• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.153-155
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• 2009

In this study, we fabricated the $Cu(In,Ga)Se_2$ (CIGS) thin-film solar cells by using a polyimide substrate. The CIGS thin-film was deposited on Mo coated polyimide substrate by a 3-stage co-evaporation technique. Because the polyimide shows thermal transformation at about $400^{\circ}C$, the substrate temperature of co-evaporation process was set to below $400^{\circ}C$. Corresponding solar cell showed a conversion efficiency of 7.08 % with $V_{OC}$ of 0.58 V, $J_{SC}$ of 24.99 $mA/cm^2$ and FF of 0.49.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.952-953
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• 2007

In the present study, we propose MC simulation that takes interface phenomena between liquid crystal and substrate into consideration. We use rigid model molecules of liquid crystal and substrate. Interface is generated using potential field that induces decomposition of molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.398-401
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• 1999

We prepared diamond thin films on WC-Co substrate in a mixtured $H_2-CH_4-O_2$, gas, using 13.%MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Rarnan spectroscopy were used to analyze the characteristics of thin film, and tribometer of ball-on-disk type were used to test the wear resistance between thin film and substrate. The good diamond quality and wear resistance was appeared with cemented tungsten carbide substrate treated with oxygen plasma.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.275-277
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• 2004

This paper presents design and fabrication of micromachined accelerometer using $100{\mu}m$ thick SiOG substrate. The proposed accelerometer has a resonant frequency, 6kHz. To reduce the off-axis sensitivity of the accelerometer, the mode characteristic of the accelerometer is investigated using ANSYs modal analysis. Because the accelerometer is fabricated using an SiOG substrate, it is expected to be integrated as one-chip IMU sensor with a gyroscope using an SiOG substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.46-46
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• 1988

Structural and magnetic properties of Co-Cr-Mo films were investigated in connection with sputtering conditions. Films were prepared using a convention RF sputtering system. X-ray diffractometry, scanning electron microscopy and transmission electron microscopy were employed to investigate structure properties. Vibrating sample magnetometry was used for coercivity and saturation magnetization measurements. Co-Cr-Mo films displayed reasonable values of perpendicular coercivity and saturation magnetization for perpendicular recording media and showed good perpendicular orientation of the hcp c-axis to the film surface. Perpendicular coercivity was strongly dependent upon substrate technique showed better c-axis orientation than hose using the stationary substrate. Co-Cr-Mo films of 2.9 at. % Mo content showed maximum perpendicular coercivity and saturation magnetization. The films deposited at lower Ar pressure showed good magnetic properties. There was no explicit relationship between the columnar structure and c-axis orientation. Co-Cr-Mo films was found to have suitable structural and magnetic properties for perpendicular recording media.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2273-2279
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• 2012

This research is based on fabricating Cu(In,Ga)$Se_2$ thin-film by co-evaporation method. On $1^{st}$ - stage, $In_2Se_3$ phase appeared when the substrate temperature reached to $400^{\circ}C$, however, there was small effect between the substrate temperature and absorbency spectrum on $2^{nd}$, $3^{rd}$ - stage because the average thickness of the thin-film was $1{\mu}m$ or higher. SEM and XRD was measured on $2^{nd}$ and $3^{rd}$ stage and it showed as the substrate temperature increases, the density of the crystal structure increased with the decreament of the vacancy. Furthermore, the formation of Cu(In0.7Ga0.3)$Se_2$ phase showed at $480^{\circ}C$ and $500^{\circ}C$.

• Journal of Microbiology and Biotechnology
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• v.23 no.3
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• pp.343-350
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• 2013

(R)-[3,5-Bis(trifluoromethyl)phenyl] ethanol is a key chiral intermediate for the synthesis of aprepitant. In this paper, an efficient synthetic process for (R)-[3,5- bis(trifluoromethyl)phenyl] ethanol was developed via the asymmetric reduction of 3,5-bis(trifluoromethyl) acetophenone, catalyzed by Leifsonia xyli CCTCC M 2010241 cells using isopropanol as the co-substrate for cofactor recycling. Firstly, the substrate and product solubility and cell membrane permeability of biocatalysts were evaluated with different co-substrate additions into the reaction system, in which isopropanol manifested as the best hydrogen donor of coupled NADH regeneration during the bioreduction of 3,5-bis(trifluoromethyl) acetophenone. Subsequently, the optimization of parameters for the bioreduction were undertaken to improve the effectiveness of the process. The determined efficient reaction system contained 200mM of 3,5-bis(trifluoromethyl) acetophenone, 20% (v/v) of isopropanol, and 300 g/l of wet cells. The bioreduction was executed at $30^{\circ}C$ and 200 rpm for 30 h, and 91.8% of product yield with 99.9% of enantiometric excess (e.e.) was obtained. The established bioreduction reaction system could tolerate higher substrate concentrations of 3,5- bis(trifluoromethyl) acetophenone, and afforded a satisfactory yield and excellent product e.e. for the desired (R)-chiral alcohol, thus providing an alternative to the chemical synthesis of (R)-[3,5-bis(trifluoromethyl)phenyl] ethanol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.15-19
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• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.