• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.849-852
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• 2007

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.30-33
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• 2017

ZnO thin films which were deposited by RF magnetron sputtering system were annealed by furnace and insitu heat treatment methods. We investigated the effect of heat treatment method on physical properties of ZnO thin films. The structural and optical properties of ZnO thin films were improved by heat treatment. Through the annealing treatment of ZnO film by furnace, the good crystallinity and ultraviolet emission were obtained. These results are attributed to the improved formation of Zn-O bond in ZnO thin film annealed at by furnace. We confirm that the formation of Zn-O bond plays an important role in obtaining the excellent structural and optical properties of ZnO thin films.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.21-27
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• 2003

Micro-arc discharge oxidation (MDO) is a cost-effective plasma electrolytic process which can be used to improve the wear and corrosion resistance of Al-alloy parts by forming a alumina coating on the component surface. However, the MDO coated Al-alloy components often exhibit relatively high friction coefficients and low wear resistance fitted with many counterface materials, additionally, the pitting corrosion for the MDO coated AI-alloy components, especially for a thinner alumina coating, often occurs in atmosphere circumstance due to the porous alumina coats. Therefore, a duplex treatment, combining a MDO coated ahumina thin layer with a TiN coating, prepared by magnetron sputtering (MS), has been investigated. The Vicker's microhardness, pin-on-disc, electrochemical measurement, salt spray, XRD and SEM tests were used to characterize and analyze the treated samples. The work demonstrates that the MDO/MS coated samples have a combination of a very low friction coefficient and good wear resistance as well as corrosion since the micro-holes on alumina coating are partly or fully covered by TiN material.

• Journal of the Korean institute of surface engineering
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• v.50 no.2
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• pp.55-71
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• 2017

Transparent Conductive Oxide (TCO), especially Indium Tin Oxide (ITO) films are almost prepared by DC magnetron sputtering because of the advantage of obtaining homogeneous large area coatings with high reproducibility. The purpose of this report is describe a detailed investigation of key factors dominating electrical and structural properties of sputtered ITO films. It was confirmed that crystallinity and electrical properties of ITO films were strongly depend on the sputtering pressure and kinetic energy of sputtered particles which are expected to have a close relation with the transport processes between target and substrate. And also, nodule formation on the ITO target was suppressed by both $CaCO_3$ addition and decreasing micro-pore in the target. On the other hand, we focused on the characteristics of amorphous TCO film to use as transparent electrode for various applications. To realize high thermoelectric performance, it was tried to control both high electrical conductivity and low thermal conductivity for the amorphous IZO:Sn films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.585-586
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• 2005

BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기화학회:학술대회논문집
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• 2002.07a
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• pp.49-54
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• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.25-25
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• 2006

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.230-231
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 1991.11a
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• pp.88-89
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• 1991