• Applied Microscopy
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• v.29 no.2
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• pp.255-263
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• 1999

We have investigated the interfacial reactions in Co/Ti multilayer thin films prepared by DC Magnetron sputtering system. We observed that the amorphous Co-Ti phase formed by SSAR (Solid State Amorphization Reaction) upon annealing at $200^{\circ}C$. Upon annealing treatments at $300^{\circ}C\;and\;400^{\circ}C$, a crystalline phase of CoTi formed at the Co/Ti interface. The sheet resistance of Co/Ti multilayer thin film increased by the formation of the amorphous phase at the Co/Ti interface, which decreased by the formation of new crystalline compound CoTi.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.257-269
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• 1995

The TiC-Co/Al reaction-sintered products were prepared by the infiltration of various Co/Al metal mixture into the preform, and their microstructure, phases, and mechanical properties were investigated. With increasing the atomic ratio of Co/Al, tiC grain shape was changed from spherical to platelet particles, and the grain size increased. The crystalline phases found in the liquid matrix formed by the infiltration of Co/Al metal mixture were determined to be Al5Co2 and AlCo by EDS and XRD, and the two crystalline phases were located dominantly between TiC grains, when the Co/Al atomic ratio was lower than an unity. There was a tendency that the density, bending strength and fracture toughness increase with Co/Al atomic ratio until the infiltrated metal was 100% Co. The maximum value was achieved by the composition containing 100% Co infiltrated metal. The Vickers hardness decreased as Co/Al atomic ratio increased.

• BMB Reports
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• v.30 no.4
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• pp.246-252
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• 1997

Malonate decarboxylase from Acinetobacter calcoaceticus is shown to have malonyl-CoA: acetate CoA transferase. acetyl-CoA: malonate CoA transferase, and malonyl-CoA decarboxylase activity. These enzyme activities were elucidated by isotope exchange reactions. The enzyme modified by N-ethylmaleimide completely lost its malonate decarboxylase activity, whereas it still kept CoA transferases and malonyl-CoA decarboxylase activities. The existence of CoA transferases and malonyl-CoA decarboxylase activity is clear, but their physiological significance is obscure. The catalytic reactions for two eoA transfers and malonyl-CoA decarboxylation proceed via a cyclic mechanism, which is through two covalent intermediates, enzyme-Smalonyl and enzyme-S-acetyL proposed for malonate decarboxylation of the enzyme.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.105-111
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• 1996

We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.

• Bulletin of the Korean Chemical Society
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• v.20 no.6
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• pp.715-719
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• 1999

The incorporation of cobalt into mesoporous molecular sieves MCM-41 and MCM-48 was carried out. Co-PO/MCM41 and Co-PO/MCM48 were prepared using Co(II) acetate solution adjusted to pH = 3.0 with phosphoric acid by the incipient wetness method. Photoacoustic spectroscopy (PAS) was used to study the local environments of Co(II) incorporated into mesopores. The band around 500 nm in PAS of as-prepared Co-PO/MCM41 and Co-PO/MCM48 with Co(II) acetate solution was changed to triplet bands around 600 nm. This could be assigned to the 4 A2(F)-> 4T1(P) transition of Co(II) surrounded tetrahedrally by oxygen ions after calcination. It may be attributable to that the octahedral cobalt species containing phosphate ligands in coordination sphere reacting with framework's silanol groups to be dispersed atomically onto the surface of mesoporous molecular sieves as a tetrahedral species. This is unlike that the Co in Co-Cl/MCM41 and direct-synthesized Co-MCM41 transforms to Co oxide phase upon calcination. Co-PO/MCM41 and Co-PO/MCM48 were stable while treated with water.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.702-709
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• 1995

In this paper we review recent work in our laboratory on nanocomposite CoSm-based films including CoSm with Cr underlayer (CoSm//Cr), exchange-coupled magnetic films consisting of CoSm and FeCo layers (CoSm/FeCo), and CoSm multilayers with nonmagnetic spacing layers of SmO (CoSm/SmO). The emphasis is on detailed investigations of microstructure and magnetic properties for CoSm//Cr films, exchange-spring effects for CoSm/FeCo films, and interlayer effects for (CoSm/ SmO) multilayers.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.1
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• pp.23-29
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• 1997

Effects of Co thickness on the formation of epitaxial $CoSi_2$ from the Co/Ti bilayer have been investigated. Ti and Co were sequentially deposited with the Ti thickness fixed at 5 or 10nm, while the Co thickness was varied from 5 to 30nm. The metal-deposited samples were then rapidly thermal-annealed in $N_2$ at $900^{\circ}C$ for 20 sec. Material properties of $CoSi_2$ thin films were analyzed by the 4-point probe, XRD, AES, andXTEM. When the as-deposited Co thickness was below 15nm, the $CoSi_2$ with high resistivity and rough interface was formed. On the other hand, when the Co thickness was above 15 nm, the epitaxial $CoSi_2$ with the resistivity of about 16 ~ 19 $\mu\Omega.cm$, uniform composition and thickness and flat interface was formed. Initial Ti thickness has sizable effect on the formation of $CoSi_2$, when the Co layer was very thin (~ 5 nm). But there was no significant effect of the Ti thickness for the initial Co thickness of above 15 nm.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.30-36
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• 2006

A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

• Journal of Magnetics
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• v.16 no.1
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• pp.10-14
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• 2011

This study reports on Co/$Co_2$MnSn two-phase magnets. The Co/$Co_2$MnSn two-phase magnet has Co precipitates in a $Co_2MnSn$ Heusler alloy matrix, in which the two phases are exchange-coupled at the phase boundary. The as-casted Co/$Co_2$MnSn system, which has Co-Mn solid solution precipitates in a $Co_2$MnSn Heusler alloy matrix, showed that the Co solid solution precipitates are crystallographically coherent and there is exchange coupling at the phase boundary. To form pure Co precipitates by removal of Mn solute atoms in Co-Mn solid solution, annealing was carried out 48 hours at $870^{\circ}C$. After annealing, the low $T_c$ and low magnetization phase of the Co-Mn solid solution became a high $T_c$ and high magnetization phase of hexagonal Co.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.3-9
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• 2008

Al-Co-N thin films, Al-Co-N/Al-N and Al-Co-N/Al-Co multilayers containing various amounts of Co content were deposited by using a two-facing targets type dc sputtering (TFTS) system. The films were also annealed successively and isothermally at different annealing temperatures. Irrespective of Co content and preparation methods, all the as-deposited films were observed non-magnetized. It was found that annealing conditions can control the magnetic and electrical properties as well as the microstructure of the films.