• 제목/요약/키워드: chemical vapor transport

검색결과 117건 처리시간 0.029초

수평형 MOCVD에 의한 GaN 에피층 성장시 반응로내의 열 및 물질전달에 관한 수치해석 연구 (Numerical Analysis on the Beat and Mass Transport in Horizontal MOCVD Reactor for the Growth of GaN Epitaxy)

  • 신창용;윤정모;이철로;백병준
    • 한국진공학회지
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    • 제10권3호
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    • pp.341-349
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    • 2001
  • 수평형 MOCVD (유기금속 화학기상법) 제조공정에서 유체유동, 열전달 및 화학종의 국소적 질량분율을 고찰하기 위한 수치계산을 수행하였다. 수송가스로 작용하는 수소가스와 TMG및 암모니아의 농도분포를 예측함으로서 혼합과정을 분석하고 필름성장의 균일성을 예측하였다. 농도분포에 미치는 입구크기, 위치, 질량유량 및 벽면의 경사각도의 영향이 검토되었다. 계산결과로서 무차원 대류 열전달 계수 Nu에 의해 반응물의 농도분포를 정성적으로 예측할 수 있었으며, 균일한 필름성장을 위한 최적 질량유량, 벽면 경사도 및 입구조건이 제시되었다.

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고품질 질화물 반도체 박막 성장을 위한 반응로 구조 및 열적 조건에 관한 연구 (A Study on the Reactor Configuration and Thermal Conditions for the Growth of High Quality Thin Film of GaN Layer)

  • 김진택;백병준;이철로;박복춘
    • 대한기계학회논문집B
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    • 제28권12호
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    • pp.1632-1639
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    • 2004
  • Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

PVDF/h-BN hybrid membranes and their application in desalination through AGMD

  • Moradi, Rasoul;Shariaty-Niassar, Mojtaba;Pourkhalili, Nazila;Mehrizadeh, Masoud;Niknafs, Hassan
    • Membrane and Water Treatment
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    • 제9권4호
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    • pp.221-231
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    • 2018
  • A new procedure to produce poly(vinylidene fluoride)/boron nitride hybrid membrane is presented for application in membrane distillation (MD) process. The influence of hexagonal boron nitride (h-BN) incorporation on the performance of the polymeric membranes is studied through the present investigation. For this aim, h-BN nanopowders were successfully synthesized using the simple chemical vapor deposition (CVD) route and subsequent solvent treatments. The resulting h-BN nanosheets were blended with poly(vinylidene fluoride) (PVDF) solution. Then, the prepared composite solution was subjected to phase inversion process to obtain PVDF/h-BN hybrid membranes. Various examinations such as scanning electron microscopy (SEM), wettability, permeation flux, mechanical strength and liquid entry pressure (LEP) measurements are performed to evaluate the prepared membrane. Moreover, Air gap membrane distillation (AGMD) experiments were carried out to investigate the salt rejection performance and the durability of membranes. The results show that our hybrid PVDF/h-BN membrane presents higher water permeation flux (${\sim}18kg/m^2h$) compared to pristine PVDF membrane. In addition, the experimental data confirms that the prepared nanocomposite membrane is hydrophobic (water contact angle: ${\sim}103^{\circ}$), has a porous skin layer (>85%), as well competitive fouling resistance and operational durability. Furthermore, the total salt rejection efficiency was obtained for PVDF/h-BN membrane. The results prove that the novel PVDF/h-BN membrane can be easily synthesized and applied in MD process for salt rejection purposes.

Theoretical gravity studies on roles of convection in crystal growth of $Hg_2Cl_2$-Xe by physical vapor transport under normal and high gravity environments

  • Kim, Geug-Tae;Kwon, Moo-Hyun
    • 한국결정성장학회지
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    • 제19권3호
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    • pp.107-115
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    • 2009
  • Particular interest in the role of convection in vapor crystal growth has arisen since some single crystals under high gravity acceleration of $10g_0$ appear considerably larger than those under normal gravity acceleration ($1g_0$). For both ${\Delta}T=60\;K$ and 90 K, the mass flux increases by a factor of 3 with increasing the gravity acceleration from $1g_0$ up to $10g_0$. On the other hand, for ${\Delta}T=30\;K$, the flux is increased by a factor of 1.36 for the range of $1g_0{\leq}g{\leq}10g_0$. The maximum growth rates for $1g_0$, $4g_0$, $10g_0$ appear approximately in the neighborhood of y = 0.5, and the growth rates shows asymmetrical patterns, which indicate the occurrence of either one single or more than one convective cell. The maximum growth rate for $10g_0$ is nearly greater than that for $1g_0$ by a factor of 2.0 at $P_B=20\;Torr$. For three different gravity levels of $1g_0$, $4g_0$ and $10g_0$, the maximum growth rates are greater than the minimum rates by a factor of nearly 3.0, based on $P_B=20\;Torr$. The mass flux increases with increasing the gravity acceleration, for $1g_0{\leq}g_y{\leq}10g_0$, and decreases with increasing the partial pressure of component B, xenon (Xe), $P_B$. The $|U|_{max}$ is directly proportional to the gravity acceleration for $20\;Torr{\leq}P_B{\leq}300\;Torr$. As the partial pressure of $P_B$ (Torr) decreases from 300 Torr to 20 Torr, the slopes of the $|U|_{max}s$ versus the gravity accelerations increase from 0.1 sec to 0.17 sec. The mass flux of $Hg_2Cl_2$ is exponentially decayed with increasing the partial pressure of component B, $P_B$ (Torr) from 20 Torr up to 300 Torr.

그래핀 나노 시트 위에 2차원 나노구조를 갖는 VO2의 성장 (Growth of Two-Dimensional Nanostrcutured VO2 on Graphene Nanosheets)

  • 오수아;김기출
    • 한국산학기술학회논문지
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    • 제17권9호
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    • pp.502-507
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    • 2016
  • 이산화바나듐은 섭씨 68도에서 금속-절연체 상전이 특성을 나타내는 써모크로믹(thermochromic) 소재로서, 상전이 현상이 일어날 때 광학적, 전기적 성질이 급격히 변화하며, 이러한 상전이 현상은 가역적인 특성을 가지고 있다. 이산화바나듐의 금속-절연체 상전이 현상을 응용하기 위하여 상전이 온도를 상온 부근으로 낮추고자하는 많은 시도들이 있었으며, 직경 100 nm의 1차원 나노구조를 갖는 이산화바나듐 나노와이어의 경우 $29^{\circ}C$ 근처에서 상전이 현상이 일어남이 보고되었다. 본 연구에서는 기상 수송 방법(vapor transport method)을 사용하여 1차원 또는 2차원 나노구조를 갖는 이산화바나듐을 성장시켰다. 특히 동일한 성장 조건에서도 기판에 따라 다른 형태로 이산화바나듐이 성장하는 것을 확인하였다. 즉 Si 기판($Si{\setminus}SiO_2$(300 nm) 위에서는 1차원 나노와이어 형태의 이산화바나듐이 성장하였고, 그래핀 나노시트 위에서 합성된 이산화바나듐은 2차원 또는 3차원 나노구조를 가지고 성장하였다. 바나듐 옥사이드 나노구조체의 성장에 사용된 Si 웨이퍼 위에 박리-전사된 그래핀 나노시트 기판과 thermal CVD 시스템으로 성장된 1D 또는 2D & 3D 나노 구조를 갖는 $VO_2$의 결정학적 특성을 Raman 분광학으로 분석하였다. Raman 분석결과 성장된 바나듐 옥사이드는 $VO_2$ 상을 갖는 것을 확인하였다.

스퍼터링 증확 CdTe 박막의 두께 불균일 현상 개선을 위한 화학적기계적연마 공정 적용 및 광특성 향상 (Application of CMP Process to Improving Thickness-Uniformity of Sputtering-deposited CdTe Thin Film for Improvement of Optical Properties)

  • 박주선;임채현;류승한;명국도;김남훈;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.375-375
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    • 2010
  • CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

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VAD공정 관련 회전하는 원판으로의 입자 부착 (Particle deposition on a rotating disk in application to vapor deposition process (VAD))

  • 송창걸;황정호
    • 대한기계학회논문집B
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    • 제22권1호
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    • pp.61-69
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    • 1998
  • Vapor Axial Deposition (VAD), one of optical fiber preform fabrication processes, is performed by deposition of submicron-size silica particles that are synthesized by combustion of raw chemical materials. In this study, flow field is assumed to be a forced uniform flow perpendicularly impinging on a rotating disk. Similarity solutions obtained in our previous study are utilized to solve the particle transport equation. The particles are approximated to be in a polydisperse state that satisfies a lognormal size distribution. A moment model is used in order to predict distributions of particle number density and size simultaneously. Deposition of the particles on the disk is examined considering convection, Brownian diffusion, thermophoresis, and coagulation with variations of the forced flow velocity and the disk rotating velocity. The deposition rate and the efficiency directly increase as the flow velocity increases, resulting from that the increase of the forced flow velocity causes thinner thermal and diffusion boundary layer thicknesses and thus causes the increase of thermophoretic drift and Brownian diffusion of the particles toward the disk. However, the increase of the disk rotating speed does not result in the direct increase of the deposition rate and the deposition efficiency. Slower flow velocity causes extension of the time scale for coagulation and thus yields larger mean particle size and its geometric standard deviation at the deposition surface. In the case of coagulation starting farther from the deposition surface, coagulation effects increases, resulting in the increase of the particle size and the decrease of the deposition rate at the surface.

Effect of deposition parameters on structure of ZnO films deposited by an DC Arc Plasmatron

  • Penkov, Oleksiy V.;Chun, Se-Min;Kang, In-Jae;Lee, Heon-Ju
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.255-255
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    • 2011
  • Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

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Depositon of Transparent Conductive Films by a DC arc Plasmatron

  • Penkov, O.V.;Plaksin, V. Yu.;Joa, S.B.;Kim, J.H.;LEE, H.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.480-480
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    • 2010
  • In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

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Hydroxide ion Conduction Mechanism in Mg-Al CO32- Layered Double Hydroxide

  • Kubo, Daiju;Tadanaga, Kiyoharu;Hayashi, Akitoshi;Tatsumisago, Masahiro
    • Journal of Electrochemical Science and Technology
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    • 제12권2호
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    • pp.230-236
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    • 2021
  • Ionic conduction mechanism of Mg-Al layered double hydroxides (LDHs) intercalated with CO32- (Mg-Al CO32- LDH) was studied. The electromotive force for the water vapor concentration cell using Mg-Al CO32- LDH as electrolyte showed water vapor partial pressure dependence and obeyed the Nernst equation, indicating that the hydroxide ion transport number of Mg-Al CO32- LDH is almost unity. The ionic conductivity of Mg(OH)2, MgCO3 and Al2(CO3)3 was also examined. Only Al2(CO3)3 showed high hydroxide ion conductivity of the order of 10-4 S cm-1 under 80% relative humidity, suggesting that Al2(CO3)3 is an ion conducting material and related to the generation of carrier by interaction with water. To discuss the ionic conduction mechanism, Mg-Al CO32- LDH having deuterium water as interlayer water (Mg-Al CO32- LDH(D2O)) was prepared. After the adsorbed water molecules on the surface of Mg-Al CO32- LDH(D2O) were removed by drying, DC polarization test for dried Mg-Al CO32- LDH(D2O) was examined. The absorbance attributed to O-D-stretching band for Mg-Al CO32- LDH(D2O) powder at around the positively charged electrode is larger than that before polarization, indicating that the interlayer in Mg-Al CO32- LDH is a hydroxide ion conduction channel.