• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 센서학회지
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• 제19권5호
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• pp.356-360
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• 2010

Due to the high surface-to-volume ratio, the 3-dimensional(3D) nanostructures of metal oxides are regarded as the best candidate materials for the chemical gas sensors. Here we have synthesised flower-like 3D zinc oxide nanostructures through a simple hydrothermal route. Specific surface area of the 3D zinc oxide nanostructures synthesised in different pH values from 9.0 to 12.0 were evaluated by using a BET analyzer and the results were compared with that of a zinc oxide thin film fabricated by rf sputtering. Using interdigitated electrodes, superior CO gas sensing properties of the 3D zinc oxide nanostructures on the ZnO thin film to those of the ZnO thin film were demonstrated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.91-92
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• 2007

In-Sn-Zn-O (ISZO)박막과 In-Zn-Sn-O (IZSO)박막은 상온에서 2개의 캐소드 (DC, RF)를 이용하여 마그네트론 2원 동시 방전법에 의해 polyethylene terephthalate (PET)기판 위에 실온에서 증착되었다. ISZO 박막의 경우, Zn함량이 증가함에 따라 비저항은 증가하였지만, Zn원자의 도입에 의해 표면 조도는 개선되었다. 반면, IZSO 박막의 경우, 최저비저항 ($3.17$ ${\times}$ $10^{-4}$ ${\Omega}cm$)은 $SnO_2$ 타켓의 RF power 40W에서 얻어졌지만, Sn원자의 도입에 의해 표면 조도는 거칠어졌다. XRD 측정 결과 모든 박막은 비정질 구조로 사료되고, 가시광선 영역에서 80% 이상의 높은 투과율을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.58-61
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• 2005

In an effort to improve the electrical properties of ZnO:Al transparent electrode films, post-annealing treatment in hydrogen atmosphere was attempted with varying annealing time at 573 K for compatibility with typical display device fabrication processes. It was observed that carrier concentrations and mobilities increased with longer annealing time with small changes in crystallinity. This resulted in substantial decrease in resistivity from $4.80{\times}10^{-3}$ to $8.30{\times}10^{-4}{\Omega}cm$ due to increased carrier concentration. Such improvements in electrical properties are attributed to the passivation of the grain boundary surfaces. The optical properties of the films, which changed in accordance with the Burstein-Moss effect, were consistent with the observed changes in electrical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.337-338
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• 2006

The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.587-588
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.122-124
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• 2006

Ta-Mo를 co-sputtering으로 증착하여 MOS-C(Capacitor)를 제작하였다. 열적 화학적 안정성을 판별하기 위해 $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ 에서 급속 열처리를 행하였고, C-V 측정으로 얻은 데이터로 평탄 전압, 일함수, EOT값을 계산 하였다. I-V 측정으로 누설 전류 특성을 파악 하였다. 위의 실험 데이터를 종합하여 폴리 실리콘 게이트를 대체할 차세대 게이트 물질로써 Ta-Mo 게이트 물질을 제안하였다.

• 한국재료학회지
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• 제15권11호
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• pp.730-734
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• 2005

Cr-Al-Si-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating and DC magnet :on sputtering technique in $N_2/Ar$ mixture. The Cr-tll-Si-N coatings were synthesized with different Si contents. Their microstructure and mechanical properties were systematically investigated. The average size of crystallites largely decreases with the increase of Si content compared with Cr-Al-N. The microhardness of Cr-Al-Si-N coatings largely increases from 24 to 55 GPa. The enhanced hardness is believed to originate from the microstructural change by the fine composite microstructure of Cr-Al-N coatings with Si addition. The average friction coefficient of Cr-Al-Si-N coatings decreases from 0.84 to 0.45 with increasing Si content up to $16\;at.\%$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.124-125
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• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.

• 한국재료학회지
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• 제11권4호
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• pp.290-293
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• 2001

세라믹 타겟인 Sr$_2$Nb$_2$O$_{7}$ (SNO)과 Bi$_2$O$_3$을 장착한 RF-마그네트론 스퍼터링을 이용하여 SrBi$_2$Nb$_2$O$_{9}$ (SBN) 박막을 p-type Si(100) 기판 위에 증착하였다. 증착시 두 타겟의 파워비를 조절하여 조성의 변화에 따른 SBN 박막의 구조적 및 전기적 특성을 조사하였다. 증착된 SBN 박막은 $700^{\circ}C$의 산소분위기에서 1시간 동안 열처리를 하였으며 상부전극으로 Pt를 증착한 후 산소분위기에서 30분 동안 $700^{\circ}C$에서 전극 후열처리를 실시하였다. 증착된 SBN 박막은 $700^{\circ}C$ 열터리 후에 페로브스카이트 상을 나타냈으며 SNO 타겟과 Bi$_2$O$_3$타겟의 파워가 120 W/100 W 일 때 가장 좋은 전기적 특성을 나타내었다. 이때의 조성은 EPMA(Electron Probe X-ray Micro Analyzer) 분석을 통하여 확인하였으며 Sr:Bi:Nb의 비가 약 1:3:2임을 나타내었다. 이러한 과잉의 Bi조성을 가진 SBN 박막은 3-9 V의 인가전압에서 1.8 V-6.3 V의 우수한 메모리 윈도우 값을 나타내었으며 누설전류 값은 인가전압 5 V에서 1.54$\times$$10^{-7}$ A/$\textrm{cm}^2$였다.