• 제목/요약/키워드: circuit-level simulation

검색결과 276건 처리시간 0.027초

공통모드 전압 보정기능을 갖는 LCD 드라이버용 듀얼모드 LVDS 전송회로 (Dual-Level LVDS Circuit with Common Mode Bias Compensation Technique for LCD Driver ICs)

  • 김두환;김기선;조경록
    • 한국콘텐츠학회논문지
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    • 제6권3호
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    • pp.38-45
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    • 2006
  • 본 논문은 LCD driver IC의 전송선 당 데이터 전송률을 2배로 하기 위한 이중 저전압 차동신호 전송 (DLVDS) 회로를 제안한다. 제안된 회로에서는 2-비트 데이터를 하나의 송신기에서 입력 받고, 2-비트 데이터를 듀얼레벨을 갖는 차동신호로 전송한다. 따라서 기존의 저전압 차동신호 전송기법(LVDS)의 특징을 유지하면서 2-비트 데이터를 2개의 전송선을 통하여 전송할 수 있다. 제안된 송신기는 전류원 피드백 회로를 이용하여 출력의 공통모드 바이어스 흔들림을 보상했다. 그리하여 기존의 회로의 입력 바이어스와 기준 바이어스 전압 차이로 출력의 공통모드 바이어스 흔들림이 발생하는 문제가 해결되었다. 수신기에서는 디코드 회로를 통해 원래의 2-비트 입력 데이터를 복원할 수 있다. 제안된 회로는 $0.25{\mu}m$ CMOS 공정으로 설계하였고, 시뮬레이션 결과 1-Gbps/2-line의 전송률을 갖고, 2.5V의 전원에서 35-mW의 전력소모를 나타냈다.

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잡음 내성이 큰 단일 출력 레벨 쉬프터를 이용한 500 V 하프브리지 컨버터용 구동 IC 설계 (Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity)

  • 박현일;송기남;이용안;김형우;김기현;서길수;한석봉
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.719-726
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    • 2008
  • In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

전압 분배용 전하펌프를 사용한 LED 구동회로 (LED Driving Circuit using Charge Pump for Voltage Distribution)

  • 윤장희;유성호;염정덕
    • 조명전기설비학회논문지
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    • 제26권8호
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    • pp.1-7
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    • 2012
  • In this paper, a new LED driving circuit which is able to control dimming of LED is proposed using charge pump. The proposed LED driving circuit steps down the input voltage to operate LED without DC-DC converter. The operation of this driving circuit is verified by P-Spice simulation, and the characteristics of the driving circuit is measured and evaluated in the experiments. As a result, the driving circuit efficiency of 88.5[%] is obtained when all LEDs are turned on by digital control method at the highest dimming level(255/255).

새로운 고온 보호회로 (A Novel Thermal Shut Down circuit)

  • 박영배;구관본
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2006년도 전력전자학술대회 논문집
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    • pp.254-256
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    • 2006
  • A Novel way to support typical Thermal Shut Down(TSD) circuit is proposed. In power ICs, on-time or on-duration is the key factor to anticipate an abrupt increase of internal temperature. Such an abrupt raise of the temperature can cause TSD circuit cannot protect on proper time due to the temperature detection delay come from the physical distance or the imperfect coupling between heat sources and detector. The proposed circuit checks the duty ratio touched their maximum or not in every cycle. Once duty ratio touches the maximum duty, new circuit generates the warning signal to the TSD circuit and lowers pre-determined temperature for shut down to compensate the detection delay. The novel circuit will be analyzed to the transistor level and checked the validity by simulation.

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대용량 21 레벨 단상 AC/DC 컨버터 (High power 31 level Single Phase AC/DC Converter)

  • 전중함
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2000년도 전력전자학술대회 논문집
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    • pp.309-312
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    • 2000
  • Single-phase multi-level AC-DC converter is proposed that is composed of diode bridge and switch. The number of the supply current level is depending on the individual current level of the converter. A converter circuit the number of the level is equal to $\textrm{2}^{M+1}$-1 The proposed circuit has converter with 31 current levels. When the number of current level is increased smoother sinusoidal waveform can be obtained directly and it is possible to control the supply current almost continuously from zero to maximum without step changes of generating high voltage as pulse width modulation switching loss is decreased it has an advantage in large capacity. it is illustrated technique are confirmed the validity and effectiveness through the simulation & experiments

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32 비트 RISC/DSP 프로세서를 위한 17 비트 $\times$ 17 비트 곱셈기의 설계 (17$\times$17-b Multiplier for 32-bit RISC/DSP Processors)

  • 박종환;문상국;홍종욱;문병인;이용석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.914-917
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    • 1999
  • The paper describes a 17 $\times$ 17-b multiplier using the Radix-4 Booth’s algorithm. which is suitable for 32-bit RISC/DSP microprocessors. To minimize design area and achieve improved speed, a 2-stage pipeline structure is adopted to achieve high clock frequency. Each part of circuit is modeled and optimized at the transistor level, verification of functionality and timing is performed using HSPICE simulations. After modeling and validating the circuit at transistor level, we lay it out in a 0.35 ${\mu}{\textrm}{m}$ 1-poly 4-metal CMOS technology and perform LVS test to compare the layout with the schematic. The simulation results show that maximum frequency is 330MHz under worst operating conditions at 55$^{\circ}C$ , 3V, The post simulation after layout results shows 187MHz under worst case conditions. It contains 9, 115 transistors and the area of layout is 0.72mm by 0.97mm.

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게이트 레벨 동기 회로의 자동 합성에 관한 연구 (Automatic synthesis of gate-level timed circuits)

  • 김현기;신원철;안종복;이천희
    • 한국시뮬레이션학회:학술대회논문집
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    • 한국시뮬레이션학회 1997년도 춘계 학술대회 발표집
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    • pp.36-38
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    • 1997
  • 본 논문은 gate-level timed circuits의 자동 합성과 검증에 대한 것으로, 동기 회 로는 디자인을 최적화하기 위해 합성 절차가 사용된 동안 설계서에 명시된 시간 정보에 속 한 비동기 회로의 일부로서 이 시스템은 열거된 일반적인 회로 작용과 시간의 요구 조건에 대해 설계를 해석한다. 이 설계는 영향을 미치는 상태 공간을 구하기 위해 정확하고 효과적 인 시간 해석 알고리즘을 사용해 해석할 수 있는 그래픽 표현으로 자동적으로 변환된다. 이 상태공간으로부터 합성 절차는 standard-cells과 gate-arrays와 같은 반 주문형 반도체로 매핑을 용이하게 하기 위해 기본 게이트만을 사용해 어려움을 해결하는 시간에 대한 회로 유도된다.

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마스크 패턴데이타로 부터의 회로 파라미터 추출에 관한 연구 (A Study on Circuit Parameter Extraction from Mask Pattern Data)

  • 이재성;노승룡;김철주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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    • pp.1532-1535
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    • 1987
  • In this paper, we propose the algorithm for mask level simulation. The circuit parameters were extracted from the photomask data in format of bitmap. The extracted circuit parameter was transformed into the input file format of SPICE-16. And then the simulation of mask pattern data was carried out the SPICE-16. Thus the error operation of IC due to the mistake of photomask pattern could be prevented.

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A high frequency CMOS precision full-wave rectifier

  • Riewruja, V.;Wangwiwattana, C.;Guntapong, R.;Chaikla, A.;Linthong, A.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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    • pp.514-514
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    • 2000
  • In this article, the realization of a precision full-wave rectifier circuit for analog signal processing, which operates throughout in the current domain, is presented. The circuit makes use of a MOS class B/AB configuration, and provides a wide dynamic range and wide-band capability. The rectifier has a simple circuit configuration and is suitable for implementing in CMOS integrated circuit form as versatile building block. The characteristic of the circuit exhibits a low distortion en the output signal at low level input signal. PSPICE simulation results demonstrating the characteristic of the proposed circuit are included.

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RF 시뮬레이터를 이용한 UHF대역 다층구조 VCO 설계 (UHF Band Multi-layer VCO Design Using RF Simulator)

  • 이동회;정진휘
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.96-99
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    • 2001
  • In this paper, we present the simulation results of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonator, the oscillator and the buffer circuit. using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of the conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated using the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5[dBm], the phase noise was -104[dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 9.5[mA]. The size of VCO is $6{\times}9{\times}2mm$(0.11[cc]).

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