• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.277-280
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• 2004

p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.214-218
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• 2011

In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.593-594
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.17.1-17.1
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.235-241
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• 1996

Co/Pd and Co/Pt multilayered thin films for perpendicular magnetic recording media were fabricated by sput¬tering method and the effects of the sputtering pressure during the formation of Pd or Pt underlayers on the magnetization behavior and coercivity of the multilayers were investigated. It was found that the coercivity of Co/Pd multilayers was strongly dependent on the sputtering pressure of underlayer and could be enhanced to a large extent merely by increasing the sputtering pressure of underlayer, while in case of Co/Pt films, the degree of coercivity enhancement by controlling the sputtering pressure of underlayer was almost negligible. Coercivity variation of Co/Pd and Co/Pt multilayers with the underlayer material and deposition pressure of underlayer could be well explained in terms of the interface roughness of multilayer films induced by underlayer topology, which could also be correlated to the change of perpendicular anisotropy energy and magnetic reversal feature with the sputtering pressure of underlayer. Kerr rotation angle was hardly affected by the preparation conditions of underlayers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.341-348
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• 1997

X-ray diffraction patterns of Pt/Co modulated films prepared by RF comagnetron sputtering method was investigated. Modulated films ([$Pt10.7\AA/Co2.8{\AA}{\times}{12}$]) were deposited on glass substrate with various sputtering conditions : sputtering with variations of gas pressures, sputtering with Xe instead Ar gas, and etching of the buffer layers. In order to obtain the structural information of Pt/Co modulated films, the structural model was constructed and calculated data of the model were compared with experimental ones. Comparison results showed that there were good agreements in satellite peak position and its intensity between them. This suggests that the realistic Pt/Co modulated film can be reproduced by our structure model.