• Bulletin of the Korean Chemical Society
• /
• v.30 no.11
• /
• pp.2661-2664
• /
• 2009

Photodissociation of nitrous oxide near 203 nm has been studied by a combination of high resolution slice ion imaging technique and (2+1) resonance-enhanced multiphoton ionization (REMPI) spectroscopy of $N_2(X^1{{\Sigma}_g}^+)$ via the (a″$^1{{\Sigma}_g}^+$) state. We have measured the recoil velocity and angular distributions of $N_2$ fragments by ion images of the state-resolved photofragments. The $N_2$ fragments were highly rotationally excited and the NN-O bond dissociation energy was determined to be 3.635 eV. Also, we investigated the photofragment images from the photodissociation of $N_2O$ clusters with various stagnation pressures.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.5
• /
• pp.1339-1344
• /
• 2013

We have synthesized several glycosyl ergosterols and 5,6-dihydroergosterols (DHE) and examined their effects on production of nitric oxide (NO) and iNOS protein expression in LPS-treated RAW264.7 macrophage cells. Our results showed that DHE derivatives inhibited production of NO and iNOS protein expression more strongly than ergosterol derivative. Especially, DHE-Glc exhibited most potent inhibitory activity without cytotoxicity up to the concentration of $100{\mu}M$.

• Journal of the Korean Chemical Society
• /
• v.28 no.5
• /
• pp.323-327
• /
• 1984

Nicotine was reacted with an equimolar amount of ozone in methylene chloride and distilled water. The reaction mixture was separated by column chromatography or thin layer chromatography and then purified by vacuum distillation. The six compounds obtained from this reaction were characterized by NMR, IR and Mass spectrometry. These were identified as unchanged nicotine, nornicotine, anabasine, ${\beta}$-nicotyrine, cotinine and nicotine-N-oxide. From these results, reaction mechanism for the ozonolysis ofon nicotine was proposed; the pyrrolidine ring is attacked by ozone at the 1'-position followed by further transformation.

• Journal of the Korean Ceramic Society
• /
• v.33 no.7
• /
• pp.735-742
• /
• 1996

Antimony-doped Tin oxide (ATO) thin films were deposited on soda-lime glass substrates by DC magnetron sputtering technique. Effects of DC power film thickness and post heat-treatment on electrical conductivity of ATO film were investigated. Other properties of ATO film such as optical anti-chemical and wear properties were also reported in this work. The obtained ATO films showed electrical resistivities ranging from 5$\times$10-3 $\Omega$cm to 3$\times$10-3 $\Omega$cm with the average optical transparency above 80% in visible wavelength range and excel-lent anti-chemical properties where the electrical resistivity was not changed even after soaking the films in 1M HCl or 1M NaOH solution for 10 days. These properties were found to be related to the crystallinity of ATO film and the films having higher crystallinity showed better properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.2
• /
• pp.125-130
• /
• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.47-47
• /
• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2000.11a
• /
• pp.3-8
• /
• 2000

Chemical nature of nascent metal surfaces which is one of the important active sources for tribochemical reactions was investigated using a newly developed method. Some enhanced activities were observed. For example, organic compounds chemisorbed on nascent gold surfaces and aromatic compounds decomposed on nascent nickel surfaces resulting in hydrogen evolution. Non-polar compounds such as organic sulfides had a higher chemisorption activity on nascent steel surfaces than polar compounds such as fatty acids and phosphates. Organic sulfides reacted directly with nascent steel surfaces and the surface was covered with metal sulfides. The activity for the chemisorption of organic compounds was closely dependent on the electronic structure of metals. Although benzene chemisorbed very easily on nascent surfaces of transition metals, it did not chemisorb ell nascent surfaces of simple metals. Boundary lubricating behaviors of extreme pressure additives were explained on the bases of the chemical activities of nascent surfaces obtained in this investigation. Under mild conditions, polar compounds such as fatty acids and phosphates were effective for boundary lubrication, because surfaces are covered with oxide layers. On the other hand, sulfides were more effective under severe conditions where the oxide layers were removed and the nascent surfaces were formed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.265.1-265.1
• /
• 2013

Nanoporous anodic aluminum oxide (AAO), a self-ordered hexagonal array has various applications for nanofabrication such as nanotemplate, and nanostructure. In order to obtain highly-ordered porous alumina membranes, Masuda et al. proposed a two-step anodization process however this process is confined to small domain size and long hours. Recently, alternative methods overcoming limitations of two-step process were used to make prepatterned Al surface. In this work, we confirmed that there is a specific tendency used a PDMS stamp to obtain a pre-patterned Al surface. Using the nanoindentaions of a PDMS stamp as chemical carrier for wet etching, we can easily get ordered nanoporous template without two-step process. This chemical etching method using a PDMS stamp is very simple, fast and inexpensive. We use two types of PDMS stamps that have different intervals (800nm, 1200nm) and change some parameters have influenced the patterning of being anodized, applied voltage, soaking and stamping time. Through these factors, we demonstrated the patterning effect of large scale PDMS stamp.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.29 no.4 s.235
• /
• pp.477-484
• /
• 2005

Model fer the dynamic simulation of dynamic behaviors of a solid oxide fuel cell (SOFC) is provided. This model is based upon (1) coupled mass and heat transfer characteristics and (2) important chemical reactions such as electrochemical and reforming reactions in high temperature fuel cells such as SOFC. It is found that the thermal inertia of solid materials in SOFC plays an important role to the dynamic behavior of cell temperature. Dynamic characteristics of cell voltage, power, and chemical compositions with different levels of load change are investigated.

• Journal of Surface Science and Engineering
• /
• v.32 no.3
• /
• pp.297-302
• /
• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.