• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.341-349
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• 2001

Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD(metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactant to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. From the numerical calculation, the concentration of reactants could be qualitatively predicted by the Nusselt number(heat transfer) and the optimum mass flow rate, wall tilt angle and inlet condition were considered.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.12
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• pp.1632-1639
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• 2004

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

• Membrane and Water Treatment
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• v.9 no.4
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• pp.221-231
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• 2018

A new procedure to produce poly(vinylidene fluoride)/boron nitride hybrid membrane is presented for application in membrane distillation (MD) process. The influence of hexagonal boron nitride (h-BN) incorporation on the performance of the polymeric membranes is studied through the present investigation. For this aim, h-BN nanopowders were successfully synthesized using the simple chemical vapor deposition (CVD) route and subsequent solvent treatments. The resulting h-BN nanosheets were blended with poly(vinylidene fluoride) (PVDF) solution. Then, the prepared composite solution was subjected to phase inversion process to obtain PVDF/h-BN hybrid membranes. Various examinations such as scanning electron microscopy (SEM), wettability, permeation flux, mechanical strength and liquid entry pressure (LEP) measurements are performed to evaluate the prepared membrane. Moreover, Air gap membrane distillation (AGMD) experiments were carried out to investigate the salt rejection performance and the durability of membranes. The results show that our hybrid PVDF/h-BN membrane presents higher water permeation flux (${\sim}18kg/m^2h$) compared to pristine PVDF membrane. In addition, the experimental data confirms that the prepared nanocomposite membrane is hydrophobic (water contact angle: ${\sim}103^{\circ}$), has a porous skin layer (>85%), as well competitive fouling resistance and operational durability. Furthermore, the total salt rejection efficiency was obtained for PVDF/h-BN membrane. The results prove that the novel PVDF/h-BN membrane can be easily synthesized and applied in MD process for salt rejection purposes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.107-115
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• 2009

Particular interest in the role of convection in vapor crystal growth has arisen since some single crystals under high gravity acceleration of $10g_0$ appear considerably larger than those under normal gravity acceleration ($1g_0$). For both ${\Delta}T=60\;K$ and 90 K, the mass flux increases by a factor of 3 with increasing the gravity acceleration from $1g_0$ up to $10g_0$. On the other hand, for ${\Delta}T=30\;K$, the flux is increased by a factor of 1.36 for the range of $1g_0{\leq}g{\leq}10g_0$. The maximum growth rates for $1g_0$, $4g_0$, $10g_0$ appear approximately in the neighborhood of y = 0.5, and the growth rates shows asymmetrical patterns, which indicate the occurrence of either one single or more than one convective cell. The maximum growth rate for $10g_0$ is nearly greater than that for $1g_0$ by a factor of 2.0 at $P_B=20\;Torr$. For three different gravity levels of $1g_0$, $4g_0$ and $10g_0$, the maximum growth rates are greater than the minimum rates by a factor of nearly 3.0, based on $P_B=20\;Torr$. The mass flux increases with increasing the gravity acceleration, for $1g_0{\leq}g_y{\leq}10g_0$, and decreases with increasing the partial pressure of component B, xenon (Xe), $P_B$. The $|U|_{max}$ is directly proportional to the gravity acceleration for $20\;Torr{\leq}P_B{\leq}300\;Torr$. As the partial pressure of $P_B$ (Torr) decreases from 300 Torr to 20 Torr, the slopes of the $|U|_{max}s$ versus the gravity accelerations increase from 0.1 sec to 0.17 sec. The mass flux of $Hg_2Cl_2$ is exponentially decayed with increasing the partial pressure of component B, $P_B$ (Torr) from 20 Torr up to 300 Torr.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.502-507
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• 2016

Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.1
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• pp.61-69
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• 1998

Vapor Axial Deposition (VAD), one of optical fiber preform fabrication processes, is performed by deposition of submicron-size silica particles that are synthesized by combustion of raw chemical materials. In this study, flow field is assumed to be a forced uniform flow perpendicularly impinging on a rotating disk. Similarity solutions obtained in our previous study are utilized to solve the particle transport equation. The particles are approximated to be in a polydisperse state that satisfies a lognormal size distribution. A moment model is used in order to predict distributions of particle number density and size simultaneously. Deposition of the particles on the disk is examined considering convection, Brownian diffusion, thermophoresis, and coagulation with variations of the forced flow velocity and the disk rotating velocity. The deposition rate and the efficiency directly increase as the flow velocity increases, resulting from that the increase of the forced flow velocity causes thinner thermal and diffusion boundary layer thicknesses and thus causes the increase of thermophoretic drift and Brownian diffusion of the particles toward the disk. However, the increase of the disk rotating speed does not result in the direct increase of the deposition rate and the deposition efficiency. Slower flow velocity causes extension of the time scale for coagulation and thus yields larger mean particle size and its geometric standard deviation at the deposition surface. In the case of coagulation starting farther from the deposition surface, coagulation effects increases, resulting in the increase of the particle size and the decrease of the deposition rate at the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.480-480
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• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.230-236
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• 2021

Ionic conduction mechanism of Mg-Al layered double hydroxides (LDHs) intercalated with CO₃^2- (Mg-Al CO₃^2- LDH) was studied. The electromotive force for the water vapor concentration cell using Mg-Al CO₃^2- LDH as electrolyte showed water vapor partial pressure dependence and obeyed the Nernst equation, indicating that the hydroxide ion transport number of Mg-Al CO₃^2- LDH is almost unity. The ionic conductivity of Mg(OH)₂, MgCO₃ and Al₂(CO₃)₃ was also examined. Only Al₂(CO₃)₃ showed high hydroxide ion conductivity of the order of 10^-4 S cm^-1 under 80% relative humidity, suggesting that Al₂(CO₃)₃ is an ion conducting material and related to the generation of carrier by interaction with water. To discuss the ionic conduction mechanism, Mg-Al CO₃^2- LDH having deuterium water as interlayer water (Mg-Al CO₃^2- LDH(D₂O)) was prepared. After the adsorbed water molecules on the surface of Mg-Al CO₃^2- LDH(D₂O) were removed by drying, DC polarization test for dried Mg-Al CO₃^2- LDH(D₂O) was examined. The absorbance attributed to O-D-stretching band for Mg-Al CO₃^2- LDH(D₂O) powder at around the positively charged electrode is larger than that before polarization, indicating that the interlayer in Mg-Al CO₃^2- LDH is a hydroxide ion conduction channel.