• Korean Journal of Soil Science and Fertilizer
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• v.44 no.6
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• pp.1185-1194
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• 2011

This study was carried out to estimate carbon emission using LCA (Life Cycle Assessment) and to establish LCI (Life Cycle inventory) DB for lettuce production system in protected cultivation. The results of data collection for establishing LCI DB showed that the amount of fertilizer input for 1 kg lettuce production was the highest. The amounts of organic and chemical fertilizer input for 1 kg lettuce production were 7.85E-01 kg and 4.42E-02 kg, respectively. Both inputs of fertilizer and energy accounted for the largest share. The amount of field emission for $CO_2$, $CH_4$ and $N_2O$ for 1 kg lettuce production was 3.23E-02 kg. The result of LCI analysis focused on GHG (Greenhouse gas) showed that the emission value to produce 1 kg of lettuce was 8.65E-01 kg $CO_2$. The emission values of $CH_4$ and $N_2O$ to produce 1 kg of lettuce were 8.59E-03 kg $CH_4$ and 2.90E-04 kg $N_2O$, respectively. Fertilizer production process contributed most to GHG emission. Whereas, the amount of emitted nitrous oxide was the most during lettuce cropping stage due to nitrogen fertilization. When GHG was calculated in $CO_2$-equivalents, the carbon footprint from GHG was 1.14E-+00 kg $CO_2$-eq. $kg^{-1}$. Here, $CO_2$ accounted for 76% of the total GHG emissions from lettuce production system. Methane and nitrous oxide held 16%, 8% of it, respectively. The results of LCIA (Life Cycle Impact assessment) showed that GWP (Global Warming Potential) and POCP (Photochemical Ozon Creation Potential) were 1.14E+00 kg $CO_2$-eq. $kg^{-1}$ and 9.45E-05 kg $C_2H_4$-eq. $kg^{-1}$, respectively. Fertilizer production is the greatest contributor to the environmental impact, followed by energy production and agricultural material production.

• Clean Technology
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• v.27 no.4
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• pp.341-349
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• 2021

In combustion facilities, the nitrogen and sulfur in fossil fuels react with oxygen to generate air pollutants such as nitrogen oxides (NO_X) and sulfur oxides (SO_X), which are harmful to the human body and cause environmental pollution. There are regulations worldwide to reduce NO_X and SO_X, and various technologies are being applied to meet these regulations. There are commercialized methods to reduce NO_X and SO_X emissions such as selective catalytic reduction (SCR), selective non-catalytic reduction (SNCR) and wet flue gas desulfurization (WFGD), but due to the disadvantages of these methods, many studies have been conducted to simultaneously remove NO_X and SO_X. However, even in the NO_X and SO_X simultaneous removal methods, there are problems with wastewater generation due to oxidants and absorbents, costs incurred due to the use of catalysts and electrolysis to activate specific oxidants, and the harmfulness of gas oxidants themselves. Therefore, in this research, microbubbles generated in a high-pressure disperser and reducing agents were used to reduce costs and facilitate wastewater treatment in order to compensate for the shortcomings of the NO_X, SO_X simultaneous treatment method. It was confirmed through image processing and ESR (electron spin resonance) analysis that the disperser generates real microbubbles. NO_X and SO_X removal tests according to temperature were also conducted using only microbubbles. In addition, the removal efficiencies of NO_X and SO_X are about 75% and 99% using a reducing agent and microbubbles to reduce wastewater. When a small amount of oxidizing agent was added to this microbubble system, both NO_X and SO_X removal rates achieved 99% or more. Based on these findings, it is expected that this suggested method will contribute to solving the cost and environmental problems associated with the wet oxidation removal method.

• Clean Technology
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• v.29 no.2
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• pp.126-134
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• 2023

Direct catalytic decomposition is a promising method for controlling the emission of nitrous oxide (N₂O) from the semiconductor and display industries. In this study, a γ-Al₂O₃ catalyst was developed to reduce N₂O emissions by a catalytic decomposition reaction. The γ-Al₂O₃ catalyst was prepared by an extrusion method using boehmite powder, and a N₂O decomposition test was performed using a catalyst reactor that was approximately 25.4 mm (1 in) in diameter packed with approximately 5 mm of catalysts. The N₂O decomposition tests were carried out with approximately 1% N₂O at 550 to 750 ℃, an ambient pressure, and a GHSV=1800-2000 h^-1. To confirm the N₂O decomposition properties and the effect of O₂ and steam on the N₂O decomposition, nitrogen, air, and air and steam were used as atmospheric gases. The catalytic decomposition tests showed that the 1% N₂O had almost completely disappeared at 700 ℃ in an N₂ atmosphere. However, air and steam decreased the conversion rate drastically. The long term stability test carried out under an N₂ atmosphere at 700 ℃ for 350 h showed that the N₂O conversion rate remained very stable, confirming no catalytic activity changes. From the results of the N₂O decomposition tests and long-term stability test, it is expected that the prepared γ-Al₂O₃ catalyst can be used to reduce N₂O emissions from several industries including the semiconductor, display, and nitric acid manufacturing industry.

• Journal of the Korean Society of Food Science and Nutrition
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• v.39 no.7
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• pp.980-985
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• 2010

The objective of this study was to isolate and identify anti-inflammatory chemicals in Hippophae rhamnoides L. which was grown in Chuncheon, Korea. Treatment of ethanol extracts from stems, leaves, roots, and fruits to RAW 264.7 cells reduced amounts of nitrite by 56.0, 31.9, 49.1, and 18.9% respectively, compared to only lipopolysaccharide (LPS) treatment which is well-known as a inflammation-inducing agent. The stems were extracted with hexane, dichloromethane, ethyl acetate, butanol, and water and their nitrite contents in RAW 264.7 cells were measured. The dichloromethane extracts showed the highest inflammatory activity, exhibiting 80% reduction of the nitrite content at 1 mg/mL treatment. Activity-directed fractionation of dichloromethane extracts led to the identification of $\beta$-sitosterol as the anti-inflammatory chemical. 0.1 mg/mL treatment of $\beta$-sitosterol inhibited strongly the production of nitrite by 65%, compared to only LPS treatment. These results suggest that stem of H. rhamnoides L. may be useful for inflammation treatment.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Korean Journal of Food Science and Technology
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• v.48 no.3
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• pp.289-295
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• 2016

To elucidate the new biologically active ingredient in commercial instant coffee, a crude polysaccharide (ICP-0) was isolated by ethanol precipitation, and its immunostimulatory activity was estimated. ICP-0 mainly consisted of galactose (55.5%), mannose (25.7%), arabinose (6.0%), and galacturonic acid (10.1%), suggesting the possibility of its existence as a mixture of galactomannan or pectic polysaccharide. ICP-0 showed proliferative activity in peritoneal macrophages and splenocytes. ICP-0 dose-dependently augmented the production of nitric oxide and reactive oxygen species by peritoneal macrophages. In addition, murine peritoneal macrophages stimulated by ICP-0 showed enhanced production of various cytokines (tumor necrosis factor-${\alpha}$, interleukin-6, and interleukin-12) as compared to unstimulated murine peritoneal macrophages. In an in vitro assay for assessing intestinal immunomodulation, the ICP-0-treated Peyer's patch cells showed higher bone marrow cell proliferation activity at $100{\mu}g/mL$ and higher production of granulocyte-macrophage colony-stimulating factor, compared to the untreated Peyer's patch cells. These results suggest that polysaccharides in commercial instant coffee have a potentiality for macrophage functions and the intestinal immune system.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.336-340
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• 2015

Three different types of polycarbonate (PC)/graphene oxide (GO) composites using diphenyl carbonate as a monomer were fabricated by melt polymerization. Those were the PC/GO composite (PC/GO) using a twin extruder, in-situ PC/GO composite (PC/GO-cat.) using a catalyst, and in-situ PC/GO composite (PC/GO-COCl) using a GO-COCl treated by -COCl, Chemical structures of the composites were confirmed by C-H and C=O stretching peak at $3000cm^{-1}$ and $1750cm^{-1}$, respectively. The slope for the storage (G') versus loss (G") modulus plot decreased with an increase in the heterogeneous property of polymer melts. So we can check the GO dispersion of the PC/GO composites using by the slop for G'-G" plot. According to the G'- G" slopes for three different types of PC/GO composites, GO was well dispersed within PC matrix in case of PC/GO and PC/GO-cat.. It was also confirmed by atomic force microscope (AFM) photos. One of the reasons for the poor GO dispersion of PC/GO-COCl is branching and crosslinking processes occurred during polymerization, which was further confirmed by a plot for the complex modulus versus phase difference.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.356-361
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• 2015

$Cd_{0.5}Zn_{0.5}S/ZnO$ composite photocatalysts were synthesized using the precipitation method and characterized by XRD, UV-vis DRS, PL and FE-SEM. Photocatalytic activities of the materials were evaluated by measuring the degradation of rhodamine B under visible light irradiation. Contrary to ZnO, $Cd_{0.5}Zn_{0.5}S/ZnO$ materials absorb visible light as well as UV and their absorption intensities in visible region increased with increasing the $Cd_{0.5}Zn_{0.5}S$ amount. The increment in the $Cd_{0.5}Zn_{0.5}S$ content in $Cd_{0.5}Zn_{0.5}S/ZnO$ also leads to reducing the particle size and consequently increasing the specific surface area. $Cd_{0.5}Zn_{0.5}S/ZnO$ materials with the larger $Cd_{0.5}Zn_{0.5}S$ content showed the higher activity in the photocatalytic degradation of rhodamine B under visible light irradiation. Therefore, the heterojunction effect between $Cd_{0.5}Zn_{0.5}S$ and ZnO as well as the adsorption capacity seems to give important contributions to the photocatalytic activity of the $Cd_{0.5}Zn_{0.5}S/ZnO$.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.61-65
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• 2012

A $Li_2O-2SiO_2$ ($LS_2$) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The $Li_2O-2SiO_2$ glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate $LS_2$ glass samples which have a particular size as well as high transparency. The sintered samples, $15mm\phi{\times}2mmT$ in size, ($LS_2$-s) were produced by SPS between $480^{\circ}C$ and $500^{\circ}C$ at 45MPa for 3~5mim, after which the thermal and dielectric properties of the $LS_2$-s samples were compared with those of quenched glass ($LS_2$-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the $LS_2$-s had an amorphous structure, like the $LS_2$-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at $800^{\circ}C$. We observed similar dielectric peaks in both of the samples between room temperature and $700^{\circ}C$. The DC activation energies of the $LS_2$-q and $LS_2$-s samples were $0.48{\pm}0.05eV$ and $0.66{\pm}0.04eV$, while the AC activation energies were $0.48{\pm}0.05eV$ and $0.68{\pm}0.04eV$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.400-401
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• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.