• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.124-125
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• 2002

최근 자성막의 놀은 자기기록 밀도증가에 따른 고밀도 자성기록매체인 하드디스크(HDD)는 현재 80GByte까지의 저장용량을 가진 하드디스크의 자성합금층 보호막으로 DLC(Diamond-Like Carbon)가 이용되고 있다. 고저장용량을 가지는 하드디스크의 보호막 두께가 점차 얇아짐에 따라 보호막 재료의 경도 및 윤활성은 더욱 중요시되고 있다. 그러나, 보호막의 두께가 감소하면서 현재 적용되고 있는 DLC막으로는 조만간 물리적 한계에 도달할 것으로 예상된다. (중략)

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.279-286
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers has been quantitatively investigated. Serial samples of Co/Pt multilayers have been prepared by dc-magnetron sputtering under various Ar pressure. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both and R were found to be exponentially dependent on the reversing applied field. From the exponential dependencies, the activation volumes of the wall motion and nucleation could be determined based on a thermally activated relaxation model, and the wall-motion activation volume was revealed to be slightly larger than the nucleation activation volume.

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.216-223
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• 1998

DC magnetron sputtering 방법에 의해 Corning glass 가판 위에 제작한 buffer/[CoFe/Cu]N 형태의 다층작막에 대하여 자기저항비의 비자성층 Cu두께, 기저층 종류(Fe, Cu, Cr, Ta)와 두께, Ardkqfur, 다층 층수 및 열처리 의존성을 조사하였다. 자기저항비는 비자성층 Cu 두께에 따라 진동하였다. 기저층 Fe 및 Cr의 두께가 60$\AA$이고, 층수 N=15, Ardkqfur 5mTorr에서 극대자기저항비 14%를 보였으며 25$0^{\circ}C$까지의 시료에 대한 열처리는 다층박막의 주기성을 유지한 채 더 큰 결정립을 갖게 하여 자기저항비는 증가하였으나 그 이상의 온도에서는 계면 혼합 및 계면 확산에 의한 감소를 나타내었다. Cr기저층 시료가 Fe 기저층 시료보다 열적안정성이 더 좋은 것을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of Magnetics
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• v.5 no.4
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• pp.116-119
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers was quantitatively investigated. Serial samples of Co/Pt multilayers were prepared by dc-magnetron sputtering under various Ar pressures. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed V and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both V and R were found to be exponentially dependent on the applied reversing field. From the exponential dependencies, the activation volumes for wall motion and nucleation could be determined, based on a thermally activated relaxation model, and the wall-motion activation volume was found to be slightly larger than the nucleation activation volume.

• Applied Microscopy
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• v.29 no.2
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• pp.255-263
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• 1999

We have investigated the interfacial reactions in Co/Ti multilayer thin films prepared by DC Magnetron sputtering system. We observed that the amorphous Co-Ti phase formed by SSAR (Solid State Amorphization Reaction) upon annealing at $200^{\circ}C$. Upon annealing treatments at $300^{\circ}C\;and\;400^{\circ}C$, a crystalline phase of CoTi formed at the Co/Ti interface. The sheet resistance of Co/Ti multilayer thin film increased by the formation of the amorphous phase at the Co/Ti interface, which decreased by the formation of new crystalline compound CoTi.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.505-510
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• 2012

Cobalt oxide nanostructure materials have been prepared by adding several concentrations of spectator Ni ions in solution, and analyzed by electron microscopy, X-day diffraction, calorimetry/thermogravimetric analysis, UV-vis absorption, Raman, and X-ray photoelectron spectroscopy. The electron microscopy results show that the morphology of the nanostructures is dramatically altered by changing the concentration of spectator ions. The bulk XRD patterns of $350^{\circ}C$-annealed samples indicate that the structure of the cobalt oxide is all of cubic Fd-3m $Co_3O_4$, and show that the major XRD peaks shift slightly with the concentration of Ni ions. In Raman spectroscopy, we can confirm the XRD data through a more obvious change in peak position, broadness, and intensity. For the un-sputtered samples in the XPS measurement process, the XPS peaks of Co 2p and O 1s for the samples prepared without Ni ions exhibit higher binding energies than those for the sample prepared with Ni ions. Upon $Ar^+$ ion sputtering, we found $Co_3O_4$ reduces to CoO, on the basis of XPS data. Our study could be further applied to controlling morphology and surface oxidation state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.41-41
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• 2009

본 연구에서 사용한 대향 타겟식 스퍼터링(Facing Targets Sputtering) 법은 일반 스퍼터링 법의 단점을 보완한 고밀도 저온 고속성막이 가능한 장점을 가지고 있기 때문에 플랙시블 디스플레이의 기체 투과 방지막으로 많이 쓰이고 있는 SiOxNy, SiOx, SiNx의 박막을 다층으로 증착하여 polymer 기판 위에 조건에 따라 증착 후 박막의 특성을 연구하였다. 제작된 박막의 광학적 특성을 UV-VIS spectrophotometer(Shimadzu Co.)를 사용하여 200~1100nm의 파장 영역에서 광 투과도를 측정하였으며 박막의 두께와 균일도는 $\alpha$-step(Veeco Co.)을 사용하여 측정하였고, 절대 정량이 가능하고 비파괴 분석법인 RBS(KOBE STEEL LTD.)를 이용하여 표면의 성질을 규명하고 XRR(PANalytical X'Pert PRO)을 분석하여 박막의 계면영역에 대한 물성 변화를 평가하고 박막의 밀도를 측정하였다. SEM(Digital Instrument Co.) 사진을 통해 단면과 표면을 관찰하였고 구조적 특성은 AFM(Digital Instrument Co.)와 XRD(Rigaku Co.) 통해 측정하였고 박막의 성분비는 EDS(JEOL Co.)를 사용하였으며 투습률 측정장치 (MOCON)을 이용하여 WVTR를 측정하였다.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.831-836
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• 1999

Magnetic properties of (Fe(sub)1-xCo(sub)x)(sub)89Zr11 amorphous films fabricated by RF sputtering method have been investigated as a function of Co content x. By means of two step field annealing at 190~20$0^{\circ}C$ for 10 minutes in the magnetic field of 130 Oe, the film with x=0.4 among the samples shows the superior soft magnetic properties in spite of showing the high magnetostriction. For example, the obtained properties of coercivity and differential permeability measured in an exciting field of 10 mOe at the frequency of 8.7 MHz are 0.25 Oe and 280, respectively. It is confirmed that such behavior is due to the variation of magnetic anisotropies caused by a optimal compressive stress within the film.