• Title/Summary/Keyword: charging-discharging

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Discharging/Charging Voltage-Temperature Pattern Recognition for Improved SOC/Capacity Estimation and SOH Prediction at Various Temperatures

  • Kim, Jong-Hoon;Lee, Seong-Jun;Cho, Bo-Hyung
    • Journal of Power Electronics
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    • v.12 no.1
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    • pp.1-9
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    • 2012
  • This study investigates an application of the Hamming network-dual extended Kalman filter (DEKF) based on pattern recognition for high accuracy state-of-charge (SOC)/capacity estimation and state-of-health (SOH) prediction at various temperatures. The averaged nine discharging/charging voltage-temperature (DCVT) patterns for ten fresh Li-Ion cells at experimental temperatures are measured as representative patterns, together with cell model parameters. Through statistical analysis, the Hamming network is applied to identify the representative pattern that matches most closely with the pattern of an arbitrary cell measured at any temperature. Based on temperature-checking process, model parameters for a representative DCVT pattern can then be applied to estimate SOC/capacity and to predict SOH of an arbitrary cell using the DEKF. This avoids the need for repeated parameter measuremet.

A Performance Study of Portable Hydrogen Storage Tank (휴대용 수소 저장체 성능 특성 연구)

  • Park, Joon-Ho;Hwang, Yong-Sheen;Jee, Sang-Hoon;Kim, Sung-Han;Cha, Suk-Won
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.315-318
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    • 2009
  • Hydrogen is the ideal candidate as an alternative energy carrier, so many hydrogen storage methods are investigated. The hydrogen storage method using metal hydride is good candidate as energy sources for portable devices because hydrogen-storage as metal hydride shows large volumetric storage density. In this study, we investigated the variations of hydrogen charging/discharging performance of metal hydride tanks at different temperature conditions. We charged metal hydride tanks with hydrogen in low temperature because of the exothermic reactions of hydrogen absorption while we discharged in high temperature to provide sufficient heat because of the endothermic reactions of desorption. In addition, we investigated the difference of hydrogen charging/discharging performance between two tanks having different sizes.

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Analysis and Implementation of a DC-DC Converter for Hybrid Power Supplies Systems

  • Yang, Lung-Sheng;Lin, Chia-Ching
    • Journal of Power Electronics
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    • v.15 no.6
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    • pp.1438-1445
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    • 2015
  • A new DC-DC power converter is researched for renewable energy and battery hybrid power supplies systems in this paper. At the charging mode, a renewable energy source provides energy to charge a battery via the proposed converter. The operating principle of the proposed converter is the same as the conventional DC-DC buck converter. At the discharging mode, the battery releases its energy to the DC bus via the proposed converter. The proposed converter is a non-isolated high step-up DC-DC converter. The coupled-inductor technique is used to achieve a high step-up voltage gain by adjusting the turns ratio. Moreover, the leakage-inductor energies of the primary and secondary windings can be recycled. Thus, the conversion efficiency can be improved. Therefore, only one power converter is utilized at the charging or discharging modes. Finally, a prototype circuit is implemented to verify the performance of the proposed converter.

Design of Charging and Discharging Switch Structure for Rechargeable Battery Protection IC (2차 전지 보호회로를 위한 충.방전 스위치 구조의 설계)

  • 김상민;조상준;채정석;김상호;박영진;손영철;김동명;김대정
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.85-88
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    • 2001
  • This paper suggests an improved switch architecture for the rechargeable battery protection IC. In the existing protection IC, charging and discharging switches composed of the CMOS transistor and the diode are external components. It is difficult to integrate the switches in a CMOS process due to the large chip-size overhead and inevitable parasitic effects. In this paper, we propose a new switch architecture of the MOSFET's 'diode connection' method. The performance and chip-size overhead are proved to be adequate for the fully integrated protection IC.

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The Electron Injection-induced Slow Current Transients in Metal-Oxide-Semiconductor Capacitors (금속-산화막-반도체(MOS) 소자에서의 전자주입에 따른 느린 준위의 전류 응답 특성 연구)

  • 최성우;전현구;안병철;노관종;노용한
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.216-219
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    • 1999
  • A simple two-terminal cyclic current-voltage(I-V) technique is used to measure the current-transients in MOS capacitors. Distinct charging/discharging currents were measured and analyzed as a function of (1) the hold time. (2) the gate polarity during the FNT electron injection, (3) the injection fluence and (4) the annealing time after the injection had stopped. Discharging and charging current-transients were strongly dependent upon the conditions for forming the inversion layer and the density of interface traps caused during the FNT electron injection, respectively. Several tentative mechanisms were suggested in the current work.

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SILC of Silicon Oxides

  • Kang, C.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.428-431
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    • 2003
  • In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

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Enhanced Charge Transfer Through Polypyrrole Electropolymerized on Poly(acrylonitrile-co-butadiene)/Pt Electrodes

  • Chae, Won-Seok;Moon, Jung-Nim;Kim, Kang-Jin
    • Analytical Science and Technology
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    • v.8 no.4
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    • pp.603-610
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    • 1995
  • The charge transfer rate in polypyrrole(PPy) electropolymerized within poly(acrylonitrile-co-butadiene)(PAB) was compared with that in PPy deposited Pt electrodes by using cyclic voltammetry, chronoamperometry, and chronopotentiometry in acetonitrile. For both electrodes anodic and cathodic peak currents were proportional to scan rates below 100 mV/sec, but to square root of scan rates beyond 200 mV/sec. The apparent diffusion coefficient of $ClO{_4}^-$ in the PPy/PAB composite is estimated to be 1.6 times larger than that in PPy. The PPy films composited within PAB layer showed higher anodic and cathodic currents and possessed faster charging-discharging process and larger capacity.

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A Study on the Low Level Leakage Currents of Silicon Oxides (실리콘 산화막의 저레벨 누설전류에 관한 연구)

  • 강창수;김동진
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.35T no.1
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    • pp.29-32
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    • 1998
  • The low level leakage currents in silicon oxides were investigated. The low level leakage currents were composed of a transient component and a do component. The transient component was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The do component was caused by trap assisted tunneling completely through the oxide. The low level leakage current was proportional to the number of traps generated in the oxides. The low level leakage current may be a trap charging and discharging current. The low level leakage current will affect data retention in EEPROM.

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A Series Operation Algorithm For Voltage Balancing Between Modules Of Modular Battery Pack Charging/Discharging System (모듈러 배터리팩 충·방전기의 모듈 간 전압 밸런싱을 위한 직렬 운전 알고리즘)

  • Lee, Yoon-Seong;Kang, Kyung-Min;Choi, Bong-Yeon;Kim, Mi Na;Lee, Hoon;Won, Chung-Yuen
    • Proceedings of the KIPE Conference
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    • 2019.11a
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    • pp.140-141
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    • 2019
  • This paper proposes a series operation algorithm for voltage balancing of modular battery pack charging/discharging system using 3P-CFDAB (3-Phase Current-Fed Dual Active Bridge) converter. By using the proposed algorithm, we can prevent deterioration or loss of a particular module. The algorithm in this paper was verified through PSIM simulation.

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Experimental Characteristics Examination of a Hybrid-Type Supercapacitor (하이브리드형 슈퍼커패시터의 실험적 특성 규명)

  • Jeong, Kyuwon;Shin, Jaeyoul
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.25 no.4
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    • pp.307-311
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    • 2016
  • Several types of supercapacitors have been developed for energy storage systems. Among them, the hybrid type has advantages such as a large capacitance per weight compared with the electric double-layer capacitator type. In this study, constant current charging and discharging tests were conducted for recently developed hybrid-type supercapacitors. Based on the experimental results, the capacitance and equivalent series resistance were obtained. The capacitance was larger than the designed capacitance at a low current but became small at a high current. In addition, the capacitance depended on the cell voltage. These results can be used to design an energy storage system.