• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.13-19
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• 2014

Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

• 산업기술연구
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• 제20권B호
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• pp.77-86
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• 2000

In order to observe the pattern forming of copper plate and chemical corrosion reaction, a study on the effect of the process parameters on the formation of micro-pattern by a photochemical etching of copper plate was carried out. The results are as follows : 1) Etching rate increases as the concentration of etchant increases under the regular condition of the temperature by the increasing of diffusion rate to surface. 2) Etching rate increases as the temperature of etchant increases by the fast acting of the material delivery of diffusion to surface under the regular condition of concentration. 3) It was found that etching speed increases as the material delivery of convection rising increased when the aeration speed of etchant increases. This result was from the fact acted by the material delivery of convection rising rather than material delivery of diffusion to the surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.98-100
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2$/Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Bulletin of the Korean Chemical Society
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• 제11권1호
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• pp.1-7
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• 1990

We present a theoretical investigation on the etching of an Al solid by $SiCl_4$ molecules at a collision energy of 600 eV. The classical trajectory method is employed to calculate Al etching yields, degree of anisotropy, kinetic energy distribution and angular distribution. The calculated results are compared with the reaction of a Cu solid by $SiCl_4$. The major products of the reaction are aluminum monomers and dimers together with considerable quantities of multimers. The Al solid shows better etching yield and better anisotropy than the Cu solid. This is consistent with the problem in the CMOS micro-fabrication of the CuAl and CuAlSi alloys. The relevance of these calculations for the dry etching of CuAl alloy is discussed.

• 공업화학
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• 제20권5호
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• pp.557-560
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• 2009

본 연구에서는 글라스를 $100{\mu}m$ 이하의 두께로 박판화하기 위한 새로운 습식 에칭방법 및 에칭 용액을 검토하였다. $NH_4F$ 또는 $NH_4HF_2$를 주성분으로 황산 또는 질산을 첨가한 경우 에칭 용액의 불산 함유량을 저감하는 데에 효과가 있었다. 혼산 용액의 조성과 온도의 영향을 검토하였으며, 음이온계 계면활성제의 첨가는 에칭반응에 의해 생성되는 슬러지의 부착을 억제해주는 효과가 있었다. 수류 발생부를 가지는 새로운 파일럿 장비를 사용하여 상용 무알칼리 글라스와 소다라임 글라스의 에칭 실험을 실시하였다. $640{\mu}m$ 두께의 무알칼리 글라스를 $45{\mu}m$ 두께로 $500{\mu}m$ 두께의 소다라임 글라스를 $100{\mu}m$ 두께로 박판화하였으며, 에칭 후의 표면 조도는 $0.01{\sim}0.02{\mu}m$를 유지하였다.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.35-39
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• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• 공업화학
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• 제24권1호
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• pp.67-71
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• 2013

철, 구리, 알루미늄 등과 같은 금속의 에칭액으로 사용되는 $FeCl_3$ 용액의 에칭능력은 에칭 과정에서 $Fe^{3+}$이 $Fe^{2+}$로 환원되면서 감소하게 된다. 에칭능력의 감소는 에칭 속도에 영향을 주기 때문에 시간당 제거되는 금속의 양이 감소하여 에칭 효율이 저하되며, 폐 $FeCl_3$ 용액은 환경에 유해하며, 처리시 경제적인 문제점을 지니고 있다. 본 연구에서는 폐 $FeCl_3$ 에칭액에 HCl 첨가 후 $O_2$, $H_2O_2$ 등과 같은 강한 산화제를 이용한 에칭액 재생 방법과 재생된 에칭액을 이용한 금속 에칭시 산화-환원 전위(ORP) 및 에칭능력과의 관계를 조사하였다. 연구 결과 폐 $FeCl_3$ 에칭액 대비 2 vol%의 HCl과 미량의 $H_2O_2$를 이용하여 재생된 $FeCl_3$의 에칭 능력이 향상되었으며, 재생액을 이용한 에칭시 에칭액내의 $Fe^{2+}$, $Fe^{3+}$의 농도변화로 인하여 ORP를 기준으로 하는 방법보다 에칭시간을 일정하게 하는 것이 보다 효율적인 방법으로 제시되었다.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.111-115
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• 2011

Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.