• Title/Summary/Keyword: chemical oxide

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Effect of Reduced Graphene Oxide in Photoanode on Photoelectrochemical Performance in Water Splitting for Hydrogen Production (수소생산을 위한 물 분해용 광전극에 도입된 환원된 산화그래핀이 광전기화학성능에 미치는 영향)

  • YOON, SANGHYEOK;DING, JIN-RUI;KIM, KYO-SEON
    • Transactions of the Korean hydrogen and new energy society
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    • v.27 no.4
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    • pp.329-334
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    • 2016
  • Hydrogen is eco-friendly alternative energy source and the photoelectrochemical water splitting is believed to be one of the promising methods for hydrogen production. Many researchers have studied several potential photocatalysts to increase the photoelectochemical performance efficiency for hydrogen conversion. In this study, the GO (graphene oxide) was prepared by Tour's method and was dispersed in precursor solutions of $WO_3$ and $BiVO_4$. Those precursor solutions were spin-coated on FTO glass and several photocatalyst thin films of $WO_3$, $BiVO_4$ and $WO_3/BiVO_4$ were prepared by calcination. The morphologies of prepared photocatalyst thin films were measured by scanning electron microscope. The photoelectrochemical performances of photocatalyst thin films with rGO (reduced graphene oxide) and without rGO were analyzed systematically.

Synthesis of Graphene Using Polystyrene and the Effect of Boron Oxide on the Synthesis of Graphene (폴리스타이렌을 이용한 그래핀 합성 및 산화 붕소가 그래핀 합성에 미치는 영향)

  • Choi, Jinseok;An, Sung Jin
    • Korean Journal of Materials Research
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    • v.28 no.5
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    • pp.279-285
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    • 2018
  • Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

Kinetic Studies on the Mechanism of Hydrolysis of Styryldiphenylphosphine Oxide (Styryldiphenylphosphine Oxide의 가수분해 반응 메카니즘에 관한 반응속도론적 연구)

  • Kim, Tae Rin;Shin, Gap Cheol;Pyun, Sang Yong;Lee, Seok Hee
    • Journal of the Korean Chemical Society
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    • v.44 no.5
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    • pp.429-434
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    • 2000
  • The rate constants for the hydrolysis of styryldiphossphine oxide(SDPO) were deter-mined by ultraviolet visible spectrophotometric method and rate equation which can be applied over wide pH ranges was obtained. On the basis of pH-rate profile, hydrolysis product analysis, general base catalysis and substituent effect, a plausible hydrolysis mechanism is proposed : Below pH 4.5, the hydrolysis reaction is pro-ceeded by the attack of water to carbocation after protonaticentration of hydroxide ion.

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Characteristics of HfO2 Thin Films Using Wet Etching (습식식각을 이용한 HfO2 박막의 식각특성)

  • Yang, Jeung-Ryoul;Kwak, Noh-Seok;Lim, Jung-Hun;Choi, Yong-Jae;Hwang, Taek-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.687-692
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    • 2011
  • Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

Direct Methanol Synthesis by Partial Oxidation of Methane over Four-component Mixed Oxide Catalysts (4성분계 복합 산화물 촉매 이용 메탄의 부분산화에 의한 메탄올 직접 합성)

  • Kim, Young-Kook;Lee, Kwang-Hyeok;Hahm, Hyun-Sik
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.3
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    • pp.446-452
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    • 2014
  • Methanol was directly produced by the partial oxidation of methane with four-component mixed oxide catalysts. Four-component(Mo-Bi-Cr-Si) mixed oxide catalysts were prepared by the co-precipitation and sol-gel methods. The catalyst prepared by the sol-gel method showed about eleven times higher surface area than that prepared by the co-precipitation method. From the $O_2$-TPD experiment of the prepared catalysts, it was proven that there exists two types of oxygen species, and the oxygen species that participates in the partial oxidation reaction is the lattice oxygen desorbing around $750^{\circ}C$. The optimum reaction condition for methanol production was $420^{\circ}C$, 50 bar, flow rate of 115 mL/min, and $CH_4/O_2$ ratio of 10/1.5, providing methane conversion and methanol selectivity of 3.2 and 26.7%, respectively.

Effect of Hydrogen in Rapid Thermal Annealing on the Graphene-Zinc Oxide Electrode for Supercapacitor (슈퍼커패시터용 그래핀-산화아연 전극의 급속열처리에서 수소의 영향)

  • Jeong, Woo-Jun;Oh, Ye-Chan;Kim, Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.52 no.3
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    • pp.123-129
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    • 2019
  • With recent demand for the renewable energy resources, we conducted a research on the energy conversion and storage device of supercapacitor. The hybrid graphene-zinc oxide(GZO) electrodes for the supercapacitors (SCs) were fabricated and investigated. To increase the electrical conductivity of the GZO electrode, the rapid thermal annealing(RTA) in $Ar/H_2$(10%) atmosphere was applied and the effect was examined by comparing it with RTA at Ar atmosphere. In Raman spectroscopy, the electrodes annealed at 400? in $Ar/H_2$ atmosphere showed a lower ratio of D/G peak than that of annealed at Ar atmosphere, and had a larger specific capacitance(Sc) in the cyclic voltammetry(CV), and a lower the equivalent series resistance(ESR) in the electrochemical impedance spectroscopy(EIS). The reason seems to come from the better mixing of the graphene and zinc oxide by the RTA in $Ar/H_2$(10%).