TiO_2$ films exhibited <112>-preferred orientation in a specific temperature range. Although $TiO_2$polycrystalline film grown deposited at relatively low temperature showed the growth of random directions, the <112>-preferred orientation was gradually developed with increasing deposition temperature. According to exhibit higher degree of <112>-preferred orientation, $TiO_2$thin film showed porous surface morphology, well-developed columnar structure, and deeper voids resulted from non-aggregation of columns were observed. In addition, transmittance was enhanced. Therefore, the growth of $TiO_2$with <112>-preferred orientation is suitable for glass coating because of predominance of photocatalytic efficiency and transmittance.

Synthetic and characterization of Na-tetrasilicic fluorine mica by skull melting method (스컬용융법에 의한 Na사규소운모 합성 및 특성평가)

  • Seok, Jeong-Won;Choi, Jong-Geon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.19 no.4
    • /
    • pp.190-195
    • /
    • 2009
  • Na-tetrasilicic fluorine mica powders were synthesized by skull melting method. The staring materials having chemical composition of $Mg_3(OH)_2Si_4O_{10}:Na_2SiF_6:SiO_2=8.3:24.8:66.9$ mol% were charged into a cold crucible of 13 cm in diameter and 14cm in height and heated by R.F. generator at working frequency of 2.84 MHz. The materials were maintained for 1hr as a molten state and cooled down in the container. In this study, the specific electric resistance of mica was estimated and the columnar and plate shaped mica were synthesized.

Copper, aluminum based metallization for display applications (표시소자 응용을 위한 copper, aluminum 박막의 성장과 특성)

  • 김형택;배선기
    • Electrical & Electronic Materials
    • /
    • v.8 no.3
    • /
    • pp.340-351
    • /
    • 1995
  • Electrical, physical and optical properties of Aluminum(Al), Copper(Cu) thin films were investigated in order to establish the optimum sputtering parameters in Liquid Crystal Display (LCD) panel applications. DC-magnetron sputtered film on coming 7059 samples were fabricated with variations of deposition power densities, deposition pressures and substrate temperatures. Low resistivity films(AI;2.80 .mu..ohm.-cm, Cu:1.84 .mu..ohm-cm),which lower than the reported values, were obtained under sputtering parameters of power density(250W), substrate temperature(450-530.deg. C) and 5*10$\^$-3/ Torr deposition pressure. Expected columnar growth and stable grain growth of both films was observed through the Scanning Electron Microscope(SEM) micrographs. Dependency of the applicable defect-free film density upon depositon power and temperature was also characterized. Not too noticable variations in X-ray diffraction patterns were remarked under the alterations of sputtering parameters. High optical reflectivities of Al, Cu films, approximately 70-90 %, showed high degree of surface flatness.

  • PDF

Effects of Gas Mixing Ratio on the Properties of Thin Films in the ZnO Synthesis by MOCVD (MOCVD에 의한 ZnO 합성에서 기체혼합비가 박막의 물성에 미치는 영향)

  • SeoMoon, Kyu;Lee, JongIn
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.2
    • /
    • pp.109-113
    • /
    • 2013
  • ZnO thin films were synthesized on Si substrates by MOCVD using diethyl zinc as a precursor. Effects of $O_2$/DEZ gas mixing ratio on the growth rate, surface morphology, preferred orientation, and electrical properties of the ZnO thin films were investigated with SEM, XRD, and Hall measurement. The surface reflectance variations of ZnO thin films were analyzed using laser-photometer apparatus. As the $O_2$/DEZ mixing ratio increased, growth rate and $I_{(002)}/I_{(101)}$ in XRD of ZnO thin films decreased, and the crystal structure was changed from columnar to planar structure. All ZnO films deposited at various CVD conditions exhibited c-axis (002) plane preferred orientation. The electrical properties of ZnO thin films mainly depended on the carrier mobility.

Growth Characteristics of SnO2 Thin Film for Gas Sensor with Annealing Treatment (어닐링처리시킨 SnO2 가스센서의 박막성장특성)

  • Kang, Kae-Myung;Choi, Jong-Un
    • Journal of the Korean institute of surface engineering
    • /
    • v.40 no.6
    • /
    • pp.258-261
    • /
    • 2007
  • Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

Growth of SiC film on SiNx/Si Structure (SiNx/Si 구조를 이용한 SiC 박막성장)

  • Kim, Gwang-Cheol;Park, Chan-Il;Nam, Gi-Seok;Im, Gi-Yeong
    • Korean Journal of Materials Research
    • /
    • v.10 no.4
    • /
    • pp.276-281
    • /
    • 2000
  • Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

  • PDF

Influence of Deposition Temperature on the Film Growth Behavior and Mechanical Properties of Chromium Aluminum Nitride Coatings Prepared by Cathodic Arc Evaporation Technique

  • Heo, Sungbo;Kim, Wang Ryeol
    • Journal of the Korean institute of surface engineering
    • /
    • v.54 no.3
    • /
    • pp.139-143
    • /
    • 2021
  • Cr-Al-N coatings were deposited onto WC-Co substrates using a cathodic arc evaporation (CAE) system. CAE technique is recognized to be a very useful process for hard coatings because it has many advantages such as high packing density and good adhesion to metallic substrates. In this study, the influence of deposition temperature as a key process parameter on film growth behavior and mechanical properties of Cr-Al-N coatings were systematically investigated and correlated with microstructural changes. From various analyses, the Cr-Al-N coatings prepared at deposition temperature of 450℃ in the CAE process showed excellent mechanical properties with higher deposition rate. The Cr-Al-N coatings with deposition temperature around 450℃ exhibited the highest hardness of about 35 GPa and elastic modulus of 442 GPa. The resistance to elastic strain to failure (H/E ratio) and the index of plastic deformation (H3/E2 ratio) were also good values of 0.079 and 0.221 GPa, respectively, at the deposition temperature of 450℃. Based on the XRD, SEM and TEM analyses, the Cr-Al-N coatings exhibited a dense columnar structure with f.c.c. (Cr,Al)N multi-oriented phases in which crystallites showed irregular shapes (50~100nm in size) with many edge dislocations and lattice mismatches.

$CO_2$ Weldability of Zn Coated Steel Sheet(1) - Weld Defects and Its Characteristics in Welds - (아연도금강판의 $CO_2$ 용접특성(1) - 용접부 결함의 종류와 특성 -)

  • 이종봉;안영호;박화순
    • Journal of Welding and Joining
    • /
    • v.18 no.1
    • /
    • pp.91-96
    • /
    • 2000
  • Characteristics of the weld defect, such as a blowhole and a pit in lap-jointed fillet Co₂ welds of Zn-coated steel sheet were studied in order to make clear the sequence of the blowhole formation during welding. Main conclusions obtained are as follows: 1) Blowhole, wormhole and pit were found in fillet welds, although the optimum welding condition of 200A-23V-100cm/min was applied. 2) Zn was only detected at the solidification boundary at the early stage of the blowhole formation. 3) Most of the blowholes was started to form at lap-joint by the Zn vapor. With increasing of the Zn vapor and its pressure, the blowhole was develope to th bed surface until the completion of weld solidification. 4) The behavior of the blowhole in growth was similar to that of the columnar dendrite during welding.

  • PDF

Cytologic Features of Villoglandular Adenocarcinoma of the Uterine Cervix - A Report of Two Cases - (자궁목 융모샘 샘암종의 세포 소견 -2예 보고-)

  • Kim, Bohng-Hee
    • The Korean Journal of Cytopathology
    • /
    • v.17 no.2
    • /
    • pp.136-142
    • /
    • 2006
  • Villoglandular adenocarcinoma of uterine cervix has recently been described, and is characterized by good prognosis and occurrence in young women, except a small number of cases. Morphologically, it exclusively shows villoglandular growth and mild to moderate nuclear atypia, the cytologic diagnoses have been frequently missed due to interpretation error. We report here on the cytologic findings of two cases, and both cases were not diagnosed as adenocarcinoma before punch biopsy. One of these cases showed previously described characteristic features such as high cellularity and large tissue fragments with long villous fronds lined by columnar cell with mild nuclear atypia. The other showed moderate cellularity of somewhat smaller clusters without long villous structures. The clusters showed marked nuclear overlapping and the nuclei showed distinct moderate atypia with hyperchromasia and coarse chromatin pattern. The nucleoli were indistinct. Recognition of these features will be helpful to avoid underdiagnosis as a benign lesion, although diagnosis is still difficult in a portion of the cases.